SI4965D Search Results

Contextual Info: Si4965DY VISH A Y Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL Drain-Source Voltage L IM IT

Si4965DY

Contextual Info: SPICE Device Model Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4965DY

Contextual Info: SPICE Device Model Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si4965DY

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.021 @ VGS = –4.5 V "8.0 0.027 @ VGS = –2.5 V "7.0 0.040 @ VGS = –1.8 V "5.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View

T0252AA

Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y

58AA

Abstract: Si4965DY
Contextual Info: SPICE Device Model Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 8.0 0.027 @ VGS = - 2.5 V - 7.0 0.040 @ VGS = - 1.8 V - 5.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.021 at VGS = - 4.5 V - 8.0 -8 0.027 at VGS = - 2.5 V - 7.0 0.040 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 8.0 0.027 @ VGS = - 2.5 V - 7.0 0.040 @ VGS = - 1.8 V - 5.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.021 at VGS = - 4.5 V - 8.0 -8 0.027 at VGS = - 2.5 V - 7.0 0.040 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition

Si4965DY

Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.021 at VGS = - 4.5 V - 8.0 -8 0.027 at VGS = - 2.5 V - 7.0 0.040 at VGS = - 1.8 V - 5.8 • Halogen-free According to IEC 61249-2-21 Definition

3771

Abstract: 8948 AN609 Si4965DY
Contextual Info: Si4965DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4965DY

Abstract: Si4965DY-T1
Contextual Info: Si4965DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 8.0 0.027 @ VGS = - 2.5 V - 7.0 0.040 @ VGS = - 1.8 V - 5.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2

230V ac to 5V dc usb charger circuit

Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or

230V ac to 5V dc usb charger circuit

Abstract: ETSI ts 102.221 ETSI ts 102.221 V4.2.0 2742B schematic diagram 110v dc charger 103JT-025 PXA255 56H05C AT73C203 2742B-PMGMT-03
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9V Dynamically Adjustable to 0.87V/1.1V/1.2V • DC to DC step Down 1.2 A, 1.2V (Dynamically Adjustable to 1.0V/1.1V/1.3V) or 1.75V (Dynamically Adjustable 1.65V/1.70V/1.80V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70V/1.75V/1.85V) or

103JT-025

Abstract: SeMitec Ishizuka Electronics uSIM sclk usim diode bat2c iso7816 sim PXA255 tR1200 ntc thermistors for inrush current limiting PXA255 ic diagram
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9 V Dynamically Adjustable to 0.87 V/1.1 V/1.2 V • DC to DC step Down 1.2 A, 1.2 V (Dynamically Adjustable to 1.0 V/1.1 V/1.3 V) or 1.75 V (Dynamically Adjustable 1.65 V/1.70 V/1.80 V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70 V/1.75 V/1.85 V) or

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

CDBM c28

Abstract: U93 QUANTA QUANTA U93 AIC-7899W BC-1072 BC1008 R6549 GEVENT12 24X4 C1152
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Foster/ Prestonia CPU Foster/ Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4)

M28N-2

Abstract: CDBM c28 U93 QUANTA QUANTA U93 BC1008 N25 3KV SEC U891 b30 c300 - 1 RN5101 C1254
Contextual Info: 4 B CLK Gem A C D E 100MHz-CPU/GCLE/ITP 33MHz-PCI Ref 48MHz-USB/SIO 4 Y2 14.318MHz X-BUS FLASH Prestonia CPU Prestonia CPU USB BMC CPU BUS SP SIO 414 PP BW: 200MB/s 200MHz 100MHz x 2 LPC BUS MEMORY I/F CSB5 Y5 RAGE XL Y3 3 FLPY 400MHz(100MHz x 4) 533MHz(133MHz x 4)

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

DNP13

Abstract: RN624 MTG6_1 GPIO14 10DCR JP15 MA12 MA13 MA15 USB2224
Contextual Info: 5 4 3 2 1 USB2224 SMSC Low-Cost USB2224 CRB USB2.0 Compliant Flash Media Controller with XD Picture Card Support D Design Details Board: Assy 6310 Assy. 6310 Chip: SMSC USB2224 Flash Media Controller Circuit Diagrams utilizing SMSC Products Are Included As A Means Of

SEMITEC 103JT-025

Abstract: 103JT-025 uSIM sclk 120v battery charger Schematic Diagram ufx5 debouncing timer usim card chips
Contextual Info: Features • DC to DC Step Down 1.2 A, 0.9 V Dynamically Adjustable to 0.87 V/1.1 V/1.2 V • DC to DC step Down 1.2 A, 1.2 V (Dynamically Adjustable to 1.0 V/1.1 V/1.3 V) or 1.75 V (Dynamically Adjustable 1.65 V/1.70 V/1.80 V) • DC to DC Step Down 1.2 A, 1.8V (Dynamically Adjustable to 1.70 V/1.75 V/1.85 V) or

10DCR

Abstract: MA10 MA11 MA12 MA13 MA15 USB97C210 A05 smd RN313
Contextual Info: 5 4 3 2 1 USB97C210 SMSC Low-Cost USB97C210 CRB USB2.0 Compliant Flash Media Controller D Design Details Board: Assy 6238 D Assy. 6238 Circuit Diagrams utilizing SMSC Products Are Included As A Means Of Illustrating Typical Semiconductor Applications: Consequently Complete