8502F Search Results

Contextual Info: 2W Power Amplifier 13.75 – 14.5 GHz ITT8502 FN / FP ADVANCED INFORMATION FEATURES • • • • 22% Typical Power Added Efficiency High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process VDD N/C VDD N/C ITT 8502FN

Contextual Info: 2W Power Amplifier 13 – 15 GHz ITT8502 ADVANCED INFORMATION FEATURES • • • • • • 24% Typical Power Added Efficiency 17.5 dB Typical Small Signal Gain 39.5 dBm Third Order Intercept Point Flange mount package designed for optimum electrical and thermal performance

VMO 440

Abstract: MOSFET Modules VMO 550-01F 40-06P1 C636 "MOSFET Modules" VKM 40-06P1
Contextual Info: MOSFET Modules N Channel Enhancement Types suffix "F“ = HiPerFET technology with intrinsic diode Voss V ► New ► VMO VMO VMO ► VMO ► VMO ► VMO ► VMO 150-01P1 550-01F 650-01F 580-02F 40-05P1 60-05F 80-05P1 100 100 100 200 500 500 500 •o* A

VMO 440

Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Contextual Info: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)

Contextual Info: Dual Power HiPerFET Module VMM 85-02F VD S S D 25 RD S{on Phaseleg Configuration High dv/dt, Low trr, HDMOS™ Family = 200 V = 83 A = 25 mû •tU 9 i— Prelim inary Data 11 10 ^ Symbol Test Conditions v DSS T j = 25°C to 15 0 “ C 200 V V MR T j = 25” C to 150°C; RQS = 10 k£J

Contextual Info: Dual Power HiPerFET Module VMM 85-02F V DSS I D25 RDS on = 200 V = 83 A = 25 mQ Phaseleg Configuration High dv/dt, Low trr, HDMOS™ Family Preliminary Data Maximum Ratings Symbol Test Conditions V DSS Td = 25°C to 150°C 200 V v DGR Td = 25°C to 150°C; RGS = 10 k£i

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: OIXYS VMM 85-02F Dual Power HiPerFET Module VDSS I d 25 RDS on = 200 V = 83 A = 25 mQ -o 3 Phaseleg Configuration High dv/dt, Low trr, HDMOS™ Family Ji 8 90 1 Preliminary Data :n>° : s I % L; -T O 2 Symbol Test Conditions Maximum Ratings V DSS Tj = 25°C to 150°C

7N60B equivalent

Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches

Contextual Info: VMM 85-02F Dual Power HiPerFETTM Module VDSS = 200 V ID25 = 84 A Ω RDS on = 25 mΩ Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family 2 3 3 11 10 9 8 1 8 9 1 11 10 2 Maximum Ratings 2 = Source 1 8 = Gate 2 10 = Kelvin Source 1 1 = Drain 1, Source 2

650-01F

Abstract: DIXYS 8502F c310 vmk 90-02
Contextual Info: DIXYS _ MOSFET Modules v p ^Dfconl DSS Diijon) Contents 0 0} ' Page . max. Tc = 25 °C Tc = 25 °C V A n 100 590 0.0021 > VMO 550-01F C3-2 690 0.0018 >• VMO 650-01F C3-4 200 85 0.025 85 0.025 385 0.0046 420 0.0042 C3-6 VMK 90-02 T2 C3-10

Contextual Info: VMM 85-02F Dual Power HiPerFETTM Module VDSS = 200 V ID25 = 84 A RDS on = 25 mW Phaseleg Configuration High dv/dt, Low trr, HDMOSTM Family 2 3 3 11 10 9 8 1 8 9 1 11 10 2 Maximum Ratings 2 = Source 1 8 = Gate 2 10 = Kelvin Source 1 1 = Drain 1, Source 2 3 = Drain 2

IXTH7P50

Contextual Info: VM M MOSFET Modules VM K N-Channel Enhancement Mode V DSS max. B *D25 Tc = 25°C A DS{on max. Te * 25°C mû ciM Cr8S typ. typ. trr typ. typ. Q0 ^thJS max. nF nF ns nC Package style K/W PD max. T > 2 5 “C W Fig. No. Type TJM = 150°C ► New ► VMM 600-007F *

380-02F

Abstract: C314
Contextual Info: MOSFET Modules _ Contents D v DSS ^D co n t max. Tc = 25°C Tc = 25°C V A m ii 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 450 4.6 VMO 450-02F 1> C3-14 500 4.2 VMO 500-02F 2> C3-18 200 TO 240 DS(on)max ^ 0* ^ . VMK 90-02 T2