2SC52 Search Results

2sa1943 toshiba transistor

Contextual Info: 2SA1943 T O S H IB A 2 S A 1 943 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 20.5MAX. • • ^3.3 ±0.2 Complementary to 2SC5200 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage.

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

tr 2sc5200

Abstract: power amplifier 2sc5200 2sa1943 TRANSISTOR TRANSISTOR 2SC5200 tr 2SA1943
Contextual Info: T O SH IB A 2SC5200 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5200 20.5MAX. • • Unit in mm ^3.3 ±0.2 Complementary to 2SA1943 Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

SMD TRANSISTOR MARKING BR

Abstract: 2SC5209 marking RH
Contextual Info: Transistors SMD Type Small Signal Transistor 2SC5209 Features High voltage VCEO=50V. Small package for mounting. High hFE = 600 to 1800. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Emitter-base voltage VEBO

2SC5287

Contextual Info: JMnic Product Specification 2SC5287 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage,high speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SC5297

Contextual Info: Product Specification www.jmnic.com 2SC5297 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

2SC521

Abstract: 2SA658
Contextual Info: AOK Product Specification AOK Semiconductor 2SA658 Silicon PNP Power Transistors DESCRIPTION • W ith T O -3 package • W ide area o f safe operatio n • C om plem ent to type 2SC521 APPLICATIONS • For audio frequency and pow er am plifier applications

Contextual Info: 2SC5277A Ordering number : ENA1075A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5277A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • • Low-noise : NF=0.9dB typ f=1GHz : NF=1.4dB typ (f=1.5GHz)

2sc5299

Abstract: 2SC5299 equivalent DSA00230106 Ultrahigh-Definition CRT Display Horizontal Deflection
Contextual Info: Inchange Semiconductor Product Specification 2SC5299 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PML package ・High breakdown voltage, high reliability. ・High speed APPLICATIONS ・Ultrahigh-definition CRT display ・Horizontal deflection output applications

2SC521

Abstract: 2SA658
Contextual Info: Inchange Semiconductor Product Specification 2SA658 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation ·Complement to type 2SC521 APPLICATIONS ·For audio frequency and power amplifier applications PINNING see Fig.2

2SC5239

Contextual Info: Inchange Semiconductor Product Specification 2SC5239 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

Contextual Info: SMD Type Type SMD Transistors IC Product specification 2SC5212 Features Low collector saturation voltage VCE sat =0.2V typ. High fT fT=180MHz typ. Excellent linearity of dc forward current gain. High collector current ICM=1A. Small package for mounting. Absolute Maximum Ratings Ta = 25

Toshiba transistor A1962

Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

nec 3012

Abstract: NEC 2705 2SC5288 of ic 74112 2SC5289 transistor 2SC5288 2SC5192 2SC5288-T1 74278 Ic 74191
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5288 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5288 is ideal for the driver stage amplifier in 1.9GHz-band digital PACKAGE DRAWING cordless phones DECT, PHS, etc. . 2 5° Embossed tape 8 mm wide.

2sc5271

Contextual Info: SavantIC Semiconductor Product Specification 2SC5271 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package APPLICATIONS ·For resonant switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol

2SC5273

Abstract: DSA003644
Contextual Info: 2SC5273 Silicon NPN Triple Diffused ADE-208-897 Z 1st. Edition Sep. 2000 Application High voltage amplifier Features • High brakedown voltage V(BR)CEO = 1300 V min Outline TO-220AB 1 2 3 1. Base 2. Collector (Flange) 3. Emitter 2SC5273 Absolute Maximum Ratings (Ta = 25°C)

TRANSISTOR marking 489 code

Abstract: pc 817 2SC5218 DSA003641
Contextual Info: 2SC5218 Silicon NPN Epitaxial ADE-208-279A Z 2nd. Edition Mar. 2001 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline

Contextual Info: ~Sb TOSHIBA { D I S C R E T E/ OPT O} 2SC519A 2SC520A 2SC521A 9097250 TOSHIBA 1 ^1^7550 0 0 D 7 LI51 SILICON NPN TRIPLE DIFFUSED TYPE bòC DISCRETE/OPTO) 0 7 <+21 0 f'- 2 3 — 0 ? INDUSTRIAL APPLICATIONS unit in mm POWER AMPLIFIER, POWER SWITCHING APPLICATIONS.

j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

transistor marking LN4

Abstract: transistor zo 607 ZO 607 MA 2SC5227A ITR07966 ITR08202 ITR08203 ITR08204 a1063 A10633
Contextual Info: 2SC5227A Ordering number : ENA1063 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5227A VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • Low-noise : NF=1.0dB typ f=1GHz . High gain : ⏐S21e⏐2=12dB typ (f=1GHz).

Contextual Info: TO SH IB A 2SC5254 <;r s i s TOSHIBA TRANSISTOR i SILICON NPN EPITAXIAL PLANAR TYPE MT V a V VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5dB f=2GHz t High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL

d 5287

Abstract: 2SC5264
Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

2SC5260

Abstract: OS63
Contextual Info: TOSHIBA 2SC5260 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5260 VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.7dB f=2GHz • High Gain : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

VHF-UHF Band Low Noise Amplifier

Abstract: 2SC5256F
Contextual Info: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2lel2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)