transistor WL 431
Abstract: 2SC522 2SA510 2SC524 2SA51 2SC522-0 WL 431 2SC52 2SC622 28c5
Contextual Info: p c t 2 s c 522 f 7j j £ SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS O 2 s c 524 » « a « * » « « ÌI if I O * ffl INDUSTRIAL APPLICATIONS O o High Frequency Power Amplifier, High Voltage Switching and Regulator Application*. Unit In on 2SA510, 2 S A 5 1 2 t 3 y / M y # P ( c í t ! l í t .
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2sa5102sa5122sc5222sc524+10100mmx100n50mmx50n25nunx25inmxgmmatransistor wl 4312sa512sc522-0wl 4312sc522sc62228c5
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2SA554
Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A
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sa1192sa429gtm2sa4732sa503+152sa5042sa510-1sa625o-92jf2sa638st0-92jb2sa5542sa5842sa5532sa5642sa5252sa5522sa639s2sc519a2sc520a
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Contextual Info: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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pct752sc5102sc512800mw+82sa5102sa5122sc51262sc52sc55ai 012342sa1943-o 2sc52sc510 toshiba
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SC522-M
Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
Contextual Info: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P MS0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M
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ms0801-604032sa499-mmsoeoi-60403ms0902+12sa503sa510-msa512-msc522-m604072sc520asc5222sc512m2sc519am50801sa5122sc520a-m
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2SC510
Abstract: 2SC512 2SA512 2SA51 2SC510 X 2SC510A 2SA510 2SC510-2SC512 2sc510 toshiba
Contextual Info: ~5Í TOSHIBA {DISCRETE/OPTO} 90 97250 TO SHIBA DE 56L <D I S C R E T E / O P T O DDD741A J7^id o 7 2 SC5 1 0 ' i2 S C 5 1 2 i S IL IC O N NPN T R IP L E D IF F U SE D T YPE PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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ddd741a2sc5102sc51239max+945max800mw2sa5102sa5122sa512sc510 x2sc510a2sc510-2sc5122sc510 toshiba
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2SA850
Abstract: 2N2216 2N5400 MOTOROLA 2N3064 2SB646A 25M SOT89 motorola bc450 15J1A LOW-POWER SILICON PNP KT214A
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 -15 20 >= NthAmerSemi NthAmerSemi See Index SGS-Ates Hybrid Semi SGS-Ates Semelab Semelab See Index ~~~~~~ Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Hitachi Ltd Semicoa NthAmerSemi Space Power
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bcy96bcy97bc477bc477vi+15hse174bc477abc477b2n3798atp3798a2sa8502n22162n5400 motorola2n30642sb646a25m sot89motorola bc45015j1alow-power silicon pnpkt214a
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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2n7588p3139bc233asprague 40d+6gex36/7c4274s1766c12712tc236gp149
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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TOSHIBA MG150N2YS40
Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1/sc-70ytf6122sk2381+15ytf8412sk2387ytf4422sk2149ytf613toshiba mg150n2ys40mg75n2ys40mg15n6es42mg150n2ys402sk150atoshiba s2530a2sk270amg8n6es42mg15g1al2mg75j2ys40
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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2SC108A
Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
Contextual Info: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)
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2sc5072sc5942sc5062sc505+102sc5042sc5032sc4982sc109a2sc108a2sc4972sa5032sc5242sb6782sc512
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2SA510
Abstract: 2SA512
Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 2 S A 5 1 2 S A 5 1 2 9097250 TOSHIBA Sh ' DE 1 ^ 7 2 5 0 0007224 SILICON PNP EPIT AXIA L TYPE PCT PROCESS 5b'C (DISCRETE/OPTO) 07224 1 )7 *3 0 -1 5 INDUSTRIAL APPLICATIONS U n i t in m m HIGH FREQUENCY AMPLIFIER APPLICATIONS.
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2SC557
Abstract: 2SC548 kt200 2sc431 2SC403A 2SC546 2sc516 2SC402 2SC556 2sc500
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) 2SC401 2SC402 2SC402A 2SC403 2SC403A 50 50 50 50 50 5 100 100 100 100 100 100 100 180 100 180 2SC403B 50 4 100 320 2SC403C 60 4 100 320 2SC404 2SC405 2SC406 50 25 25 3 50 15 200
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2sc4012sc4022sc402a2sc403+142sc403a2sc403b2sc403c2sc4042sc4052sc4062sc5572sc548kt2002sc4312sc5462sc5162sc5562sc500
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Contextual Info: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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s029747ss9632sb5042t306+52n59832sd5882sd732sc497hd6801v
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mg75n2ys40
Abstract: MG15N6ES42 2SK150A 2sk270a MG150n2ys40 MG8N6ES42 MG15G1AL2 mg75j2ys40 MG30G1BL2 S2530A
Contextual Info: 廃止品種一覧表 [ 10 ] [ 10 ] 廃止品種一覧表 次の品種が廃止品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 廃止品種 1 形 名 02BZ2.2~4.7 代替品種
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02bz21s20921sz575902cz2+161s20942n305502cz51s2095a2n371302z24a1mmg75n2ys40mg15n6es422sk150a2sk270amg150n2ys40mg8n6es42mg15g1al2mg75j2ys40mg30g1bl2s2530a
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-upstk442-130m56730asppac011a+7pac010aupc2581pal005astk413-020aupc2581vecg semiconductors master replacement guidestrs5717
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2SB415
Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~
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4000h2sb4152sb 7102sc1061+72sd5242sb504hd68p012sb5072sa7622sc8272sc1362
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2SA572
Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
Contextual Info: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1
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2sa5012sa5022sa5032sa504+162sa5052sa5062sa5072sa5082sa5092sc8282sa5722sc10062sc6962sc7082sc9842sc708a2sc734 equivalent2sc6802sa518datasheet 2sa564
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2SC510
Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
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2sc51i2sc512i2sc5102sc512+6800mw2sa5102sa5122sc51022sc510-2sc5122sc510 x
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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mg75n2ys40
Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
Contextual Info: 小信号ダイオード SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入
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050106daa1ytf8422sk2387ytf441+152sk2149ytf6132sk2381ytf843ytf442mg75n2ys402n3055 toshibamg150n2ys40tlr103toshiba 2n3055mg15n6es422sk150atoshiba mg150n2ys402sk270as2530a
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10M15
Abstract: 2SC109A 2SC108A 10Q04 2SA504 2SA594 cd 40240 2SC504 2SC505 2SC507
Contextual Info: Powered TO-39 Application 0.75 40-240 45 *5 40-240 200 0.6 300 0.6 60 *6 30-300 2 80 *6 30—240 2 50 0.6 40-240 2 50 0.8 40-240 2 70 0.8 40-240 SW Time TYP. V CE •c f fc1MHz VCB tori tstg tf MHz (V) (A) (pF) (V) (its) (jus) (jus) 1 250 20 10m 2.8 10 0.1
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to-392sc5072sc5942sa594+142sc50620max2sc4972sa4972sc5122sas1210m152sc109a2sc108a10q042sa504cd 402402sc5042sc505
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2SA510
Abstract: transistor 2sa5100 2SC510 2SA512 2SC51 2SA510-R 2SA512-R 2SC512 Produced by Perfect Crystal Device Technology 2sc5
Contextual Info: 2SA 5 2 / U D > P N P I t : ^ 2 / > » j W B h 5 > y 7 >^ P C T Ä Ä SILICON 2S a 5 PNP EPITAXIAL TRANSISTOR (PC T PROCESS) o O s iS flt£E * -i i O if i * 1 INDUSTRIAL APPLICATIONS o High Frequency Power Amplifier, High Voltage Switching and Regulator Applications
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2sc5102sa510pc-800nw2sc512+8sa510transistor 2sa51002sa5122sc512sa510-r2sa512-rproduced by perfect crystal device technology2sc5
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