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    SI4451DY Search Results

    SI4451DY Datasheets (4)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4451DY
    Vishay Siliconix P-Channel 12-V (D-S) MOSFET Original PDF 39.86KB 5
    Si4451DY SPICE Device Model
    Vishay P-Channel 12-V (D-S) MOSFET Original PDF 179.83KB 3
    SI4451DY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF 9
    SI4451DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC Original PDF 9
    SF Impression Pixel

    SI4451DY Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SI4451DY-T1-E3

    10000MA, 12V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components () SI4451DY-T1-E3 480
    • 1 $10.35
    • 10 $10.35
    • 100 $10.35
    • 1000 $5.17
    • 10000 $5.17
    Buy Now
    SI4451DY-T1-E3 287
    • 1 $2.41
    • 10 $2.41
    • 100 $0.90
    • 1000 $0.84
    • 10000 $0.84
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    Flip Electronics SI4451DY-T1-E3 5,000
    • 1 -
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    SI4451DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4451dy2002/95/ecsi4451dy-t1-e3si4451dy-t1-ge3+111-mar-11 PDF

    74222

    Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1
    Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    si4451dysi4467dysi4451dy-t1-e3si4467dy-t1-e3+4si4451dy-t1si4467dy-t131-oct-0674222 PDF

    Si4451DY

    Contextual Info: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4451dy18-jul-08 PDF

    Si4451DY

    Contextual Info: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch


    Original
    si4451dys-03160--rev17-feb-03 PDF

    Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original
    si4451dysi4451dy-t1si4451dy-t1-e308-apr-05 PDF

    Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original
    si4451dysi4451dy-t1si4451dy-t1-e318-jul-08 PDF

    Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4451dy2002/96/ecsi4451dy-t1-e3si4451dy-t1-ge3+118-jul-08 PDF

    Si4451DY

    Abstract: Si4451DY-T1 Si4451DY-T1-E3
    Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS


    Original
    si4451dysi4451dy-t1si4451dy-t1-e3s-61005-rev+112-jun-06 PDF

    Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4451dy2002/95/ecsi4451dy-t1-e3si4451dy-t1-ge3+22011/65/eu12-mar-12 PDF

    TR-59

    Abstract: Si4451DY
    Contextual Info: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4451dys-51095rev13-jun-05tr-59 PDF

    Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4451dy2002/95/ecsi4451dy-t1-e3si4451dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    74239

    Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1
    Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original
    si4451dysi4465dysi4451dy-t1-e3si4465dy-t1-e3+4si4451dy-t1si4465dy-t131-oct-0674239 PDF

    4093 N

    Abstract: 4093 DATASHEET 7313 AN609 Si4451DY 442.017
    Contextual Info: Si4451DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4451dyan60916-mar-074093 n+34093 datasheet7313442.017 PDF

    Si4451DY-T1-E3

    Abstract: Si4451DY
    Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4451dy2002/95/ecsi4451dy-t1-e3si4451dy-t1-ge3+118-jul-08 PDF

    Contextual Info: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch


    Original
    si4451dy08-apr-05 PDF