2SB779 Search Results

2SB0779

Abstract: 2SB779
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 0.4±0.2 1.50+0.25

2SB0779

Abstract: 2SB779
Contextual Info: Transistors 2SB0779 2SB779 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 (0.95) (0.95)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 0.4±0.2 5˚

2SB0779

Abstract: 2SB779
Contextual Info: Transistor 2SB0779 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 0.65±0.15 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● 0.65±0.15 Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at the low collector voltage.

2SB0779

Abstract: 2SB779
Contextual Info: Transistor 2SB0779 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 0.40+0.10 ñ0.05 • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO –25 V Collector to emitter voltage VCEO –20 V Emitter to base voltage

Transistor hFE CLASSIFICATION Marking CE

Abstract: hFE CLASSIFICATION Marking CE The 2002 is a COMMON BASE transistor Vbe 8 V 2SB779 hFE is transistor to-220 2SB0779
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0779 (2SB779) Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 M Di ain sc te

2SB779

Contextual Info: Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 1.45 0.95 0.65±0.15 1 0.95 3 +0.1 +0.2 ● 2.9 –0.05 ● 0.65±0.15 Low collector to emitter saturation voltage VCE sat . Satisfactory linearity of hFE at the low collector voltage.

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

b 817

Abstract: toshiba 2SB755 B817 2SB755 2SB897 2SB927 2SA1213 2SB1272 2sb789a 2SA1194
Contextual Info: - £ Type No. jcg 7 |3 £ Manuf. & T T S « B m SANYO 2SA1703 2SB 793A 2SB 794 2SB 795 fé 2SB 798 2SB 799 . B S b a B H 2SB1119 2SB1122 2SAI 416 m B « 2SB1122 2SB1122 2SA1416 2SA1416 2SA1416 2SA1418 2SB 813 2SB 814 . 2SB 815 2SB 816 _ 2SB 817 ✓ 2SB 818

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

y9w marking

Abstract: 2SB751 2SB759A 2SD837 2SB759 2sd837a 2SB751A ULN pnp vc2545 Si PNP Epitaxial Planar Darlington
Contextual Info: PANASONIC INDL/ELEK-CSENI} h ^ y V T S _ 7SC D | bT3 2 flS4 " 7 ^ 3 3 > T L e7 □ □□flat.D □ 2SB751, 2SB751A 2SB751, 2SB751A > ij =i v P N P x UV h Si P N P Epitaxial Planar Darlington JbZ fi'— i-J& jr— i&mi&WtlMtyi f f l / A F Power Amplifier

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SD2458

Abstract: 2SD2436 2SD2434 2SB1600 2SB642 2SB1627 2SD2433 2SD1010 2sB774 transistor HOA1404-2
Contextual Info: • Silicon Small Signal Transistors Package No. S9TST0D Applica­ tion Functions SS Mini Type (D1) f 2SB1462 I 2 SD 22 I 6 S Mini Type (D5) Mini Type (D10) ( 2SB709A I 2 SDI 8 I 9A I 2SD601A (2SB1219/A í 2SB710/A I 2SD1820/A I 2SD602/A 1 2SB1218A T Mini Type New S Type

2SD889

Abstract: 2SB772 KT 185 2SB754 2SB793 2SB751A 2sb764 2sb774 2SB753 2SB757
Contextual Info: - 60 - m n. Ta=25íC, *EP(3Tc=25‘ C SS £ m S ii V’ CBO V’ ceo (V) (V) Ici DC) (A) 2SB751A PA/SW -80 -80 -4 2SB753 PSW/PA -100 -80 -7 2SB754 PSW/PA -50 -50 -7 2SB757 HS PSW/PA/Audio/Reg -40 -40 LF PA -60 LF PA LF PA LF PA 2SB761 2SB76ÎA 2SB762 2SB762A

2SB1013

Abstract: 2S897 2SB1315 2SA1307 2SB1306 2sb631 hitachi 2SB747 2SA1431 1318J 2SB679
Contextual Info: € Type No. it € Manuf. m = SANYO 3? £ TOSHIBA 2SB679 a NEC SL HITACHI M ± ii FUJITSU & T MATSUSHITA 2SB 1286 ^ □ — A 2SB884 2SB 1287 □ — A 2SB1226 2SB 1288 2SB1131 2SA1431 2SB 1 289 fc' T □ — A 2SB920L 2SB753 2SB946 2SB 1290 _ □ — A 2SB1018

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

2SA1286H

Abstract: 30j125 2SA1282AE BC159A PB6013 bc159 LOW-POWER SILICON PNP 2SA1286J 2SA1282AF mps404
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 BC586 BC586 BCF29 BCF29 BCF29R BCF29R BC179A 2SA643 2SA723 2SA723 ~~~~~;j 15 20 25 30 35 40 BC253 BC263 BC159 BC159A BC159A BC419 NA22FH BC200-02 j~~g~~~ MT0412 MMT71 BC309VI BC200G BC259A BC259B BC259 NA12FI

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SA1622

Abstract: 2SA1699 2sa1015 2SA1586 2s8817 2SA1162 2SA1638 2SA1782 2SA1018 2SB1198K
Contextual Info: m £ Type No. 2SA 1614 2SA 1615 , 2SA 1615Z 2SA 1616 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 2SA 1617 16181619 1620 1621 ^ 1622 ' 1623 1624 1625 1626 1628 1629 1630 , 1631 1632 1633 ' 1634 1635 • 1636 1637

STk442-130

Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK