SI4465D Search Results

Si4465DY

Abstract: Si4465DY SPICE Device Model
Contextual Info: SPICE Device Model Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

74100

Abstract: 74100 datasheet AN609 Si4465DY
Contextual Info: Si4465DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

74278

Abstract: Si4465DY Si4465ADY Si4465DY-T1 SI4465ADY-T1-E3
Contextual Info: Specification Comparison Vishay Siliconix Si4465ADY vs. Si4465DY Description: Package: Pin Out: P-Channel, 1.8 V G-S MOSFET SO-8 Identical Part Number Replacements Si4465ADY-T1-E3 Replaces Si4465DY-T1-E3 Si4465ADY-T1-E3 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4465DY

Abstract: Si4465DY-T1
Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.009 @ VGS = - 4.5 V - 14 0.011 @ VGS = - 2.5 V - 12 0.016 @ VGS = - 1.8 V - 10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D Ordering Information: Si4465DY

Si4465DY

Abstract: Si4465DY-T1
Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V –14 0.011 @ VGS = –2.5 V –12 0.016 @ VGS = –1.8 V –10 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si4465DY-T1

74239

Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Si4465DY

Contextual Info: Si4465DY Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.009 @ VGS = –4.5 V "14 0.011 @ VGS = –2.5 V "12 0.016 @ VGS = –1.8 V "10 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

Contextual Info: SÌ4465PY Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product v 0# m -8 r d s (ON) fQJ 0.009 9 Vqs = -4 -5 V ±1 4 0.011 9 Vqs = —2.5 V ±12 0.016 9 VGS = -1 .8 V ±1 0 9 ° \* A til SO-8 "It rm P-Channel MOSFET A B S O L U T E M A X I M U M R A T IN G S | T a

DIODE 22B4

Abstract: BA4602 ba41-00316a AR5212 MAP17-232 Q506 nvidia 7100 AR5211 27b1 diode geforce4
Contextual Info: X10 DRAW Model Name PBA Name PCB Code Dev. Step Revision APPROVAL AQUILA MAIN BA92-01774A BA41-#####A SR 1.0 CHECK : : : : : CPU :P4-BANIAS Chip Set :MCH-M ODEM Remarks :TEMP AQUILA 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams

LEXAN 121r - 21051

Abstract: lexan 121r 21051 u574 Dell 90w-AC adapter B568 B552 ffc B591 12505hs14 BA42-00141A BA41-00497A
Contextual Info: 10. Electrical Partlist Option SEC Code Location Name Spec. Unit , PC -,-,0to+95C,560mA,-, HYS64T64020HDL,PC , DT,KR,CP3,IEC320 C5,250/250V,7/3A,BLK,1830mm,-,H05VV-F

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

smd code wKX

Abstract: samsung nc110 samsung nc108 AR5112 TP2322 ELM7S08WS TP2320 smd zG sot 23 TP2323 GND194
Contextual Info: [ Z zhtz|unGwyvwypl{hy€ Y X {opzGkvj|tlu{Gjvu{hpuzGjvumpklu{phs wyvwypl{hy€Gpumvyth{pvuG{oh{Gpz zhtz|unGlslj{yvupjzGjvNzGwyvwly{€U kvGuv{GkpzjsvzlG{vGvyGk|wspjh{lGmvyGv{olyz ljlw{GhzGh|{ovyplkGi€Gzhtz|unU k k jpjospk j i jw|GGGGGGaG ihuphzVkv{ohu j—GzŒ›GaG tjoTtGvkltR

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

30b1 diode

Abstract: ntc 10d-7 DIODE G7.9 27B2 diode 45x1 diode M30 c300 811324 q515 11F4 smd diode f4 4d
Contextual Info: This Document can not be used without Samsung’s authorization. 5 Schematic Diagrams and PCB Silkscreen 5-1 MAIN BOARD 5-1-1 Schematic Diagrams M30 5-1 5 Schematic Diagrams and PCB Silkscreen This Document can not be used without Samsung’s authorization.

CDBM c28

Abstract: U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Foster/ Prestonia CPU Foster/ Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4)

SUS304-CSP

Abstract: lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP
Contextual Info: This Document can not be used without Samsung’s authorization. 4 Explorded View and Mechanical Parts List 4-1 X-50 15.4” LCD SENS X-50 (15.4” LCD Explorded View) 4-1 4 This Document can not be used without Samsung’s authorization. 4-2 X-50 15.4” LCD

LM317 SOT223

Abstract: SIC350S BA92-03528A BA81 BA41-00416A BA41-004 49fl004 119MIL smd L272 BA920
Contextual Info: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P29G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List

MMZ1608S121AT

Abstract: nc10 samsung 45-D2 Samsung ddr2 7SZ14 BA09-00009A INTEL945GMS SMD y8 samsung nc10 bios Socket AM2
Contextual Info: 4 3 1 2 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D RIMINI CPU : INTEL YONAH-ULV

ar7161

Abstract: schematic diagram inverter 2000w 216P9NZCGA12H AR7141 ar716 samsung dvd Schematic circuit diagram schematic diagram trace 2425 inverter 2000w r305 finger print module K4D26328 ASTM D710
Contextual Info: SENS P20 Owner : Kevin, Lee Signature : HS, Kim Robin, Cho APPROVAL TAURUS II MAIN BOARD BA41-00346A PBA:BA92-xxxxxx, SMT:BA92-xxxxxx MP 0130-1.1 Jan.30.2003 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood

M28N-2

Abstract: CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Prestonia CPU Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4) 533MHz(133MHz x 4)

LM317 SOT223

Abstract: w33 SMD sot 23 PC-GF10 49fl004 BA75-01620A SIC350S TM61PUH8G214 MP0402H BA59-01375A BA75-01732A
Contextual Info: This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List 5-1 Exploded View 5-1-1 system Exploded ALL SENS P27G 5-1 This Document can not be used without Samsung’s authorization. 5 Exploded View and Mechanical Part List