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    SIA519EDJ Search Results

    SIA519EDJ Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIA519EDJ-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.5A SC70-6 Original PDF 14
    SF Impression Pixel

    SIA519EDJ Price and Stock

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    Vishay Intertechnologies SIA519EDJ-T1-GE3

    Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A
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    TME SIA519EDJ-T1-GE3 3,000
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    Avnet Americas SIA519EDJ-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Newark () SIA519EDJ-T1-GE3 Tape & Reel 10
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    SIA519EDJ-T1-GE3 Cut Tape 1
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    SIA519EDJ-T1-GE3 Tape & Reel 3,000
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    SIA519EDJ-T1-GE3 Tape & Reel 100
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    SIA519EDJ-T1-GE3 Cut Tape 1
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    Bristol Electronics SIA519EDJ-T1-GE3 32
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    Chip 1 Exchange SIA519EDJ-T1-GE3 7,845
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    Avnet Asia SIA519EDJ-T1-GE3 54 Weeks 3,000
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    EBV Elektronik SIA519EDJ-T1-GE3 53 Weeks 3,000
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    Vishay Siliconix SIA519EDJ-T1-GE3

    20V 4.5A/4.5A N&P-CH MOSFET
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    RS SIA519EDJ-T1-GE3 Bulk 3,000
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    Vishay Huntington SIA519EDJ-T1-GE3

    MOSFET N/P-CH 20V 4.5A SC70-6
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    Win Source Electronics SIA519EDJ-T1-GE3 24,000
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    SIA519EDJ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    65176

    Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    sia519edj2002/95/ecsc-70-618-jul-08+265176sia519edj-t1-ge3 PDF

    SiA519EDJ

    Abstract: 16503 AN609
    Contextual Info: SiA519EDJ Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    sia519edjan60930-jul-0916503 PDF

    65176

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    sia519edj2002/95/ecsc-70-611-mar-11+165176 PDF

    SiA519EDJ

    Contextual Info: SPICE Device Model SiA519EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original
    sia519edj18-jul-08 PDF

    Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    sia519edjsc-70-62002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    sia519edj2002/95/ecsc-70-62011/65/eu+112-mar-12 PDF

    Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    sia519edjsc-70-62002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    65176

    Abstract: S0926 SIA519
    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original
    sia519edj2002/95/ecsc-70-62011/65/eu+412-mar-1265176s0926sia519 PDF

    Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested


    Original
    sia519edjsc-70-6sia533edj-t1-ge32002/95/ec+32011/65/eujs709a02-oct-12 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Contextual Info: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original
    aon2240aon2401aon2405aon2406+14aon2407aon2408aon2409aon2410aon2420aon2701nx3008irlhs6242sia431djssm6j503nuirlhs2242dmn3730ufb4fdma1028nzfdma3028n PDF

    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original
    sc-70sia519edjcom/mosfets/powerpak-sc-70-package/vmn-pt0131-1402 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8si4812bsi-4102si7149dpsim400si4932si7135sib914si4477 PDF