2SC516 Search Results

Contextual Info: 2SC5161 Transistors High voltage switching transistor 400V, 2A 2SC5161 !External dimensions (Units : mm) 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 1.5 2.5 0.65±0.1 0.75 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.)

2SC5161

Contextual Info: 2SC5161 Transistors High voltage switching transistor 400V, 2A 2SC5161 zExternal dimensions (Unit : mm) 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 2.5 1.5 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 zFeatures 1) Low VCE(sat). VCE(sat)=0.15V (Typ.) (IC/IB=1A/0.2A)

2SC5168

Abstract: 2SC5168-1 2sc5166 X10-3 05dBc
Contextual Info: 2SC5168 •> U =i > N P N i * y t ’j . T 7 M JU h "7 > fi ^ ^ R S 2SC5188IÌ* - > 'J3 > N P N ie 5 i + '> rJl'?fÌx j.7 7JL' S 7 > ì? 7 i T f f ilt S « U t t S f f lè : u r ì H - S h * % . - p r . t t liÉ iit © 5 t i> ■ f, >5-f > © 'J' K # l- Ì6 l3 ÌÌ* S ;T 6 * .r i,'* ©

Contextual Info: Transistors High Voltage Switching Transistor 400V, 2A 2SC3969/2SC5161 •Fe atu re s 1) ►External dimensions (Units: mm) LOW VcE(sat). VcE(sat) = 0,15V (Typ.) (Ic / Ib = 1A/0.2A) 2) High breakdown voltage. Vceo = 400V 3) Fast switching. tr ^ 1 . 0 fxS

transistor 102

Abstract: 2SC5161
Contextual Info: 2SC5161 Transistors High-Voltage Switching Transistor 400V, 2A 2SC5161 !External dimensions (Units : mm) 6.5±0.2 5.1+0.2 −0.1 2.3+0.2 −0.1 C0.5 2.5 1.5 0.65±0.1 0.75 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.)

R T O BH TRANSISTOR

Abstract: 2SC5168 transistor CR NPN
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.

Contextual Info: Transistors SMD Type Product specification 2SC5161 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low VCE sat . 0.127 max NPN silicon transistor 2.3 +0.1 0.60-0.1 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1

2SC5169

Abstract: X10-3 2sc516
Contextual Info: 2SC5169 > ' =l > N P N X l& 9 a 7 JI/ h 5 > V ^ ÿ « 1 2SC5169IÎ. - > ';= l> N P N It r ii^ - > 7 'Jl' X iT Jt , h 7 > v '7 j i T l f t Î t S « t tr o â < « - ? f c h 7 > v X ÿ 2 f f l* f W Jf iit iL » 5 e > • t. >^-r > « / j ^ ÿ i - K c * a * 3 t T 5 n r t > i ®

2SC516

Abstract: transistor 23 Transistor SMD 028 npn smd 2a TRANSISTOR SMD 1a 9 2SC5161 SMD npn TRANSISTOR 1a 200v
Contextual Info: Transistors SMD Type High Voltage Switching Transistor 2SC5161 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Low VCE sat . 0.127 max NPN silicon transistor 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15 3 .8 0 +0.15

Contextual Info: Transistors High Voltage Switching Transistor 400V, 2A 2SC3969/2SC5161 •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) L O W VcE(sat). 2SC3969 VcE(sat) = 0 .1 5V (Typ.) (Ic / I b = 1 A /0 .2 A ) 2) H ig h b re a k d o w n vo lta g e .

2SC5161

Contextual Info: 2SC5161 Transistors High voltage switching transistor 400V, 2A 2SC5161 !External dimensions (Units : mm) 6.5±0.2 5.1+0.2 −0.1 C0.5 2.3 +0.2 −0.1 1.5 2.5 0.65±0.1 0.75 9.5±0.5 0.5±0.1 0.9 5.5 +0.3 −0.1 1.5±0.3 !Features 1) Low VCE(sat). VCE(sat)=0.15V (Typ.)

2SC5161

Contextual Info: SPICE PARAMETER 2SC5161 by ROHM TR Div. * 2SC5161 NPN BJT model * Date: 2006/12/26 .MODEL 2SC5161 NPN + IS=200.00E-15 + BF=41.022 + VAF=100 + IKF=6.5849 + ISE=200.00E-15 + NE=1.2666 + BR=1.7462 + VAR=100 + IKR=2.5186 + ISC=2.0512E-9 + NC=1.5919 + NK=.91626

Contextual Info: Transistors High Voltage Switching Transistor 400V, 2A 2SC3969/2SC5161 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) L O W VcE(sai). VcE(sat) = 0 .1 5 V (T y p .) (Ic / I b 2SC3969 „•+0,3 — 0,1 = 1A/0.2A) jn+03 70 - 0.1 2) High breakdown voltage.

npn transistors 400V 1A

Abstract: NPN Transistor 1A 400V npn transistor 400V transistor Ic 1A datasheet NPN 400V switching transistor NPN Transistor transistor transistor 236 high voltage fast switching npn transistor NPN Transistor Characteristics
Contextual Info: Transistors High Voltage Switching Transistor 400V, 2A 2SC3969 / 2SC5161 FFeatures 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0µs (IC = 0.8A) FExternal dimensions (Units: mm)

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: RDNITI MPT • CPT F5 • PSD Application MPT CPT F5 PSD lc A VcEO (V) *VcB*VcER -3 2 -1 - 2* - 82—390 P Q R -3 -1 0 0 - -5 0 -1 -2 2* - 82—390 P Q R -3 -5 0 0 - 2SB1184 - -5 0 -3 - - 15 82—390 P Q R -3 -5 0 0 - 2SB1182 - -3 2 -2 - 2* 10 82—390

2SA1927

Abstract: 2SC5168 2SJ40 2SK433 2SC5169 2SA1929
Contextual Info: # High hpE T ransistor with High- Current Resistors Max. rating« Type No. VCBO HT1PI37L RT1P137P RT1N137L LSS Si.PNP.E LSS Si.NPN.E RT1N137P LSS Si,NPN,E # LSS Si.PNP.E Electrical characteristics Bias Bias Application Structure fa -4 0 -4 0 40 40 lc V SBD

2SD947F

Abstract: 2SC4137 2sa1775 transistor 2SB1516 2SD1379 2SB1007 2SB1009 2SB1065 2SB1086 2SB1086A
Contextual Info: Transistors CPT • TO-126 • TO-126FP CPT SC-59 is also available as automated, surface mount type by adding F5 to the part number TO-126FP is a direct mounting type, allowing simple assembly without additional insulator. Package CPT Application TO-126

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

Contextual Info: Transistors Selection Guide by Applications and Functions • Switching Power Transistors (continued) Appli­ cation VcBO VcEO (V) (V) lc VcE (A) (V) (sai) Package (No.) lc (A) Ib tf (i*s) MT3 (D43) (mA) MT4 (D46) TO r 0 -220(a) T 0 2 2 0 E T0-220D N T ype

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

2SC1740 transistor

Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
Contextual Info: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN

2sd1954

Abstract: 2SC5083 DTC144EVA 2SC2030 DTC114YLA 2SC4722 2SD1228M QR DTD123YV 2SC2675 DTB143TS
Contextual Info: I 1 »l i mi l i ATR \ Packaging \ Bulk Container C2 Code hpE \ Basic ordering unit pcs 2,000 8,000 2SA790M AB O 2SA874M PQR 2SA937AM PQRS 2SA937AMLN RS o o O o o o 2SB909M PQR © o 2SB910M PQR © © 2SB911M PQR © o 2S61042M PQR o Q 2SB1044M PQR o o