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SUD50P08 Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SUD50P08-25L-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 80V 50A DPAK	Original	PDF		7
SUD50P08-26-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 80V 50A TO252	Original	PDF		7

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Vishay Intertechnologies SUD50P08-25L-E3 MOSFETs 80V 50A 136W 25.2mohm @ 10V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics ()	SUD50P08-25L-E3		78,627			1 $3.48 10 $2.20 100 $1.64 1000 $1.32 10000 $1.25	Buy Now
	SUD50P08-25L-E3		77,815			1 $3.61 10 $2.36 100 $1.64 1000 $1.32 10000 $1.25	Buy Now
Verical ()	SUD50P08-25L-E3		6,000		2,000	1 - 10 - 100 - 1000 - 10000 $1.09	Buy Now
	SUD50P08-25L-E3		2,000		2,000	1 - 10 - 100 - 1000 - 10000 $1.09	Buy Now
	SUD50P08-25L-E3		1,250		27	1 - 10 - 100 $1.83 1000 $1.81 10000 $1.81	Buy Now
Arrow Electronics ()	SUD50P08-25L-E3		6,000	40 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $1.09	Buy Now
	SUD50P08-25L-E3		2,000	40 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $1.09	Buy Now
TTI ()	SUD50P08-25L-E3	Reel	18,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.98	Buy Now
	SUD50P08-25L-E3	Cut Tape	1,600		10	1 - 10 $1.77 100 $1.77 1000 $1.77 10000 $1.77	Buy Now
Quest Components	SUD50P08-25L-E3		4			1 $4.95 10 $4.13 100 $4.13 1000 $4.13 10000 $4.13	Buy Now
Vishay Siliconix SUD50P08-25L-E3 POWER FIELD-EFFECT TRANSISTOR, 12.5A I(D), 80V, 0.0252OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SUD50P08-25L-E3		8			1 $2.02 10 $1.86 100 $1.86 1000 $1.86 10000 $1.86	Buy Now

SUD50P08 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
9952 Abstract: 2429 AN609 Contextual Info: SUD50P08-25L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	SUD50P08-25L AN609 12-Oct-07 9952 2429	PDF
Contextual Info: SPICE Device Model SUD50P08-25L www.vishay.com Vishay Siliconix P-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SUD50P08-25L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
ic MARKING QG Abstract: 37W40 Contextual Info: SUD50P08-26 New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –80 0.026 @ VGS = –10 V (A)a –50 Qg (Typ) APPLICATIONS RoHS D Automotive such as: – High Side Switch	Original	SUD50P08-26 O-252 SUD50P08-26--E3 51512--Rev. 05-Sep-05 ic MARKING QG 37W40	PDF
Contextual Info: SPICE Device Model SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50P08-26 18-Jul-08	PDF
Contextual Info: SUD50P08-26 New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –80 0.026 @ VGS = –10 V (A)a –50 Qg (Typ) APPLICATIONS RoHS D Automotive such as: – High Side Switch	Original	SUD50P08-26 O-252 SUD50P08-26--E3 08-Apr-05	PDF
id-12 Abstract: SUD50P08 05SEP0 Contextual Info: SPICE Device Model SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50P08-25L S-51618Rev. 05-Sep-05 id-12 SUD50P08 05SEP0	PDF
S-71660-Rev Abstract: sud50p0825le3 Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252	Original	SUD50P08-25L O-252 SUD50P08-25L-E3 08-Apr-05 S-71660-Rev sud50p0825le3	PDF
S7166 Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252	Original	SUD50P08-25L O-252 SUD50P08-25L-E3 18-Jul-08 S7166	PDF
Contextual Info: New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 80 0.026 at VGS = - 10 V - 50 102 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-252 S G Drain Connected to Tab	Original	SUD50P08-26 O-252 SUD50P08-26-E3 18-Jul-08	PDF
SUD50P08-25L Abstract: sud50p0825le3 Contextual Info: SUD50P08-25L New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0252 @ VGS = –10 V –50 0.029 @ VGS = –4.5 V –47 VDS (V) –80 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:	Original	SUD50P08-25L O-252 SUD50P08-25L--E3 51513--Rev. 22-Aug-05 SUD50P08-25L sud50p0825le3	PDF
Contextual Info: SPICE Device Model SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUD50P08-25L 18-Jul-08	PDF
Contextual Info: New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0252 at VGS = - 10 V - 50 0.029 at VGS = - 4.5 V - 47 VDS (V) - 80 Qg (Typ) • TrenchFET Power MOSFET RoHS COMPLIANT 55 nC TO-252	Original	SUD50P08-25L O-252 SUD50P08-25L-E3 18-Jul-08	PDF
06AUG07 Contextual Info: New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a Qg (Typ) - 80 0.026 at VGS = - 10 V - 50 102 nC • TrenchFET Power MOSFET RoHS COMPLIANT TO-252 S G Drain Connected to Tab	Original	SUD50P08-26 O-252 SUD50P08-26-E3 08-Apr-05 06AUG07	PDF
Contextual Info: SUD50P08-25L New Product Vishay Siliconix P-Channel 80-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.0252 @ VGS = –10 V –50 0.029 @ VGS = –4.5 V –47 VDS (V) –80 D TrenchFETr Power MOSFET Qg (Typ) APPLICATIONS RoHS D Automotive such as:	Original	SUD50P08-25L O-252 SUD50P08-25L--E3 08-Apr-05	PDF

si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF