ZTX601 Search Results

ZTX600

Abstract: tam 2k
Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -J U N E 94_ — - FEATURES * 160 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 Watt

ZTX600

Abstract: ZTX601
Contextual Info: NPN Silicon Medium Power Darlington Transistors ZTX600 ZTX601 FEATURES • • • • • 1,5W power dissipation at T amb= 2 5°C 1A continuous collector current High V CE0 up to 16 0 V Guaranteed hFE specified up to 1A Fast sw itching D E SC R IP T IO N

ZTX601

Abstract: ZTX600 DSA003770
Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

ferranti

Abstract: ZTX600 ZTX601 Scans-00107859 Ferranti Semiconductors
Contextual Info: FERRANTI semiconductors ZTX600 ZTX601 NPN Silicon Medium Power Darlington Transistors FE A T U R ES • 1.5W power dissipation at Tamb = 25°C • 1A continuous collector current • High V CE0 up to 160V • Guaranteed hFE specified up to 1A • Fast switching

ztx601

Contextual Info: ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K 100K IC=50mA, VCE=10V* IC=0.5A, VCE=10V* IC=1A, VCE=10V*

Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 – JUNE 94 FEATURES * 160 Volt VCEO * 1 Amp continuous current * Gain of 5K at IC=1 Amp * Ptot= 1 Watt C B E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX600

ZTX601

Abstract: l05a T092 ZTX600 ZTX601 B E C
Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94 FEA T U R E S * 160 Volt V CE0 * * 1 Amp continuous current Gain of 5K at lc =1 Am p * Ptot= 1 W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Collector-Base Voltage

ZTX601

Contextual Info: ZTX600 Not Recommended for New Design Please Use ZTX601 ZTX600 ZTX601 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL Static Forward Current Transfer Ratio hFE ZTX600 ZTX601 MAX. MIN. TYP. MAX. 1K 2K 1K 1K 100K 2K 1K

ZTX601B

Abstract: transistor 5k 180 watt lamp planar FXT601B DSA0037551
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 – MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX601B FOR GRAPHS

transistor 5k

Contextual Info: Not Recommended for New Design Please Use ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 – MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages

Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94_ FEATURES * 160 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 W a tt c . f E-Line

ZTX601B

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 - MARCH 94 FEATURES * 160 Volt VCE0 * Gain o f 5K at lc=1 Am p * P,o,= 1 W a tt APPLICATIONS * * Lamp, solenoid and relay drivers Replacement o f T0126 and T0220 packages REFER TO ZTX601B FOR GRAPHS

Contextual Info: DISCONTINUED PLEASE USE ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 – MARCH 94 FEATURES * 160 Volt VCEO * Gain of 5K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages

Contextual Info: ZETEX SEM ICONDU CTOR S IbE D • c^70S7fl 000bfl7fl b ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS \ ' Z c\-2-3> NPN HIGH VOLTAGE Dice type VCBO Min VCEO Min Volts Volts •cBO , Max a t VCB nA Volts at M ilt Max v« mA V o lt* V easw ■ at lc

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

MPSA42

Abstract: MPSA43 ZTX341 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SEMICONDUCTOR DICE NPN HIGH VOLTAGE Min. Min. Max. at V CB Volts Volts ZTX657 M PSA42 ZTX656 M PSA43 ZTX655 ZTX455 ZTX454 ZTX654 ZTX342 ZTX341 h FE ICBO V CBO V CEO Dice type 300 300 200 200 150 16 0 140 125 120 10 0 300 300 200 200 150 14 0 120 125 120 100

BC338C

Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

2N6700

Contextual Info: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. NPN 2N 6714 2N 6715 2N 6724 2 N 6725 2N 6716 2N 6717 2N6731 2N 6718 PNP V CBO V e t o 2N 6726 2N 6727 — — 2N 6728 2N 6729 2N 6732 2N 6730 !C !c m P,0, Max. V CE|Sat at V V A A V 40 50 50

ZVN2106AM

Abstract: ZVP2106AM1 ZTX753M1 ZTX751M1 ZVP0535AM1 ZTX449 42-06A ZTX653M
Contextual Info: 03 PLESSEY SENI C O N D / D I SC R E T E D E I 7 2 5 0 5 3 3 0 0 0 b 7 fl0 S I ~ E-LIN E''M l' 1 The package that offers you more POWER and PERFORMANCE to meet your Surface Mount Requirements. The range of E-Line M1 products has been specially selected to meet current and future design requirements

BC372P

Abstract: ZTX849 ZTX601A ZTX851 ZTX853 ZTX855 ZTX857 ZTX858 ZTX869 ZTX955
Contextual Info: SUPER E-LINE TABLE 3: HIGH CURRENT SUPER E-LINE TRANSISTORS Pd=1.2 Watts This range of devices is rated at 1.2 Watts and offers extremely low saturation voltages coupled with high continuous and pulsed current capability. Typical application areas to benefit from these products

MPSA42

Abstract: MPSA43 ZTX342 ZTX454 ZTX455 ZTX654 ZTX655 ZTX656 ZTX657
Contextual Info: SLE D • T c17057fl D 0 G 7 D S 1 fibT ■ Z E T B SEMICONDUCTOR DICE ZETEX S E M I C O N D U C T O R S NPN HIGH VOLTAGE V CBO V CEO 300 300 200 200 150 160 140 125 120 100 300 300 200 200 150 140 120 125 120 100 Volts Min. Max. 100 100 100 100 100 100 100

ZTX458

Abstract: BF493 BF392 BF393 MPSA92 ZTX558 ZTX658 ZTX757 ZTX758 2N5401 BF391
Contextual Info: TABLE 13 : NPN/PNP HIGH VOLTAGE TRANSISTORS The tra n s is to rs s h o w n in th is ta b le are designed fo r d rivin g num erical in d ica to r tu b es, neon lam ps and o th e r a p p lica tio n s requiring high vo lta g e ca p a b ility. V cbo M ax ICBO