MA10 Search Results

tr 30 f 124

Abstract: MA10705 IR 2153
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10705 Silicon epitaxial planer type Unit : mm For high-frequency rectification 4.4±0.3 • Features Mini-Power type package (2-pin) 2 1 voltage) type : VF < 0.37V(at IF=1.0A) +0.1 0.25–0.05 ● Low VF (forward 1.4±0.2

PA101

Abstract: MA603 PA-101 MA604 ma401 corcom pa102 MA602 PA102 MA101 MA102
Contextual Info: CORCOM Product Guide Accessories Continued M Series - Power Entry Modules Part No. MA101 - Plug Only Part No. MA102 - Pins on Strips Part No. MA103 - Pins on Reel (7,000 pins) Part No. MA104 - Pins Only Part No. MA601 - fits M4S versions Part No. MA602 - fits M1S versions

Contextual Info: Multilayer Ceramic Capacitors - Conformal Coated Axial Leaded MA Series Part Number Construction MA10 I I Size1 fr* 25.0m in. Capacity3 WVDC5 Tolerance4 Packaging? n o' Lmax.— v Solder platin g CP w ire Type D max. MA10 .100 2.50 L max. \ d ± 0 . 0 5

MA10704

Abstract: MA2J704 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features

MA10700

Abstract: MA3J700
Contextual Info: Schottky Barrier Diodes SBD MA3J700 (MA10700) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time trr

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D798 (MA10798) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

Contextual Info: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3D799 (MA10799) Silicon epitaxial planar type (cathode common) Unit: mm For switching mode power supply 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 13.7±0.2

tr 30 f 124

Contextual Info: Schottky Barrier Diodes SBD MA2Q705 (MA10705) Silicon epitaxial planar type 2.5±0.3 2.15±0.3 2 1.2±0.4 Unit: mm For high frequency rectification 8° 4.4±0.3 • IF(AV) = 1.5 A rectification is possible • Low forward voltage: VF < 0.37 V (at IF = 1 A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2J704 (MA10704) Silicon epitaxial planar type Unit: mm 1.25±0.1 For super high speed switching 0.7±0.1 0.35±0.1 1 • Features 1.7±0.1 2 0.5±0.1 0.16+0.1 –0.06

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X100 (MA10100) Silicon epitaxial planar type Unit: mm For switching circuits 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • High breakdown voltage: VR = 200 V • Small terminal capacitance Ct

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For high frequency rectification 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible

panasonic ma diodes sc-59 Marking

Contextual Info: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary

CR4305

Contextual Info: SPECIFICATION MA104 GPS/Cellular Combo Hercules Penta-Band Cellular Antenna Part No. : MA104.C.AB.015 Product Name : MA104 GPS/Cellular Combination Hercules Screw-mount Permanent mount Feature : Low profile - Height 29 mm and Diameter 49mm Heavy duty screw mount

50Hz sine wave generator

Abstract: MA10701 MA10701 SCHOTTKY diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 ● type package (3-pin)

a5e 104

Abstract: a5e 104 104z MARKING CODE ZAA a5e 104z
Contextual Info: Axial Leads/Ceralam GENERAL DESCRIPTION L AVX MA Series Molded Axial Leaded MLC Temperature Coefficient: C0G NP0 , X7R, Z5U 50V, 100V and 200V Case Material: Molded Epoxy Lead Material: Solderable LD D Lead Length Min. HOW TO ORDER MA10 Molded Axial Size

Contextual Info: MA.105 on ground-plane MA.105.C Specification Part No. MA105.C.LB.001 Product Name MA105 GPS/GLONASS and Cellular 2in1 Combination Hercules Screw Mount Permanent Mount Feature Low profile - Height 29mm and Diameter 49mm Heavy duty Screw Mount UV and vandal resistant ABS housing

ma1000 series

Abstract: MA1000 MAZ1000 MAZ1020 MAZ1020-H MAZ1020-L MAZ1022 MAZ1022-H MAZ1022-L MAZ1024
Contextual Info: Zener Diodes MAZ1000 Series MA1000 Series Silicon planar type Unit : mm M Di ain sc te on na tin nc ue e/ d For stabilization of power supply • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Average forward current IF(AV) 250 mA Repetitive peak forward current

MA10702

Abstract: MA3J702
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J702 (MA10702) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1

MA10301

Contextual Info: MA111 Variable Capacitance Diodes MA10301 Silicon epitaxial planer type Unit : mm For VCO INDICATES CATHODE Small series resistance rD ● S-Mini package, enabling down-sizing of the equipment and auto- ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo

MA10100

Abstract: MA3X100
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3X100 (MA10100) Silicon epitaxial planar type Unit: mm For switching circuits 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 0.3+0.1 –0 3 1.25±0.1 2.1±0.1 • Features

MA10704

Abstract: MA2J704
Contextual Info: Schottky Barrier Diodes SBD MA2J704 (MA10704) Silicon epitaxial planar type Unit : mm For super-high speed switching circuit Reverse voltage (DC) 0.4 ± 0.1 Symbol Rating Unit VR 20 V VRRM 20 V IFM 300 mA Average forward current IF(AV) 200 mA Non-repetitive peak forward

MA1000 Series

Abstract: MA1000 MAZ1000 MAZ1020 MAZ1020-H MAZ1020-L MAZ1022 MAZ1022-H MAZ1022-L MAZ1024
Contextual Info: Zener Diodes MAZ1000 Series MA1000 Series Silicon planar type Unit : mm For stabilization of power supply • High reliability, achieved by the combination the planar type and the glass seal • Large power dissipation: PD = 500 mW (With a printed-circuit