SIA519EDJ Search Results
SIA519EDJ Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIA519EDJ-T1-GE3 | Vishay Siliconix | FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V 4.5A SC70-6 | Original | 14 |
SIA519EDJ Price and Stock
Vishay Intertechnologies SIA519EDJ-T1-GE3Transistor: N/P-MOSFET; TrenchFET®; unipolar; 20/-20V; 4.5/-4.5A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIA519EDJ-T1-GE3 | 3,000 |
|
Get Quote | |||||||
|
SIA519EDJ-T1-GE3 | Tape & Reel | 52 Weeks | 3,000 |
|
Buy Now | |||||
|
SIA519EDJ-T1-GE3 | Tape & Reel | 10 |
|
Buy Now | ||||||
| SIA519EDJ-T1-GE3 | Cut Tape | 1 |
|
Buy Now | |||||||
| SIA519EDJ-T1-GE3 | Tape & Reel | 3,000 |
|
Buy Now | |||||||
| SIA519EDJ-T1-GE3 | Tape & Reel | 100 |
|
Buy Now | |||||||
| SIA519EDJ-T1-GE3 | Cut Tape | 1 |
|
Buy Now | |||||||
|
SIA519EDJ-T1-GE3 | 32 |
|
Get Quote | |||||||
|
SIA519EDJ-T1-GE3 | 7,845 |
|
Get Quote | |||||||
|
SIA519EDJ-T1-GE3 | 54 Weeks | 3,000 |
|
Get Quote | ||||||
|
SIA519EDJ-T1-GE3 | 53 Weeks | 3,000 |
|
Get Quote | ||||||
Vishay Siliconix SIA519EDJ-T1-GE320V 4.5A/4.5A N&P-CH MOSFET |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIA519EDJ-T1-GE3 | Bulk | 3,000 |
|
Get Quote | ||||||
Vishay Huntington SIA519EDJ-T1-GE3MOSFET N/P-CH 20V 4.5A SC70-6 |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
SIA519EDJ-T1-GE3 | 24,000 |
|
Buy Now | |||||||
SIA519EDJ Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
65176
Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
|
Original |
sia519edj2002/95/ecsc-70-618-jul-08+2 | |
SiA519EDJ
Abstract: 16503 AN609
|
Original |
sia519edjan60930-jul-0916503 | |
65176Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V |
Original |
sia519edj2002/95/ecsc-70-611-mar-11+1 | |
SiA519EDJContextual Info: SPICE Device Model SiA519EDJ Vishay Siliconix N-Channel and P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized |
Original |
sia519edj18-jul-08 | |
|
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested |
Original |
sia519edjsc-70-62002/95/ec2011/65/eu+2 | |
|
Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V |
Original |
sia519edj2002/95/ecsc-70-62011/65/eu+1 | |
|
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested |
Original |
sia519edjsc-70-62002/95/ec2011/65/eu+2 | |
65176
Abstract: S0926 SIA519
|
Original |
sia519edj2002/95/ecsc-70-62011/65/eu+4 | |
|
Contextual Info: SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested |
Original |
sia519edjsc-70-6sia533edj-t1-ge32002/95/ec+3 | |
NX3008
Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
|
Original |
aon2240aon2401aon2405aon2406+14 | |
|
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance: |
Original |
sc-70sia519edjcom/mosfets/powerpak-sc-70-package/vmn-pt0131-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
|
Original |
mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8 | |
Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
|
Original |
diod92vmn-sg2127-0911diode sot-23 marking 15dsi4210+8 |