MA401 Search Results

MA40135

Abstract: MA40133 ma40131
Contextual Info: Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features ● ● ● ● Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available Description

Contextual Info: MA40172 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5 Maximum Conversion Loss (dB)

Contextual Info: MA40193 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)12 Maximum Conversion Loss (dB)

Contextual Info: MA40105-276 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

A4029

Abstract: A4027
Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky Barrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • PLANAR CONSTRUCTION SURFACE ORIENTED DIODE ■ EXTREMELY STRONG BEAM CONSTRUCTION ■ HIGH PROCESS UNIFORMITY ■ LOW NOISE FIGURE (MIXER DIODES)

a4013

Abstract: A40133
Contextual Info: an A M P com pany Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features • • • • Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available

Contextual Info: MA4015D10000000 P-Ch 40 Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

Contextual Info: MA4014S10000000 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4014S is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA40155-276M Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MA40190-276M Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage BandX Test Freq10G Frequency Min. (Hz)8.2G Frequency Max. (Hz)12G V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)12

Contextual Info: MA40106-276 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

MA40297

Contextual Info: MA40270, MA40290, MA40130 Series Silicon Beam-Lead Schottky B arrier Diodes Low, Medium and High Barrier Mixer and Detector Diodes Features • ISOPLANAR CONSTRUCTION BEAM STRENGTH EXCEEDS 10 GRAMS ■ PLANAR CONSTRUCTION (SURFACE ORIENTED DIODE) ■ EXTREMELY STRONG BEAM

Contextual Info: MA4014S10000000 N-Ch 40V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D061009

MA40160

Abstract: mixer diode
Contextual Info: MA40160 SCHOTTKY MIXER DIODE DESCRIPTION: PACKAGE STYLE 19 The ASI MA40160 s a Silicon medium barrier Schottky Diode Designed for normal L.O. drive, Mixer Applications up to 26 GHz. FEATURES: • Ceramic Package MAXIMUM RATINGS IF 2.0 mA VR 3.0 V PDISS 75 mW @ TC = 25 °C

Contextual Info: MA4013S10000000 P-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4013S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA40155-276 Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MA40106-276M Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.5

Contextual Info: TXC CORPORATION 4F, No.16, Sec.2, ChungYang S. Rd. PeiTou, Taipei, Taiwan TEL : 886-2-28941202 , 886-2-2895-2201 FAX : 886-2-28941206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL Customer : Product Type : MOSFET TXC PN : MA4014D10000000 Version

Contextual Info: MA4013D10000000 P-Ch 40 Fast Switching MOSFETs General Description Product Summery The MA4013D is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter

Contextual Info: MA40105-276M Diodes General Purpose UHF/MW Mixer Diode Military/High-RelN V RRM (V) Rep.Pk.Rev. Voltage Band Test Freq9.4G Frequency Min. (Hz) Frequency Max. (Hz) V(FM) Max.(V) Forward Voltage Ct{Cj} Nom. (F) Junction Cap. NR Max. Noise Figure Max. (dB)6.0

Contextual Info: MfaCGm m an A M P com pany Silicon Beam Lead Schottky Barrier Diodes MA40130 Series Features Case Style 965 • Planar Construction Surface Oriented Diode • Strong B eam Construction • Low Noise Figure (M ixer D iodes) • Low, Medium and High Barrier D iodes Available

A40133

Contextual Info: Æ an A M P com pan y Silicon Beam Lead Schottky Barrier Diodes MA40130 Series V3.00 Features • • • • Case Style 965 Planar Construction Surface Oriented Diode Strong Beam Construction Low Noise Figure (Mixer Diodes) Low, Medium and High Barrier Diodes Available

Contextual Info: MA4013D10000000 P-Ch 40 Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage TXC CORPORATION , All Rights Reserved. 1 Rev A.01 D020210

ASI30285

Abstract: MA40192
Contextual Info: MA40192 SCHOTTKY BARRIER MIXER DIODE DESCRIPTION: The MA40192 is a Silicon Schottky Barrier Diode Designed for Starved LO Mixer Applications up to 10 GHz. PACKAGE STYLE 01 FEATURES: • Replacement for MA/COM MA40192 • Available as matched pairs and matched quads