MA11 Search Results

tr 30 f 124

Abstract: MA10705 IR 2153
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10705 Silicon epitaxial planer type Unit : mm For high-frequency rectification 4.4±0.3 • Features Mini-Power type package (2-pin) 2 1 voltage) type : VF < 0.37V(at IF=1.0A) +0.1 0.25–0.05 ● Low VF (forward 1.4±0.2

MA116

Abstract: MA2J116 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 • Features • Allowing high-density mounting

MA695

Contextual Info: MA111 Fast Recovery Diodes FRD MA695 Silicon planer type (cathode common) Unit : mm For high-frequency rectification ● Cathode common dual type ● High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 21.0±0.5 15.0±0.2

5.9v zener

Abstract: MA3068 C100 MAZK068D
Contextual Info: MA111 Zener Diodes Composite Elements MAZK068D Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 -0.3 +0.25 0.65±0.15 1.5 -0.05 0.65±0.15 3 2 +0.1 0.16 -0.06 0 to 0.1 0.8 1.1 -0.1 +0.2

Contextual Info: MA111 Zener Diodes Composite Elements MA3100WA Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit IF AV Instanious forward current IFRM Total power dissipation Ptot*2 Non-repetitive reverse surge power dissipation

Contextual Info: MA111 Schottky Barrier Diodes SBD MA760 Silicon epitaxial planer type (cathode common) Unit : mm ● Repetitive peak reverse voltage VRRM : 90V type 4.2±0.2 ø3.1±0.1 Cathode common dual type Symbol Parameter VRRM Average forward current IF(AV) Non-repetitive peak forward surge current

Contextual Info: MA111 Zener Diodes Composite Elements MA3200W Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 Average forward current Instanious forward current Total power dissipation IF AV

cd 4074

Contextual Info: MA111 Variable Capacitance Diodes MA337 Silicon epitaxial planer type For CATV tuner Unit : mm INDICATES CATHODE ● Capacity variation ratio largest at 14 CD(2V /CD(25V) ● Mini package, enabling down-sizing of the equipment and automatic 2 0.55±0.1 +0.2

MA6062

Contextual Info: MA111 Zener Diodes MA6000 Series Silicon planer type Unit : mm • Features ø1.4±0.1 LLD is shaped to be a small and lightweight cylinder without directionality, enabling high-density mounting Low operation resistance ● High reliability because of the same glass seal configuration as conventional DHD.

MA151K

Abstract: MA151WA 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

610C

Abstract: 610D S10A MA151WA
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # ffl tt m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

Contextual Info: MA111 Zener Diodes Composite Elements MA950 Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 +0.25 0.5 –0.05 +0.1 0.3 –0.05 +0.1 +0.2 2.9 –0.05 dissimilar zener diodes wired in parallel

Contextual Info: MA111 Schottky Barrier Diodes SBD MA769 Silicon epitaxial planer type (cathode common) Unit : mm Repetitive peak reverse voltage VRRM : 150V type ● Sealed in TO-220F full-pack package, with high reliability ● Cathode common dual type Low forward voltage V F

Contextual Info: MA111 Zener Diodes Composite Elements MA3075T Silicon planer type Unit : mm +0.2 2.8 –0.3 +0.25 0.65±0.15 +0.1 1.5 –0.05 0.4 –0.05 1.45 0.65±0.15 0.5R 1 0.5 0.95 0.95 2 3 +0.1 0.4 –0.05 +0.2 type package 4-pin anode-common wiring of MA3075 +0.1

OH017

Abstract: hall sensor Panasonic OH10017 marking VH
Contextual Info: MA111 GaAs Hall Elements OH10017 OH017 GaAs hall element ● Hall voltage : typ. 90mV(VC= 3V, B= 0.1T) ● Input resistance : typ. 2kΩ(min. 1.5kΩ) ● Output resistance : typ. 7kΩ ● Low current dissipation type ● Mini thin type (4-pin) package. Automatic insertion through taping

SN52723

Abstract: 79XX SN52555 lm723 cross motorola LM723 LM101 LM101A signetics LM555 lm723
Contextual Info: BIPOLAR M EM O RY DIVISION M AY 1982 MILITARY PRODUCTS LINEAR INDUSTRY CROSS REFERENCE LINEAR INDUSTRY CROSS REFERENCE FAIRCHILD SIGNETICS mA111 LM 111 pA 139 ¿¿A733 LM 139 M A733 L F 1 5 5 / 156 M A F 1 5 5 / 156 ¿¿A101 M A101A M C 1556 M A 1558 M A747

tb 495d

Abstract: 610C 610D S10A
Contextual Info: — ft & MA1U152K M.4il’152WA MA1U152WK MA1U157A MA2S111 MA4S159 MA57 MA72 MA73 MA75WA MA75WK MA77 MA8QWA MA80WK MA11Q M AI 11 MA112 MAI 13 MA115 M AI 16 « Vrrm fsm ft # tt ffl m s ft # t rr n s tt C t(p F ) ( *U U m ax (V) (mA) iF (m A ) T (° C ) (li

TA7302

Abstract: MA711 AF111 F111 MA211 MA2901 SH3015 ma710 TO-99
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-O A28 MAF111, /¿AF211, mAF311, m A111, mA211, mA311 L-O A30 MA139/A, mA239/A, mA339/A, mA775, mA2901, mA7302 L-O A 29 ^AF111, mAF211, mAF311, mA111, mA211, mA311 14 □ 1 nc OUT b | ng O U T a |~ " 13 □ GND 2

ma139

Abstract: mr-r
Contextual Info: FAIRCHILD LINEAR OPERATIONAL AMPLIFIERS Item Q C g Ss p < 1 mA111 Voltage Comparator Strobed Inputs, Single Supply, Low I b 01 0 04 07 200K 2 mA211 Voltage Comparator (Strobed Inputs, Single Supply, Low I b ) 01 0 04 07 200K 3 mA311 Voltage Comparator (Strobed

Contextual Info: MA111 Zener Diodes Composite Elements MA3130WA Silicon planer type Constant voltage, constant current, waveform cripper and surge absorption circuit 1.45 0.95 1.9±0.2 3 +0.1 0.4 –0.05 anode-common wiring of MA3130 1 0.95 +0.2 2.9 –0.05 ● Two 0.65±0.15

Contextual Info: MA111 Zener Diodes Composite Elements MA3200W Silicon planer type Unit : mm Constant voltage, constant current, waveform cripper and surge absorption circuit +0.2 2.8 –0.3 +0.1 2 3 100 mA Double IF AV 75 mA Single IFRM 200 mA Double IFRM 150 mA Single Ptot *1

marking PM

Contextual Info: MA111 Rectifier Diodes MA2QA01 Tentative Silicon diodes Unit : mm For power rectification 4.4±0.3 ● V R= 400V, IF=1.0A 1 +0.1 0.25–0.05 M Di ain sc te on na tin nc ue e/ d 2 1.2±0.4 1.2±0.4 +0.4 5.0–0.1 ea s ht e v tp is :// it pa fo na llo so win

ma649

Contextual Info: MA111 Fast Recovery Diodes FRD MA649 Silicon planer type (cathode common) Unit : mm High reverse voltage VR ● Low forward voltage V F ● Fast reverse recovery time trr 2.7±0.2 ø3.1±0.1 4.0 14.0±0.5 1.4±0.1 Solder Dip M Di ain sc te on na tin nc ue e/

50Hz sine wave generator

Abstract: MA10701 MA10701 SCHOTTKY diode
Contextual Info: MA111 Schottky Barrier Diodes SBD MA10701 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 +0.2 IF(AV)= 700mA rectification possible 1 0.95 ● type package (3-pin)