SI4825 Search Results

2sc9018

Contextual Info: AN738 Si4825/36-A A NTENNA , S CHEMATIC , L AYOUT AND D E S I G N G UIDEL INES 1. Introduction This document provides general Si4825/36-A design and AM/FM/SW antenna selection guidelines, including schematic, BOM and PCB layout. All users should follow the Si4825/36-A design guidelines presented in Section 2

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4825DY

Abstract: V366
Contextual Info: SPICE Device Model Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4825DY

Abstract: Si4825DY-T1-E3
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: SPICE Device Model Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

SI4825DDY-T1-GE3

Contextual Info: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET

Si4825DY

Abstract: Si4825DY-T1-E3
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4825DY

Abstract: Si4825DY-T1 Si4825DY-T1-E3
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S

74112

Abstract: AN609 Si4825DY
Contextual Info: Si4825DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

5458

Abstract: M 3101 74209 AN609
Contextual Info: Si4825DDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −11.5 0.022 @ VGS = −4.5 V −9.2 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View Ordering Information: Si4825DY Si4825DY-T1 (with Tape and Reel)

Si4825DY

Abstract: Si4825DY-T1-E3
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: Si4825-DEMO Si4825 D EMO B OARD U SER ’ S G UIDE 1. Features ATAD analog tune and analog display AM/FM/SW radio Worldwide FM band support 64–109 MHz with 18 bands, see the Table 1 Worldwide AM band support 504–1750 kHz with 5 bands, see the Table 1

SI4825DDY-T1-GE3

Abstract: SI4825DDY Si4825DY Si4825DY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4825DDY vs. Si4825DY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4825DDY-T1-E3 replaces Si4825DY-T1-E3 Si4825DDY-T1-GE3 replaces Si4825DY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Contextual Info: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 rDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • TrenchFET Power MOSFETs • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT S

Contextual Info: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Contextual Info: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET

Si4825DY

Abstract: Si4825DY-T1
Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.014 @ VGS = −10 V −11.5 0.022 @ VGS = −4.5 V −9.2 SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View Ordering Information: Si4825DY Si4825DY-T1 (with Tape and Reel)

Contextual Info: Si4825DY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.014 at VGS = - 10 V - 11.5 0.022 at VGS = - 4.5 V - 9.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

Si4825DDY-T1-GE3

Abstract: SI4825DDY-T1-GE3 MARKING 68926
Contextual Info: New Product Si4825DDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0125 at VGS = - 10 V - 14.9 0.0205 at VGS = - 4.5 V - 11.6 VDS (V) - 30 • • • • Qg (Typ.) 29.5 nC Halogen-free TrenchFET Power MOSFET

TG-UTB01526

Abstract: SL4X30MW100T DIODE S4 61A 2sc9018 z5u transistor SL8X50MW70T SL5X7X100MW70T TG-UTB01527S UMEC TG-UTB01526
Contextual Info: AN738 Si4825/36-A 天 线 原 理 图 、 布 局 和 设 计 指 南 1。 引言 本文档提供了常规 Si4825/36-A 设计和 AM/FM/SW 天线选型指南，包括原理图、BOM 和 PCB 布局。所有用户均应 遵守第 2 和 3 节中的 Si4825/36-A 设计指南，并根据第 4 到 8 节的内容在具体的应用情况和所用设备的基础上选择

Si4825DY

Contextual Info: SPICE Device Model Si4825DY P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse