SI9933 Search Results

9933A

Abstract: Si9933ADY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z marking code ng Fairchild
Contextual Info: Si9933ADY Dual P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

Si9933CDY-T1-E3

Abstract: Si9933CDY Si9933CDY-T1-GE3
Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

Si9933ADY-T1

Abstract: Si9933ADY DIODE TA 70/40 Si9933ADY-T1-E3 SI9933BDY-T1-E3 Si9933BDY
Contextual Info: Specification Comparison Vishay Siliconix Si9933BDY vs. Si9933ADY Description: Dual P-Channel, 20 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si9933BDY-T1-E3 Replaces Si9933ADY-T1-E3 Si9933BDY-T1 Replaces Si9933ADY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Si9933ADY

Contextual Info: Si9933ADY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

Si9934DY

Abstract: Si6943DQ Si9933ADY
Contextual Info: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1

Si9933DY

Contextual Info: Si9933DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.11 @ VGS = -4.5 V "3.4 0.15 @ VGS = -3.0 V "2.9 0.19 @ VGS = -2.7 V "2.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 PĆChannel MOSFET

Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

Si9933BDY

Abstract: S402
Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

Si6943DQ

Abstract: Si9933ADY Si9934DY
Contextual Info: Si9933ADY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1

Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

AN609

Abstract: M 7401
Contextual Info: Si9933CDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,

Contextual Info: Si9933ADY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.075 @ VGS = –4.5 V "3.4 0.105 @ VGS = –3.0 V "2.9 0.115 @ VGS = –2.7 V "2.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

Si9933BDY

Contextual Info: SPICE Device Model Si9933BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9933CDY

Abstract: SI9933C SI9933cDY-T1
Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

Si9934DY

Abstract: P-channel power mosfet SO-8 Si6943DQ Si9933DY S-47590
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ

9933A

Abstract: Si9933ADY
Contextual Info: Si9933ADY Dual P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage

Si9933CDY-T1-E3

Abstract: Si9933CDY-T1-GE3
Contextual Info: New Product Si9933CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES • Halogen-free Option Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.058 at VGS = - 4.5 V -4 0.094 at VGS = - 2.5 V

Si9933BDY

Abstract: Si9933BDY-T1-E3 si9933b
Contextual Info: Si9933BDY Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.06 at VGS = - 4.5 V - 4.7 0.10 at VGS = - 2.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

MS-4075

Abstract: Si6943DQ Si9933DY Si9934DY
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6943DQ

72748

Abstract: Si9933BDY
Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

40237

Contextual Info: Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free)

Si6943DQ

Abstract: Si9933DY Si9934DY MS-4075
Contextual Info: Si9933DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.11 @ VGS = –4.5 V "3.4 0.15 @ VGS = –3.0 V "2.9 0.19 @ VGS = –2.7 V "2.6 Recommended upgrade: Si9934DY Lower profile/smaller size see: Si6943DQ S1 S2 SO-8