ZTX550 Search Results

ZTX550

Abstract: ZTX551 IC101
Contextual Info: ZTX550 ZTX551 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS I ISSUE 1- MARCH 94 I FEATURES * * 60 Volt VCEO * Pt,l= 1 Watt 1 Amp continuous current ABSOLUTE MAXIMUM w RATINGS. SYMBOL PARAMETER Collector-Base Voltage ‘CEO ‘EBO —.— Peak Pulse Current

ztx550

Contextual Info: Not Recommended for New Design Please Use ZTX550 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT550 ISSUE 1 – SEPT 93 FEATURES * 45 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX550 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO ZTX550 ZTX551

ZTX552

Abstract: ZTX550 ZTX551 ZTX553 TMB-250
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 - MARCH 94_ FEATURES * 60 Volt VCE0 * 1 Amp continuous current * Pi0,= 1Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

ztx550 equivalent

Abstract: FXT550 ZTX550 DSA0037541
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FXT550 ISSUE 1 – SEPT 93 FEATURES * 45 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt B C REFER TO ZTX550 FOR GRAPHS E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

ZTX550

Abstract: ZTX551 ztx550 equivalent DSA003768
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2

0550E

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 45 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt REFER TO ZTX550 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER VALUE UNIT v CBO -60 V v CEO -45

ztx550

Abstract: SE42 F144 ZTX551 ztx450 ztx550 F143 F145 F146 ZTX450 ZTX451
Contextual Info: FERRANTI semiconductors ZTX550 ZTX551 PNP Silicon Planar M e d iu m Power Transistors FEATURES • High pow er dissipation: 1W a t T amb= 25°C • hFE specified up to 1 Amp • High f T : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors

Ztx550

Abstract: ZTX551 SE74
Contextual Info: PIMP Silicon Planar M edium Power Transistors ZTX550 ZTX551 FEATU RES • • • H igh p ow er dissipation: 1W at T amb = 2 5 ° C h FE specified up to 1 A H igh fT: 2 0 0 M H z typical D E S C R IP T IO N T h e se are plastic encapsulated, general purp ose tran sistors designed for small and

.1uf capacitor

Abstract: 1uf capacitor 1n4000 DIODE 1N4000 ZTX300 Solenoid Driver 2a "Pushbutton Switch" ZTX550 latching solenoid DN27
Contextual Info: Design Note 27 Issue 1 February 1996 Design Note 27 Issue1 February 1996 +12V 12V Solenoid Driver/Latch Single Switch Operated, High Current High Side Switch 270 ZTX550 ZTX550 This circuit has been designed to control a solenoid by the operation of a single

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 - SEPT 93_ FEATURES * 45 V olt V,CEO 1 Am p continuous current P,o,= 1 W att REFER TO ZTX550 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VALUE UNIT

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 - MARCH 94_ FEATURES * 60 V olt V,CEO 1 A m p continuous current P.„.= 1 W att ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX551 ZTX550 Collector-Base Voltage VCbo -60

m 60 n 03 g10

Contextual Info: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60

Contextual Info: w . G FC PTFSSFY u liV > S E M I . O M I JULY 1995 PRELIMINARY INFORMATION C I (* K S D.S. 3653 2.3 SL6619 DIRECT CONVERSION FSK DATA RECEIVER The SL6619 is an advanced Direct Conversion FSK Data Receiver for operation up to 450MHz. The device integrates

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

ZTX751

Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
Contextual Info: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

BC338C

Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Contextual Info: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military

BC337b

Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Contextual Info: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector

BC557P

Abstract: BFS60 ZTX304 MPS3645 MPS6566 ZTX551 BC182P BC546P BCY65EP BFS96
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

ZTX3904

Abstract: BFS98 MPS3645 ZTX237
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include:

BCY56

Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Contextual Info: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment

2TX451

Abstract: ztx450 oms 450 Q 451 ztx450 ztx550 ZTX550 F137 F139 ZTX451 ZTX551
Contextual Info: FERRANTI semiconductors ZTX450 ZTX451 NPN Si li co n Planar M e d i u m P o w e r Transistors FEATURES • High pow er dissipation: 1W a t Tarnb= 25°C • hFE specified up to 1 Amp • High fT : 200 M H z typical DESCRIPTION These are plastic encapsulated general purpose transistors

BFS98

Abstract: MPS3645 2N3906 BC182P BC546P BCY65EP BFS61 MPS2222A MPSA05 MPSA06
Contextual Info: NPN GENERAL PURPOSE T A B L E 1 - NPN SILICO N PLAN AR G EN E R A L PURPOSE: T R A N S IS T O R S The devices shown in this table are general purpose transistors designed forsmall and medium signal amplification from d.c. to radio frequencies. Typical application areas include: