WIMA TFM
Abstract: Beckman 785-1 mkb3 wima TFM-.1UF-160V bf197 diode zener ph c9v1 2N4286 2N3642 bf197p transistor 2N2359A
Contextual Info: TENTH EDITION ELECTRONIC COMPONENTS CATALOGUE FAIRCHILD FERRANTI WAYCOM comway BECKMAN SPRAGUE ASTRALUX REDPOINT GREENPAR electronics limited MOLEX MARKET STREET BRACKNELL BERKS RG121JU RADIATRON TEL: SALES, BRACKNELL 0344 24765 TELEX:847201 ERG HELLERMANN
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rg121juwima tfmbeckman 785-1mkb3+7wima tfm-.1uf-160vbf197diode zener ph c9v12n42862n3642bf197ptransistor 2n2359a
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ZTX454
Abstract: ZTX455 ferranti Scans-00107852 Ferranti Semiconductors
Contextual Info: FERRANTI i semiœnductors ZTX454 ZTX455 NPN Silicon Planar M edium Power Transistors DESCRIPTION These are plastic encapsulated, general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Application areas include: Audio Frequency Amplifiers, Drivers
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ztx454ztx455150ma200ma+4100mhzferrantiscans-00107852ferranti semiconductors
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transistor JSW
Abstract: transistor JSW 12 ZTX449 high power amp 100mhz 1w ferranti JSW 70 transistor HFE 400 1w Scans-00107847 jsw transistor SE26
Contextual Info: 4 FERRANTI ZTX449 semiconductors NPN Silicon Planar Medium Power Transistor DESCRIPTION The ZTX449 is a high current transistor encapsulated in the popular E-line package. The device is intended for low voltage, high current L.F. applications and features high power
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ztx449100ma100mstransistor jsw+8transistor jsw 12high power amp 100mhz 1wferrantijsw 70transistor hfe 400 1wscans-00107847jsw transistorse26
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ferranti
Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
Contextual Info: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching
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ztx600ztx601100maferranti+2scans-00107859ferranti semiconductors
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ZTX650
Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
Contextual Info: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages
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ztx650ztx651ztx652ztx653+6100ms605atransistor a7n100-cferrantiscans-00107862
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ZTX750
Abstract: ZTX650 100-C ZTX751 ZTX752 ZTX753 ferranti c6011 ZTX753 PNP Silicon Planar Medium Power Transistors FEATURES SE74
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation a t Tamb = 25*C t • 2A continuous lc • • Excellent gain characteristics to 2A High V CE0: up to 100 volts
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ztx750ztx751ztx752ztx753+8100ma100msztx650100-cferrantic6011ztx753 pnp silicon planar medium power transistors featuresse74
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ZTX552
Abstract: ZTX452 ferranti E-Line package Scans-00107857
Contextual Info: 4 semiconductors FERRANTI ZTX552 PNP Sil icon Planar M e d iu m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb » 25*C. • hFE specified up to 1 amp. • High V CE0 up to 80 volts. • Complementary to ZTX452. GENERAL DESCRIPTION
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ztx552ztx452ferrantie-line package+1scans-00107857
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ztx550
Abstract: SE42 F144 ZTX551 ztx450 ztx550 F143 F145 F146 ZTX450 ZTX451
Contextual Info: FERRANTI semiconductors ZTX550 ZTX551 PNP Silicon Planar M e d iu m Power Transistors FEATURES • High pow er dissipation: 1W a t T amb= 25°C • hFE specified up to 1 Amp • High f T : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors
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ztx550ztx551ztx550/551-10ma+9-100mase42f144ztx450 ztx550f143f145f146ztx450ztx451
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ZTX753
Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
Contextual Info: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts
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ztx750ztx751ztx752ztx753+8100ma100msztx6506.8j 100vscans-00107864c6011ferranti semiconductorsse74
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ZTX650
Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
Contextual Info: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts
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ztx650ztx651ztx652ztx653+5100msferrantise60transistor a7nscans-00107861
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2TX451
Abstract: ztx450 oms 450 Q 451 ztx450 ztx550 ZTX550 F137 F139 ZTX451 ZTX551
Contextual Info: FERRANTI semiconductors ZTX450 ZTX451 NPN Si li co n Planar M e d i u m P o w e r Transistors FEATURES • High pow er dissipation: 1W a t Tarnb= 25°C • hFE specified up to 1 Amp • High fT : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors
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ztx450ztx451ztx45ztx450/451+9100ma2tx451oms 450q 451ztx450 ztx550ztx550f137f139ztx551
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ZTX453
Abstract: ZTX 15 Ferranti Semiconductors ZT Ferranti ZTX452 ferranti NPN Silicon Planar Medium Power Transistors ZTX 452 ZTX 453
Contextual Info: FERRANTI i semiconductors ZTX452 ZTX453 NPN Si licon Planar M e d i u m P o w e r Transistors FEATURES • High power dissipation: 1W at Tamb = 25‘C. • hFE specified up to 1 amp. • High V CEO up to 100 volts. GENERAL DESCRIPTION These are plastic encapsulated, general purpose transis
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ztx452ztx453ztx 15ferranti semiconductors+3zt ferrantiferrantinpn silicon planar medium power transistors ztx 452 ztx 453
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DL701
Abstract: DL707 transistor ZTX108 application dual slope DVM decodar ZN424 ZN424E Ferranti Semiconductors ferranti TRANSISTOR S1d
Contextual Info: *FERRANTI semiconductors Low Power 3 ZNA116E D ¡q it D . V . M . I n t e o r a t e d C i r c u i t FEA TU R ES • • • • • • • • • 3 | Decade display ±1999 max. reading Autom atic polarity detection and indication Leading zero suppression
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zna116ezna7447adl701dl707+8transistor ztx108application dual slope dvmdecodarzn424zn424eferranti semiconductorsferrantitransistor s1d
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2n222a
Abstract: ZS106 2n222a npn transistor ZS90 N2222 2N2223 transistor 2n222a n3055 ZS132 ZT1482
Contextual Info: SILICON TRANSISTORS High Voltage n-p-n T h e transistors listed in the table b elo w have m axim um coliecto r-em itter voltage ratings o f 1 0 0 volts or higher and m ay therefore be used in applications w here high voltages are encountered. Further inform ation on these transistors can be found on the page indicated in the last colum n of the table, or on request fro m Ferranti Ltd.
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zt1480zt1482zt1484zt1486+15zt1488zt14902n30552n34392n34402n34412n222azs1062n222a npn transistorzs90n22222n2223transistor 2n222an3055zs132
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MRF472
Abstract: MRF245 MRF243 MPSA13K MPS6579 MRF420 BF497 MRF304 MRF250 PE210B
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO BSW43 BSW43 BSW43 BSX52 MMBT4124 MMBT4124 MMBT4124 KT379B ZTX114 2SC137 -5 10 ~~~~ 2SD1581M 2SD1581L JE9143A 2SD1581K JE9143B JE9143 JE9143C 2N5188 -15 20 ~~~~~D BSY58 BF374 BF375C 2SC1293 2SC1293 2SC1293
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bsw43bsx52mmbt41ranmrf472+9mrf245mrf243mpsa13kmps6579mrf420bf497mrf304mrf250pe210b
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2N50b
Abstract: BCY5B 2SC307B DIODE bon BCW60RD 2N50B2 BFW83
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 BFW83 2SC997 2N50B2 2N50B2 TISB4 TISB4 BSX2B 2SC3122 BFW64 NR421DE NR421DF BF260 BF261 2SC1394 2SC1394 BF329 2N3933 BFW70 ZTX327 BFSll ~~iJ~7 25 30 MPSH33 SE5035 BFR37 BFR37 2N4934 BCW60A
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bfw832sc9972n50b22sc3122+10bfw64nr421denr421dfbf260bf2612n50bbcy5b2sc307bdiode bonbcw60rd
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2SC1018
Abstract: sk3024 2S01664 2S01526 2N3925 2N3818 2S01005 bly14 PTC144 2N3718
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 25 30 2N3444 ZTX451 2N2404 2N2404 2N3818 2SC777 ZTX452 2SC1517AK :iK3024 SK3024 ZTX453 PTC144 2S01005 2S01005 B2-8Z B3-12 S01574 40450 ~~9~~0 35 40 TP3253 2N3253 BFX51 BFX61 BlY14 2SC140 TP3252
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2N3633
Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M
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2n3633tip3002n36092sa8140+6mh0816bcx53 rohm2sb631 hitachi2n35662n3519sk3025
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MRF212
Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413
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ot-16192varstr-10ot-123var+11o-220mrf212b0507mrf221motorola diodeb0106ab12 nec diode2sc942n58612n4127mrf603
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bvc49
Abstract: TIPP110 FMMT388 U2TA506 BSR51 SE1001 2N2724 2S0152 transistor* SE1001
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ic Max PD Max (V) (A) (W) hFE Min Max fT ICBO Max (Hz) (A) 120M 0.1u 100n 100m 100n 10u tr Max (8) tf Max Toper Max (8) (Oe) 400n 150 150 150 150 150 Package Style NPN Darlington Transistors, (Cont'd)
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2s011112s01198a2s0946amps6725+142sc39852s01661m2s0152192pu45a2n6725bvc49tipp110fmmt388u2ta506bsr51se10012n27242s0152transistor* se1001
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2N2369 SOT-23
Abstract: nec RF package SOT89 2SC934 BSX26 2N5180 2SC389 BFY63 s0918 BSX87 2SC288A
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 >= Manufacturer V(BR)CEO fT (V) (Hz) hFE 15 15 15 15 15 15 15 15 15 15 500M 500M 500M 500M 500M 500M 500M 500M 500M 500M 40 40 40 40 40 40 40
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2sc3735bfr54bsx20ph2369+13ztx313ztx3142n23692sc3892n2369 sot-23nec rf package sot892sc934bsx262n5180bfy63s0918bsx872sc288a
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rca 101m
Abstract: Delco 2N1522 2n1543 2n1518 2n1564 2SC968 2N1553 2n1457 ED-1402
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 20 BC232 ZTX223 TP4384 ZTX330 BFY68 BFY68 TP5449 2MC509 ~~g~g~ 25 30 MPS3704 BSY54 2222 PN5449 2N4383 2N4384 A8T3704 2N5449 ~~~!~~U 35 40 TED1702K 2SC352A ED1402A BC848A D4C31 4C31 ZTX238 TD101 ~g~g~tA 45 50
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ZTX313
Abstract: BSV26 ZTX314 BSV27 ZTX312 2TX313 ferranti FERRANTI ELECTRONICS BSV25 ZTX310
Contextual Info: NPN Silicon Planar High Speed Switching Transistors DESCRIPTION These are plastic encapsulated transistors specifically designed for high speed sw itching applications and are also useful where very short storage times and low capacitance are required. The E-line package is formed by injection moulding a
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o-5/398-munich-22ztx313bsv26+8ztx314bsv27ztx3122tx313ferrantiferranti electronicsbsv25ztx310
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ZTX107
Abstract: ferranti ula ZTX109 ZTX108 ZTX107B BC107 plastic ZTX108C ZTX107A FERRANTI ELECTRONICS replacement ztx108
Contextual Info: D 6 S C „ ,P T ,O N ¿ \ W f a Z These are plastic encapsulated general purpose transistors designed fo r small and m edium signal am p lific atio n s fro m d.c. to radio freq uencies. A p p lic atio n areas in clu d e : A udio Frequency A m p lifie rs ,
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o-5/398-munich-22ztx107ferranti ula+8ztx109ztx108ztx107bbc107 plasticztx108cztx107aferranti electronicsreplacement ztx108
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