2N16 Search Results

2N718

Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

2N2389

Abstract: 2N2390 2N1711 Texas Instruments TI424
Contextual Info: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711

2N310B

Abstract: 2N2270
Contextual Info: General Transistor Corporation SMALL SIGNAL TRANSISTORS NPN General Purpose Ptol mW VCEO VCER* M 2N718A 2N720A 2N915 2N916 500 500 500 500 2N956 2N2221 2N2221A 2N2222 2N2222A 2N3700 2N1613 2N1711 Typt No. VCE(SAT) hFEO c Ir (MHz) UNMAX (•AI (V) MAX 50*

rca 2n2147

Abstract: 2N2207 2n2183 rca 2N2196 2N2214 2N2161 2N2222A motorola 2N2204 2n2162 2N2200
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 714 BFX69A BFX69A 2N1594 BCW94A 2SC366G 2N1644A 2N2192 2N2192A 2N2192B MPS650 CX904 CX904 2SC943 2SC943 2SC943 KT503B BCW90B BCW90B 2N731 Manufacturer

2N1613L

Contextual Info: 2N1613L Dimensions in mm inches . 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.

2N3810 LCC

Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
Contextual Info: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

2n1671a

Abstract: unijunction transistor
Contextual Info: 2N1671A SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A V o m Ic Pd is s (PULSED) 30 V 450 mW @ Te = 25 0C

Contextual Info: m 2N1671A \ \ SILICON PN UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671A is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications PACKAGE STYLE T-18 MOD MAXIMUM RATINGS 2.0 A lc V (PULSED) 30 V ce P diss 450 mW @ Tc = 25 °C

Contextual Info: m 2N1671 \ \ UNIJUNCTION TRANSISTOR DESCRIPTION: The 2N1671 is a Unijunction Transistor Used in General Purpose Pulse, Timing, Sense and Trigger Applications. PACKAGE STYLE TO-18 MOD MAXIMUM RATINGS 2.0 A lc 30 V ce P diss 450 mW @ Tc = 25 °C Tj -65 °C t o +140 °C

2n1689

Contextual Info: 2N1689 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)200 V(RRM) Max. (V) I(T) Rated Maximum (A)1.0 @Temp. (øC) (Test Condition)25’ I(TSM) Max. (A) @ t(w) (s) (Test Condition) I(GT) Max. (A)1.0m V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current5.0m

2N1603A

Abstract: GE C20C GE C220C Motorola diodes IR-106C1 2N393 2N4171 C222C AEG TO2 MCR106-5
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number 10 S107C2 n07C1 C106C C106C1 C106C3 S106C1 S106C2 n06C1 MCR106-5 IR106C1 :~~g~g~ 15 20 IR106C4 IR106C41 Cl0SC Cl0BC Cl0BC STY3004 2N1603A 2Nl776 ~~~H~~ 25 30 2Nl776B SN503 SNS03 TIC10SC Cl0SCl Cl0SCl Cl0SCl

BOX70

Abstract: 71T2 PT7933 B0221 ESM3000 SS2022 b0220 74T2 Solitron
Contextual Info: POWER SILICON NPN Item Number Part Number Manufacturer Ic Max A (V) fT hFE V(BR)CEO Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) PD Max (W) Toper Max (Oe) Package Style Additional Transistors, (Co nt' d) 5 10 B0221 B0221 B0221 2N1644 HSE912 ST403 B0795

PA6015A

Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219

BC337B

Abstract: m 60 n 03 g10 BC327C
Contextual Info: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N1613 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

Contextual Info: 2N1613 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N1613 is a silicon NPN epitaxial planar transistor designed for small signal general purpose switching applications. MARKING: FULL PART NUMBER TO-39 CASE

2N2856

Abstract: a/TO111
Contextual Info: A P I ELECTRONICS INC ' 00 43 59 2 A P I E L E C T R O N I C S ' INC 5b Ï Ë J 00435^5 0D0DE51 fl 26C 00221 ~T ~33~Dt COLLECTOR CURRENT = 5 AMPS NPN TYPES Device No 2N1616 2N1617 2N1618 2N1702 2N2150 2N2151 2N2657 2N2658 2N2849 2N2849-1 2N2849-2 2N2849-3

2N2222 - to-92

Abstract: 2N2222A TO-92 JC547 2n2222 to92 2N2222 2N3904 TO-92 type JC500, Jc501
Contextual Info: Small Signal Leaded Devices General Purpose and Sw itching Transistors - NPN Types bvceo •c c 3 hFE lc Type Pkg (V (mA) min max (mA) 2N1613 2N1711 2N1893 2N2219 2N2219A 2N2222 2N2222A 2N2297 2N2368 2N2369 2N2369A 2N3019 2N3020 2N3053 2N3904 2N4123 2N4124

Contextual Info: 2N1639 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)34 I(C) Max. (A)10m Absolute Max. Power Diss. (W)80m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)7.0u @V(CBO) (V) (Test Condition)12 h(FE) Min. Current gain. h(FE) Max. Current gain.

Contextual Info: 2N1682 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V)25 I(C) Max. (A) Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: 2N1678 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)120m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)10 h(FE) Min. Current gain.25 h(FE) Max. Current gain.