MA116 Search Results

MA116

Abstract: MA2J116 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 • Features • Allowing high-density mounting

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 0.35±0.1 M Di ain sc te on na tin nc ue e/ d • Features • Allowing high-density mounting

MA116

Abstract: MA2J116
Contextual Info: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type Unit : mm For general purpose 0.7±0.1 1.25±0.1 0.35±0.1 • Features 1 • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) 2 0.5±0.1

MA116

Abstract: MA2J116 SC-76
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 • Features • Allowing high-density mounting

MA116

Abstract: MA2J116
Contextual Info: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type Unit : mm • Small S-mini type package, allowing high-density mounting • Soft recovery characteristic (trr = 100 ns) Rating Unit VR 40 V Peak reverse voltage VRM 40 V Average forward current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 0.35±0.1 • Features • Allowing high-density mounting • Soft recovery characteristic: trr = 100 ns

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA2J116 (MA116) Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 0.35±0.1 • Features • Allowing high-density mounting • Soft recovery characteristic: trr = 100 ns

MA116

Abstract: MA2J116 SC-76
Contextual Info: Switching Diodes MA2J116 MA116 Silicon epitaxial planar type For general purpose Unit: mm 1.25±0.1 0.7±0.1 0.35±0.1 • Features • Allowing high-density mounting • Soft recovery characteristic: trr = 100 ns 1 2 0.5±0.1 Unit Reverse voltage VR 40

2SA144

Abstract: 2N2416 Low-Power Germanium PNP 2G309 OC45 2SA144 to-92s GT1606 ac107
Contextual Info: LOW-POWER GERMANIUM PNP Item Number Part Number -10 TR64 2N964A GT1606 GT1606 2SA156 OC45 2SA201 NKT143 NKT144 OC43N ~~~~g 15 20 2G345 2G345 2N2401 2N779 2N779A MA113 MA113 MA116 ~~~d: 25 30 NKT261 NKT271 2SA202 2SA202 2N606 2SA160 AC107 AC107 ~~~~1 35 40

MA116

Contextual Info: 2SK1036 Switching Diodes MA116 Silicon epitaxial planer type Unit : mm For general purpose Cathode Anode 0.3 0.5±0.1 ● Soft recovery characteristic trr=100ns 0.625 ● Small S-Mini type package enabling high density mounting 1 • Absolute Maximum Ratings (Ta= 25˚C)

MA1051

Abstract: MA1056 MA1000 Series MA1240 MA1043 MA1062 MA1150 MA1360 MA3000 Series MA1024
Contextual Info: Diodes IVariable Capacitance Diodes Application Type No. o MA363 MA372 o U H F/ VHF T uning MA321 MA334 MA344 MA360 MA339 Vr V V r (V) 30 2 30 3 30 3 2 2 30 3 30 2 A MA2S372 30 MA372J 32 AU Band Tuning CATV Tuning U H F/ VHF Tuning U H F/ VHF AFC FM-AM AFC

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

DIODE SMD J9

Abstract: Relay RL1, 5V, 100 ohm SMD R1D diode smd diode R2C y2 smd zener ZENER SMD J9 HDR2X10 SMD connector smd cap 1206 diode smd J3 smd zener diode code J1
Contextual Info: 12 13 5 5 4 3 2 1 R2E 220 4 R2D 220 3 R2C 220 2 R2B 220 1 R2A 220 1 2 14 3 15 4 16 5 +3V SW1E DIG-8 D 12 J2 CON2 EE_SEL SW1D DIG-8 13 SW1C DIG-8 15 16 SW1B DIG-8 14 SW1A DIG-8 D C5 .01uF C6 22pF C7 22pF 2 C1 3.3uF 1 +3V U1 TSSOP-24 CA1A 100pF 1 16 FR 24 GND

a1024

Abstract: Panasonic diode MA1033 DIODE D29 MA4030 ma4300 zener MA2560 MA7056 MA1Z091 MA2430
Contextual Info: Diode # Zener Diode Series Zener Voltage Vz V MA1000 DO-35 (D28) P d = 500mW MA2000 DO-41 (D29) P D = 1W MA3000/MAZ Mini Type 3 pins (D12) P d = 200mW MA4000 DO-34 (D26) Pc = 370mW MA5000 Mini-Power Type 2 pins (D17) P D = 500mW MA7000 DO-41 (D29) P d = 800mW

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

Contextual Info: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)

MA840

Abstract: MA3330 MA1000 Series MA1000
Contextual Info: Diodes I Variable Capacitance Diodes Application Type No. U HF/ VHF T u n in g Vr V CATV T u n in g UHF/ T u n in g UHF/ VHF AFC F M -A M AFC VC O ro (PF) (PF) (O ) Package No. 30 2 1 3 6 6 -1 6 6 6 25 2.10 -2 .5 6 < 0.5 Mira (2 puis) MA334 30 3 1 0 3 3 —1290

FDW2520C-B

Abstract: Betatherm thermistor 15K 15 k NTC Betatherm
Contextual Info: Thermoelectric Cooler Controller ADN8830 FEATURES High Efficiency Small Size: 5 mm ؋ 5 mm LFCSP Low Noise: <0.5% TEC Current Ripple Long-Term Temperature Stability: ؎0.01؇C Temperature Lock Indication Temperature Monitoring Output Oscillator Synchronization with an External Signal

3 phase bridge scr drive circuit diagram

Abstract: scr firing circuit diagram for three phase rectifier scr firing circuit diagram for 3 phase rectifier ir1110 scr firing ic for three phase bridge SCR 3Phase Control IC PWM 3phase 50hz SCR three phase half bridge controller for scr half b full bridge scr firing circuit diagram for three phase ac power controller snubber FOR 3PHASE BRIDGE RECTIFIER
Contextual Info: IRMDSS1 IR1110 Soft Start IC Reference Design Kit For AC Motor Drives, UPS, Welders, and other applications • • • • • • • • • • • • • • Complete stand alone converter system IR1110 advanced monolithic soft start IC IRKH SCR/Diode Modules

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

genesis chip LED

Abstract: usb at s51 programmer schematic usb extender AT24C00 design Application Note of at24c04 USB 2.0 SD card reader 1999 Universal Genesis HFA3861B S52 EEPROM HWB3163EVAL
Contextual Info: Using the HFA3842EVAL1 Wireless LAN Medium Access Control MAC Evaluation Board TM Application Note P RE L I M I NA R Y August 2000 AN9893 Authors: Mark A. Gurevich and Celia S.R. Flieger Overview The HFA3842EVAL1 kit provides a complete platform for the development

MA154WA

Abstract: MA162 MA177 MA10152D MA171 ma27q MA27 MA27T Bta MA10152K MA1015
Contextual Info: Diodes I Silicon Diodes Switching Type No. V If r (mA) max. (nA) * I r (AV) (V ) Ir CD max. *typ. (pF) Co trr max. (ns) Package No. Type No. V If Ir (mA) max. (nA) max. * typ. (PF) r * I r (a v ) (V ) trr max. (ns) Package No. S M in i (2 pins) D3 M A176W K