2SC500 Search Results

C5001 transistor

Abstract: transistor C5001 2SC5001 transistor marking C5001
Contextual Info: 2SC5001 Datasheet NPN 10A 20V Middle Power Transistor lOutline Parameter Value VCEO IC 20V 10A Collector CPT3 Base Emitter 2SC5001 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SA1834 3) Low VCE(sat) VCE(sat)= 0.25V(Max.)

2SC5004

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA804TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5004 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA804TC has built-in two transistors which were developed for UHF. FEATURES • High fT: fT = 5.0 GHz TYP. (@ VCE = 5 V, IC = 5 mA, f = 1 GHz)

transistor zo 607

Abstract: zo 607 MA 2SC5004 2SC5004-T1 NE58219 NE58219-T1 nec 237 521 02 NE582
Contextual Info: DATA SHEET SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

A710

Contextual Info: 2-1 Power Transistors 2-1-3 Transistors for Display Deflection Output Part No. 2SC5002 VCBO VCEO IC Pc V (V) (A) (W) 1500 2SC5124 800 7 80 10 100 Package TO-3PF Fig. No. 1 External Dimensions • No. 1 (TO-3PF) 5.5±0.2 3.45±0.2 ±0.2 5.5 φ 3.3±0.2 3.0

ZO 107 MA

Abstract: 341S
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low

transistor NEC B 617

Abstract: nec. 5.5 473
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5007 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

transistor 1211

Abstract: transistor su 312 transistor zo 109
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC5000

Abstract: C5000
Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2sc5003

Abstract: 2sC5003 transistor
Contextual Info: Inchange Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switching transistor ・Built-in damper diode APPLICATIONS ・Display horizontal deflection output; switching regulator and general purpose

2SC5432-T1

Abstract: 2SC5006 2SC5432
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5006 • Flat-lead 3-pin thin-type ultra super minimold package

2SC5000

Abstract: transistor 2SC5000 AN-503 an503
Contextual Info: TO SH IBA 2SC5000 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5000 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 .-. 03.2 ±0.2 -i Low Collector Saturation Voltage * V/iTì • v v^ü< /_ _j \ — lì A \T ì T a —

transistor 2SC5000

Abstract: 2SC5000 C5000
Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: SILICON TRANSISTOR NE58219 / 2SC5004 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The NE58219 / 2SC5004 is a low supply voltage transistor in millimeters designed for UHF OSC/MIX. It is suitable for a high density surface mount assembly since the

NEC JAPAN

Abstract: ml marking RF NPN POWER TRANSISTOR 2.5 GHZ 2SC5006 2SC5007
Contextual Info: PRELIMINARY DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA831TD NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • 2 different built-in transistors (2SC5006, 2SC5007) • Low noise Q1: NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz

2SC5005

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5005 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5005 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS in millimeters OSC/MIX. It is suitable for a high density surface mount assembly since the

2SC5006

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

2SC5003

Abstract: NPN Transistor VCEO 1200V
Contextual Info: JMnic Product Specification 2SC5003 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・High voltage switching transistor ・Built-in damper diode APPLICATIONS ・Display horizontal deflection output; switching regulator and general purpose

2SC5006

Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range

d217

Abstract: 2SA1834 2SC5001
Contextual Info: Transistors 2SA1834 2SC5001 96-106-B217 (96-193-D217) 292 Transistors Packages 45

2SC5003

Contextual Info: SavantIC Semiconductor Product Specification 2SC5003 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switching transistor ·Built-in damper diode APPLICATIONS ·Display horizontal deflection output; switching regulator and general purpose

2sC5002

Contextual Info: SavantIC Semiconductor Product Specification 2SC5002 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High voltage switching APPLICATIONS ·Display horizontal deflection output; switching regulator general purpose PINNING PIN DESCRIPTION

P14548EJ1V0DS00

Abstract: 2SC5006 3570 1231 NEC k 787
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA801TC NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA801TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band