2SA1211
Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B
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2sa5042n5448bft61td2905+132n937st8700kt214elbcy182sa1211a5t4061a8t4061low-power silicon pnptp5372st8704st823kt209dst8014
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2SA503
Abstract: 3CK90 3CK9 2SA504
Contextual Info: JÍ T O S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A dFI^DTTSSD bbC D IS C R E T E /O P T O 07 22 1 □□□72E1 4 | T - 3 7 “ /s' 2SA503' 2SA504, SILICON PNP EPITAXIAL TYPE (PCT PROCESS) I NDUST R I A L A P PLICATIONS Unit in m m HIGH FREQUENCY AMPLIFIER APPLICATIONS.
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2sa5032sa50480mhz-150ma+5-15ma2sc5032sc5043ck903ck9
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2SA554
Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A
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sa1192sa429gtm2sa4732sa503+152sa5042sa510-1sa625o-92jf2sa638st0-92jb2sa5542sa5842sa5532sa5642sa5252sa5522sa639s2sc519a2sc520a
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2SC503
Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.
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0d0740t80mhz2sc5032sc504+42sa5032sa5042sc503-2sc5042sc503/y
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2SC503
Abstract: 2SC5031 2SC504 2SA503 2SA504
Contextual Info: TOSHIBA {DISCRETE/OPTO} 2SC503 2SC504, 9097250 TOSHIBA SILICON NPN EPITAX IA L TYPE PCT PROCESS 5 6C <D I S C R E T E / O P T O ) 07 4 U 9 Ü 7*"3 5 W 5 ' Unit in mm $9 . 3 9 Ì . 1 A X . HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING. APPLICATIONS.
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2sc50312sc50480mhz2sc503+22sa5032sa504
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2SC875 E
Abstract: 2N5816 2SC875 2N5822 2SB504A 2n5813
Contextual Info: Medium Power Amplifiers and Switches MAXIMUM RATINGS Ic ^CEO Pa mW (A) (V) H,'E POLA RITY CASE 2N5810 2N5811 2N5812 2N5813 2N5814 N P N P N TO-92F TO-92F TO-92F TO-92F TO-92F 625 625 625 625 625 0.75 0.75 0.75 0.75 0.75 25 25 25 25 40 60 60 150 150 60
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2n58102n58112n58122n5813+102n58142n58152n58162n58172n58182n58192sc875 e2sc8752n58222sb504a
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2SC137
Abstract: 2SC306 2SC138 2sc230 2SC458LG C 2SC130 2SC387AGTM 2SC238 2SC309 2SC132
Contextual Info: - 96 - m % T a = 2 5 ^ , * E P Í á T c = 2 5 eC M S 2SC27 € ffl & VcBO VcEO Ice DC) Pc Pc* (V) (V) (A) (W) (W) s± ii HF A 2SC130 S± ii HF A 60 1 1.8 2SC131 ܱ Ü HS SW 40 0.3 0. 35 2SC132 ä± ü HS SW 20 0.3 0.35 2SC134 S± ü HS SW 40 0.3 2SC135
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2sc272sc1302sc1312sc132+132sc1342sc1352sc13630mhzt0-92ff52sc387agtm2sc1372sc3062sc1382sc2302sc458lg c2sc2382sc309
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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2sc498
Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237
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2n6428o-92a2n6714o-237+122n67262n67152n67272n67162sc4982sc8752sa5032sc1175ft5012sa5322sa6062sa708
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25t12z1012z1014z1018+16aa138aa140aa142aa200aa21qaa300tr4311n1525cs1256hgbsf17dd0418db6ab1274 transistor1n34a mplt236sn76
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2sd 5023
Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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-26unf-2ao-48d2sd 5023transistor bc 945+82sc 9012bc 9013transistor bc 8559416atransistor bc345bfy41bcx 388bc 945
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2SA532
Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G
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057-2g1611g1620g1621-2g+161623g1641g1n40011n40021n40041n40052sa532bc109 bc184 bc549bc3172sc734 yms181abc159 82sc876ttp31aml78m06abc357
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2SC557
Abstract: 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC401 2SC402 2SC402A 2SC403 2SC403A 50 50 50 50 50 5 100 100 100 100 100 100 100 180 100 180 2SC403B 50 4 100 320 2SC403C 60 4 100 320 2SC404 2SC405 2SC406 50 25 25 3 50 15 200
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2sc4012sc4022sc402a2sc403+142sc403a2sc403b2sc403c2sc4042sc4052sc4062sc5572sc548kt2002sc4312sc5462sc5162sc5562sc500
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2SA503
Abstract: 2SA504 2SA503-Y 2SA504-Y 2SC504 U800 2SA503-GR 2SC503 2SA504-O Produced by Perfect Crystal Device Technology
Contextual Info: 2sa 503 ;s a 504 2/ U D > P N P I ^ ^ 2 /? ; W B h 5 ^ ^ P C T Ä Ä SILICON PNP EPITAXIAL TRANSISTOR (PCT PROCESS O « « « * « « o High Frequency Amplifier Applications o High Speed Switching Applications 28 C5 03, a t» X l!S08 0 4 t = y ^ M y # ! l | C i l : 0 1 t .
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130mhz2sa503800mw-600ma+92sc5032sc5042sa5042sa503-y2sa504-yu8002sa503-gr2sa504-oproduced by perfect crystal device technology
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2sd 5023
Abstract: bc 9013 bc 9013 g 2SC 9012 2218A cs9012 BC526 transistor BC 945 BC287 Transistor BC345
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE ic (A) VCEO IV) min max 40 35 40 40 40 120 VCE(SAT) max (A) (Vï COMPLE MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1
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13llsdto-392sd 5023bc 9013+8bc 9013 g2sc 90122218acs9012bc526transistor bc 945bc287transistor bc345
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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LS 2027 audio amp
Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
Contextual Info: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3
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ls 2027 audio ampecg transistor replacement guide book free2sb337transistor replacement guide+6980510s95102sb508c248507722n339bc149c
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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my110bz0206z0208z0210+16z0211z0212z0214z0215z0217z0219hep 154 silicon diodezy 406 transistormotorola hep 801hep 154 diodehep r1751triac zd 6072sb337rs5743.3f82zhep 230 pnp
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02bz21s20921sz575902cz2+161s20942n305502cz51s2095a2n371302z24a1mmg75n2ys40mg15n6es422sk150a2sk270amg150n2ys40mg8n6es42mg15g1al2mg75j2ys40mg30g1bl2s2530a
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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