2SA50 Search Results

SC522-M

Abstract: 60407 2SC520A 2SA499-M sc522 2SC512M 2SC519A m50801 SA512 2SC520A-M
Contextual Info: 1 .R lrfr O * » » * * ft VcBO m % # m % * m it m % VcEO % « V kbo T a = 25’C ) le Pc & Inui T, MAX (T c= 2512) MIN TYP VCR (V ) MS0801-60403 2 SA499-M F N P M S080I-60403 2SA50Ö-M I 'N P MS0902—60581 2 S A 503-M P N P M S0902—60582 2 S A 5 1 0 -M

2SA509

Abstract: 2sa509 transistor 2SC509 2SA509-Y 2SA509 A RH-18 2SA509-O 2SA509Y 2SA509-0 2SC5091
Contextual Info: 1 •>'J = ! > P N P x ii$ * -> T J H ii 2SA509 CPCT^S SILICON PNP EPITAXIAL TRANSISTOR PCT PROCESS) o & m & w jiig m m U n it in i O Audio Power Amplifier Applications. • 2 S C 5 0 9 i a y / 'j a v # y tcfs: *) •£~t : • 1 W att Amplifier Applications

Contextual Info: J , Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.S.A. 2SA505 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo= -50V (Min.) • Collector-Emitter Saturation VoltagePIN 1. EMITTER

2SA1211

Abstract: A5T4061 A8T4061 LOW-POWER SILICON PNP TP5372 ST8704 st823 BCY18 KT209D ST8014
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 -60 -65 -70 75 -80 85 90 - 95 Y BR CEO hFE (V) V(BR)CEO 5 Manufacturer 2SA504 2N5448 BFT61 BFT61 TD2905 2N937 ST8700 KT214El BCY18 BCY18 2N3527 PN5138 2N5138 2N1255 BC351 BC351A BC351B

2SC495

Abstract: 2SA496 2SC496 2SA505 2SC495 transistor 2SA505-0 2sa505-y 2SA496-0 2SA496-Y 2SA505-R
Contextual Info: 496 2SA 505 A l -/V D y p N P x e ttz/P iifi& h jy y zv iP C T tt ^ S IL IC O N PNP EPITA XIA L TRANSISTOR P C T U n it 35$ PCT I j> -to Produced by Perfect Crystal Device Technology. 134 PROCESS) i n mm 2sa496 2sa505 ELECTRICAL CHARACTERISTICS (Ta = 25 t)

2SA503

Abstract: 3CK90 3CK9 2SA504
Contextual Info: JÍ T O S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A dFI^DTTSSD bbC D IS C R E T E /O P T O 07 22 1 □□□72E1 4 | T - 3 7 “ /s' 2SA503' 2SA504, SILICON PNP EPITAXIAL TYPE (PCT PROCESS) I NDUST R I A L A P PLICATIONS Unit in m m HIGH FREQUENCY AMPLIFIER APPLICATIONS.

NEC 2561

Abstract: NEC 2581 nec 2565 2565 nec 2SC2564 2SC2320 NEC 2562 2581 NEC 2561 nec 2SC237
Contextual Info: - 3 . n SANYO m ±L H IT A C H I □ — h. tt 2SC 2552 ^ 3fC S 2SC3038 2SC2333 ¿5b¿Oi¿ 2SC2738 2SC3968 2SC 2 553 / & 2SC3039 2SC2335 2SC2613 2SC2739 2SC4205 2SC2749 2SC3365 2SC2841 € TO SH IBA 2SC 2 5 5 5 " - ' NEC 2SC 2556-.- tó T 2SA505 2SC2690 2SC 2557

BC558AP

Abstract: TD401 BSX41 ED1802M LOW-POWER SILICON PNP 2N4917 TED1802L TED1802
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 50 55 60 2SA467G•TM·O 2MA5090 2SA509G·TM·O 2SA509G·O ST8705 2SA608NP 2SA608SP 2N4917 2N5374 BSY59 ED1602D TED1802M ED1802M V741 V741 A5T4062 A8T4062 RN4062 ~~~~8~2 65 70 75 80 2N4062 BC558A

2SA1019

Abstract: 2sb641 2SA1115 IR 638 2SB175 2sb1041 2SA1115 F 2sb618a 2SB549 2SB641 r
Contextual Info: - 48 - w. tt s Typ e No. « M anuf. 8 2SB 605 - 2 SB 606 * ± a „ Z # SANYO 2SB764 Ä 2 TOSHIBA m b NEC 2SA505 B ÎL HITACH I 2SA673A ÎL B 2SB 612 a îl 2SB817 B 8 2SB775 2SB686 2SB775 2SB686 - a # a « a s 2SB776 2SB688 2SB688 2SB 619 fè T 2SB816 2SB 620

2SA505

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA505 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -50V (Min.) ·Collector-Emitter Saturation VoltageVCE(sat)= -0.8V (Max.)@ IC= -500mA APPLICATIONS ·Designed for medium power amplifier applications.

2SC495

Abstract: 2sc496 2SA505 DO313
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA 5b D~| TDTTESD 56C <D I S C R E T E / O P T O 07219 □ 0 G 721 ci t 7 - ¿-9 - D 2SA496&#39; 2SA505i SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm 7.9MAX. MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: • Low Collector Saturation Voltage

2SA554

Abstract: 2sa584 2SA553 2SA564 2SA429GTM 2sa525 2SA552 2SA639S 2SC519A 2SC520A
Contextual Info: 1A m % fö <Ta=25^,*EPiäTc=25t; m 2 SA 119 2SA429GTM 2SA473 2SA503 2SA504 2SA510 2SA512 2SA524 2SA553 2SA554 2SA558 2SA559 2SA559A 2SA562TM 2SA564 2SA564A 2SA580 2SA594 2SA6QSKNP 2SA608NP 2SA608SPA 2SA625 2SA638S 2SA639S 2SA656A 2SA657A 2SA658A 2SA6Î3 2SA673A

2SC495

Abstract: 2SC496 2SA505 2SA496 AC46C 2SA496-R 25X25X 2sa496 y
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A <D I S C R E T E / O P T O Th lT~§ T D ci7ESD 00072]!^ t. | 56C 072 19 D 7- ¿-7- 1 3 '2SA496&#39; 2SA505] SILICON PNP EPITAXIAL TYPE PCT PROCESS) Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: ' ' • Low Collector Saturation Voltage

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

C3182N

Abstract: C3888A 2sd 3420 2SC2268 2sc2073-2 EP 1408 3884A 3182N 2SD 388A 2SA855
Contextual Info: •DISCONTINUED ty p e lis t T h e fo llo w in g D evices are d isco n tin u ed as o f J u n e 1994, a n d a re n o lo n g e r a v a ila b le . Please refer o f th e list fo r later device a lte rn a tiv e s . T y p e No. R ecom m end R eplacem ent T ypp Nn

bc 558 equivalent

Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
Contextual Info: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB816

Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
Contextual Info: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3

DTS108

Abstract: L30C DTS103 DTS106 2SC5250 2sd222 UP 130 L10B
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2N1103

Abstract: 2SC167 2SC166 CK26A CI44 BC412 KIS434 NS435 NS436 NS438
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2SA564A-P

Abstract: 2SA640 2SA564 TO-92B 2SC537 2SC644 2SA876H 2N5138 2SA1715 2SC372
Contextual Info: TYPE NO. H M A X IM U M R A TIN G S CASE Pd mW 'c Im A) V CEO (V) min FE V CE(SAT) max •c lm A | V CE (V) max (V) 'c Im A I fT min (MHz) Cob N.F. max max (pF) (dB) _ 2N5138 2N 5172 2N5209 2N5210 2N5219 P IM N N N TO -IO 6 TO-92B T O -92A TO-92A TO -92A

2SC509

Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
Contextual Info: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±

transistor b1154

Abstract: B1154 10PE1 2N2962 2N1103 ASY13-2 GET116 2SC5220 AFY11 ASY12
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,