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    Samtec Inc MMSS-09-26-L-17.00-D-K-LDS

    - Bulk (Alt: MMSS-09-26-L-17.00-D-K-LDS)
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    Avnet Americas MMSS-09-26-L-17.00-D-K-LDS Bulk 2 Weeks, 4 Days 1
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    Sager MMSS-09-26-L-17.00-D-K-LDS 1
    • 1 $7.49
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    Master Electronics MMSS-09-26-L-17.00-D-K-LDS
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    Samtec Inc MMSS-09-26-L-04.00-D-K-LUS

    Cable Assembly Discrete Wire 0.102m 9 POS Discrete Wire Housing to 9 POS Discrete Wire Housing RCP-RCP - Bulk (Alt: MMSS-09-26-L-04.00-D-K-LUS)
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    Avnet Americas MMSS-09-26-L-04.00-D-K-LUS Bulk 2 Weeks, 3 Days 1
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    Sager MMSS-09-26-L-04.00-D-K-LUS 1
    • 1 $7.22
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    Master Electronics MMSS-09-26-L-04.00-D-K-LUS
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    Samtec Inc MMSS-09-26-L-03.25-D-K-LDS

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    Avnet Americas MMSS-09-26-L-03.25-D-K-LDS Bulk 2 Weeks, 3 Days 1
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    Sager MMSS-09-26-L-03.25-D-K-LDS 1
    • 1 $7.20
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    Master Electronics MMSS-09-26-L-03.25-D-K-LDS
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    Samtec Inc MMSS-09-26-L-12.00-D-K-LDS

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    Avnet Americas MMSS-09-26-L-12.00-D-K-LDS Bulk 2 Weeks, 3 Days 1
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    Sager MMSS-09-26-L-12.00-D-K-LDS 1
    • 1 $7.38
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    TURCK Inc MS3110A-20-16S-0926-1

    Mil; |Turck MS3110A-20-16S-0926-1
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    Newark MS3110A-20-16S-0926-1 Bulk 1
    • 1 $329.20
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    S0926 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SQ2360EES

    Abstract: SQ2360EES-T1-GE3
    Contextual Info: SQ2360EES Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		sq2360ees2002/95/ecaec-q101o-236+4ot-23sq2360electual18-jul-08sq2360ees-t1-ge3 PDF

    65176

    Abstract: SiA519EDJ SC-70-6 SiA519EDJ-T1-GE3
    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		sia519edj2002/95/ecsc-70-618-jul-08+265176sia519edj-t1-ge3 PDF

    Si1902DL-T1-E3

    Abstract: Si1902DL Si1902DL-T1-GE3
    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		si1902dl2002/95/ecot-363sc-70+3si1902dl-t1-e3si1902dl-t1-ge318-jul-08 PDF

    ANALOG devices MARKING CODE

    Abstract: analog devices marking
    Contextual Info: High Performance, Low Power, ISM Band FSK/GFSK/OOK/MSK/GMSK Transceiver IC ADF7023 Silicon Anomaly This anomaly sheet describes the known bugs, anomalies, and workarounds for the ADF7023 transceiver and relates to Silicon Revision 2.2, which has corresponding silicon revision readback codes of 0x70, 0x23, 0x02, 0x02. See the ADF7023 data sheet for details on how to read


    Original     		adf7023er001er002er003+3er004analog devices marking codeanalog devices marking PDF

    sq4410ey

    Abstract: MARKING 2623 MOSFET SQ4410EY-T1-GE3
    Contextual Info: SQ4410EY Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd


    Original     		sq4410ey2002/95/ecaec-q101sq4410ey-t1-ge3+218-jul-08marking 2623 mosfet PDF

    Contextual Info: SPICE Device Model SiZ720DT Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		siz720dt18-jul-08 PDF

    65176

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		sia519edj2002/95/ecsc-70-611-mar-11+165176 PDF

    SQ7415EN-T1-E3

    Contextual Info: SQ7415EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.065 RDS(on) (Ω) at VGS = - 4.5 V 0.110 • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		sq7415en2002/95/ecaec-q101121lectual+218-jul-08sq7415en-t1-e3 PDF

    Si1902DL-T1-E3

    Abstract: Si1902DL-T1-GE3 Si1902DL
    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		si1902dl2002/95/ecot-363sc-70+3si1902dl-t1-e3si1902dl-t1-ge311-mar-11 PDF

    SUP60N06-12P-GE3

    Abstract: SUP60N06-12P SUP60N06-12P-E3 SUP60N06-12 69070
    Contextual Info: New Product SUP60N06-12P Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 60 0.012 at VGS = 10 V 60d 33 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		sup60n06-12p2002/95/eco-220absup60n06-12p-e3+4sup60n06-12p-ge318-jul-08sup60n06-1269070 PDF

    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		sia519edj2002/95/ecsc-70-62011/65/eu+112-mar-12 PDF

    SQ7414EN-T1-E3

    Contextual Info: SQ7414EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) (Ω) at VGS = 10 V 0.025 RDS(on) (Ω) at VGS = 4.5 V 0.036 ID (A) • New Low Thermal Resistance PowerPAK® 1212-8 Package with 1.07 mm Profile


    Original     		sq7414en2002/95/ecaec-q101powerpak1212-8+2sq7414en-t1-e318-jul-08 PDF

    Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		sib455edksc-752002/95/ecsc-75-6l-single+32011/65/eujs709a02-oct-12 PDF

    adf7023

    Abstract: er003 Silicon Image ADF7023BCPZ Analog devices marking code A
    Contextual Info: High Performance, Low Power, ISM Band FSK/GFSK/OOK/MSK/GMSK Transceiver IC ADF7023 Silicon Anomaly This anomaly sheet describes the known bugs, anomalies, and workarounds for the ADF7023 transceiver and relates to Silicon Revision 1.2, which has corresponding silicon revision readback codes of 0x70, 0x23, 0x01, 0x02. See the ADF7023 data sheet for details on how to


    Original     		adf70230x1130x35d0x324+5s09265-0-8/10er003silicon imageadf7023bcpzanalog devices marking code a PDF

    SQ4470EY-T1-GE3

    Contextual Info: SQ4470EY Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) (Ω) at VGS = 10 V 0.012 • TrenchFET Power MOSFET RDS(on) (Ω) at VGS = 4.5 V 0.014


    Original     		sq4470ey2002/95/ecaec-q101sq4470ey-t1-ge3+118-jul-08 PDF

    65176

    Abstract: S0926 SIA519
    Contextual Info: New Product SiA519EDJ Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Typical ESD Protection: N-Channel 2000 V


    Original     		sia519edj2002/95/ecsc-70-62011/65/eu+412-mar-1265176s0926sia519 PDF

    Contextual Info: New Product SiB455EDK Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 9a 0.039 at VGS = - 2.5 V - 9a 0.069 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -3 • Halogen-free According to IEC 61249-2-21


    Original     		sib455edksc-752002/95/ecsc-75-6l-single+118-jul-08 PDF

    marking 6pin

    Contextual Info: Si1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.385 at VGS = 4.5 V 0.70 0.630 at VGS = 2.5 V 0.54 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 2.5 V Rated


    Original     		si1902dl2002/95/ecot-363sc-70+4si1902dl-t1-e3si1902dl-t1-ge311-mar-11marking 6pin PDF

    Contextual Info: SQ7415EN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET Power MOSFET VDS (V) - 60 RDS(on) (Ω) at VGS = - 10 V 0.065 RDS(on) (Ω) at VGS = - 4.5 V 0.110 • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		sq7415en2002/95/ecaec-q101sq7415en-t1-e3+111-mar-11 PDF