SI4451DY Search Results

SI4451DY Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4451DY		Vishay Siliconix	P-Channel 12-V (D-S) MOSFET	Original	PDF	39.86KB	5
Si4451DY SPICE Device Model		Vishay	P-Channel 12-V (D-S) MOSFET	Original	PDF	179.83KB	3
SI4451DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC	Original	PDF		9
SI4451DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 10A 8-SOIC	Original	PDF		9

SI4451DY Price and Stock

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Vishay Siliconix SI4451DY-T1-E3 MOSFET P-CH 12V 10A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4451DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.15	Buy Now
Vishay Siliconix SI4451DY-T1-GE3 MOSFET P-CH 12V 10A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4451DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.15	Buy Now
Vishay Intertechnologies SI4451DY-T1-E3 Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4451DY-T1-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4451DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $1.31	Buy Now
Newark	SI4451DY-T1-E3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components ()	SI4451DY-T1-E3		767			1 $2.41 10 $2.41 100 $2.41 1000 $0.75 10000 $0.75	Buy Now
	SI4451DY-T1-E3		480			1 $10.35 10 $10.35 100 $10.35 1000 $5.17 10000 $5.17	Buy Now
Vishay Intertechnologies SI4451DY-T1-GE3 Trans MOSFET P-CH 12V 10A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4451DY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI4451DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4451DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 11-Mar-11	PDF
74222 Abstract: Si4451DY Si4451DY-T1-E3 Si4451DY-T1 Si4467DY Si4467DY-T1 Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4467DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4467DY-T1-E3 Si4451DY-T1 Replaces Si4467DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4451DY Si4467DY Si4451DY-T1-E3 Si4467DY-T1-E3 Si4451DY-T1 Si4467DY-T1 31-Oct-06 74222	PDF
Si4451DY Contextual Info: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4451DY 18-Jul-08	PDF
Si4451DY Contextual Info: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch	Original	Si4451DY S-03160--Rev. 17-Feb-03	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 08-Apr-05	PDF
Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 18-Jul-08	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/96/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF
Si4451DY Abstract: Si4451DY-T1 Si4451DY-T1-E3 Contextual Info: Si4451DY Vishay Siliconix New Product P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • TrenchFET Power MOSFET Pb-free APPLICATIONS	Original	Si4451DY Si4451DY-T1 Si4451DY-T1-E3 S-61005-Rev. 12-Jun-06	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
TR-59 Abstract: Si4451DY Contextual Info: SPICE Device Model Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4451DY S-51095Rev. 13-Jun-05 TR-59	PDF
Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
74239 Abstract: Si4451DY Si4451DY-T1 Si4451DY-T1-E3 Si4465DY Si4465DY-T1 Contextual Info: Specification Comparison Vishay Siliconix Si4451DY vs. Si4465DY Description: Package: Pin Out: P-Channel, 12 V D-S MOSFET SO-8 Identical Part Number Replacements Si4451DY-T1-E3 Replaces Si4465DY-T1-E3 Si4451DY-T1 Replaces Si4465DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)	Original	Si4451DY Si4465DY Si4451DY-T1-E3 Si4465DY-T1-E3 Si4451DY-T1 Si4465DY-T1 31-Oct-06 74239	PDF
4093 N Abstract: 4093 DATASHEET 7313 AN609 Si4451DY 442.017 Contextual Info: Si4451DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4451DY AN609 16-Mar-07 4093 N 4093 DATASHEET 7313 442.017	PDF
Si4451DY-T1-E3 Abstract: Si4451DY Contextual Info: Si4451DY Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.00825 at VGS = - 4.5 V - 14 - 12 0.01025 at VGS = - 2.5 V - 13 0.013 at VGS = - 1.8 V - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	Si4451DY 2002/95/EC Si4451DY-T1-E3 Si4451DY-T1-GE3 18-Jul-08	PDF

Contextual Info: Si4451DY New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.00825 @ VGS = - 4.5 V - 14 0.01025 @ VGS = - 2.5 V - 13 0.013 @ VGS = - 1.8 V - 12 D TrenchFETr Power MOSFET APPLICATION D Load Switch	Original	Si4451DY 08-Apr-05	PDF