2SC5000 Search Results

2SC5000

Abstract: C5000
Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

2SC5000

Abstract: transistor 2SC5000 AN-503 an503
Contextual Info: TO SH IBA 2SC5000 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5000 Unit in mm POWER AMPLIFIER APPLICATIONS 10 ±0.3 .-. 03.2 ±0.2 -i Low Collector Saturation Voltage * V/iTì • v v^ü< /_ _j \ — lì A \T ì T a —

transistor 2SC5000

Abstract: 2SC5000 C5000
Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

Contextual Info: TOSHIBA 2SC5000 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE 2SC5000 U nit in mm Low Collector Saturation Voltage : VCE sat = 0.4 v (Max.) (Iß = 5 A) 1 0 Í0 .3 . ¿3.2 ±0.2 2.7±Q.2 m 1.1 0.75 ±0.15 MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC5000 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 SC 5 0 0 Q Unit in mm POWER AMPLIFIER APPLICATIONS • Low Collector Saturation Voltage ^ V q e (sat) = °-4V (Max.) (Iq = 5A) 10 ±0.3 , 1.1 2_-7±< 1.1 0.75 ±0.15 MAXIMUM RATINGS (Ta = 25°C)

2SC5000

Abstract: AN-503 transistor 2SC5000
Contextual Info: TO SH IBA 2SC5000 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5000 Unit in mm 10 ±0.3 . 03.2 ±0.2 -_| j- Low Collector Saturation Voltage ^ •* Vati v v^n< / _j \ — — A 1 \T v \ ^ ^ * /^ T a ——* * *A

2SC5000

Abstract: transistor 2SC5000
Contextual Info: TOSHIBA 2SC5000 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5000 Unit in mm 10 ±0.3 . ^3.2 ±0.2 Low Collector Saturation Voltage • VCE sat = °-4 v (Max.) d e = 5 A) 2.7±Qj MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO

Contextual Info: 2SC5000 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5000 Power Amplifier Applications • Unit: mm Low collector saturation voltage: VCE sat = 0.4 V (max) (IC = 5 A) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

15J102

Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Contextual Info: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228

2SC2625

Abstract: power transistor 2sc2625 datasheet 2SC5000 2SA793 2sc2335 2sc2625 equivalent 2SC1116A 2SC2306 2SC2829 2sb600
Contextual Info: STI Type: 2C5000 Industry Type: 2C5000 V CEO: ICBO ICEX: h FE: IC: V CE: Case Style: STI Type: 2N2453DIE Industry Type: 2C2453 V CEO: 30 ICBO ICEX: h FE: 150 IC: 1.0m V CE: Case Style: STI Type: 2N3807DIE Industry Type: 2C3807 V CEO: 60 ICBO ICEX: h FE: 300

GT45F122

Abstract: TK13A60U GT30F123 2SK4207 GT30J124 IGBT GT30F123 gt30f122 GT30G122 2SC5471 IGBT GT30J124
Contextual Info: 東芝半導体製品総覧表 2009 年 7 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

GT30J124

Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

2SC4793 2sa1837

Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Contextual Info: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y

*45F122

Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
Contextual Info: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

2sc5088 horizontal transistors

Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Contextual Info: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.