2SC546 Search Results

2sc5464

Contextual Info: T O SH IB A 2SC5464 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464 V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure, High Gain. • N F = l.ld B , |S 2 ie l 2 = 12dB f= lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

C5466

Abstract: 2SC5466 IC-303
Contextual Info: 2SC5466 東芝トランジスタ シリコンNPN三重拡散プレーナ型 2SC5466 ○ ダイナミックフォーカス用 ○ 高電圧スイッチング用 ○ 高電圧増幅用 • 単位: mm 高耐圧です。: VCEO = 800 V 絶対最大定格 Ta = 25°C

Contextual Info: TOSHIBA 2SC5466 TO SHIBA TRANSISTOR DYNAM IC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5466 Unit in mm HIGH VO LTAGE SWITCHING APPLICATIONS HIGH VO LTAGE AMPLIFIER APPLICATIONS • High Voltage : V ç e O = 800 V MAXIMUM RATINGS Ta = 25°C SYMBOL

Contextual Info: TO SHIBA 2SC5460 TENTATIVE TO SH IBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE L f if i Unit in mm D Y N A M IC FOCUS APPLICATIONS 8.3MAX. HIGH VOLTAGE SW ITCHING APPLICATIONS w r ;n v n i T A n F H ig h a m p iif if r appi 0 3.1 ± 0.1 i r a t id n ç 3:

2SC5462

Abstract: Hitachi DSA001650
Contextual Info: 2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-671 Z 1st. Edition Oct. 1, 1998 Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec(typ.) at fH=64kHz • Isolated package TO–3PFM

Contextual Info: T O SH IB A 2SC5464FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ± 0.05 0.8 ± 0.05 Low Noise Figure, High Gain. N F = l.ldB , |S 2 iel 2 = 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C)

2SC5466

Abstract: C5466
Contextual Info: 2SC5466 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5466 Dynamic Focus Applications High Voltage Switching Applications Unit: mm High Voltage Amplifier Applications • High voltage: VCEO = 800 V Maximum Ratings Tc = 25°C Characteristics Symbol

2SC5465

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V

2SC5460

Contextual Info: TO SH IBA 2SC5460 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5460 HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS • H igh Voltage : V q e O = 800 V MAXIMUM RATINGS Tc = 25°C SYMBOL CHARACTERISTIC

2sc5468

Contextual Info: TO SH IBA TENTATIVE 2SC5468 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5468 VIDEO OUTPUT STAGE IN HIGH RESOLUTION DISPLAY • High Transition Frequency • Low Collector Output Capacitance • High Voltage frp = 400 MHz (Typ.) (VCE = 10 V, Ie = 50 mA)

2SC5460

Contextual Info: TO SH IBA 2SC5460 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5460 HIGH VOLTAGE SWITCHING APPLICATIONS HIGH VOLTAGE AMPLIFIER APPLICATIONS • High Voltage : Vqe O = 800 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC

TOSHIBA MICROWAVE AMPLIFIER

Abstract: 2SC5464FT
Contextual Info: TOSHIBA 2SC5464FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5464FT Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure, High Gain. N F = l.ldB , |S2 ie l2 = 12dB f=lGHz MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

2SC5461

Abstract: Hitachi DSA00493
Contextual Info: 2SC5461 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition December 1997 Target Specification Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec typ. at fH = 64kHz • Isolated package

2SC5463

Contextual Info: 2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications • Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 12dB f = 1 GHz Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol

CBC 337

Abstract: 83 801 2SC5464FT
Contextual Info: 2SC5464FT SPICE2G6 model parameters 20010110 NET LIST .SUBCKT 2SC5464FT CB 2 LWB 2 LWE 4 Cpe 4 Cpb 5 LC 6 CC 1 CBC 1 Q1 6 5 4 + AREA= 1 .MODEL NPN + IS + BF + NF + VAF + IKF + ISE + NE + BR + NR + VAR + IKR + ISC + NC + RB + IRB + RBM + RE + RC + XTB + EG

2SC5465

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 µs max tf = 0.5 µs (max) (IC = 0.08 A)

Hitachi DSA002747

Abstract: 2SC5461
Contextual Info: 2SC5461 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output 3rd. Edition December 1997 Target Specification Features • High breakdown voltage VCBO = 1500 V • High speed switching tf = 0.15 µsec typ. at fH = 64kHz • Isolated package

2SC5465

Contextual Info: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iq = 0.08 A : tr = 0.7 /us (Max.), tf = 0.5 /us (Max.)

Contextual Info: 2SC5465 東芝トランジスタ シリコンNPN三重拡散形 2SC5465 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大

Contextual Info: 2SC5462 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output HITACHI Features • High breakdown voltage VCB0= 1500 V • High speed switching tf = 0.15 |Asec typ. atfH=64kHz • Isolated package TO-3PFM Outline T O -3P FM 1. Base 2. Collector

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V

Contextual Info: 2SC5460 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5460 Dynamic Focus Applications High-Voltage Switching Applications Unit: mm High-Voltage Amplifier Applications • High breakdown voltage: VCEO = 800 V Absolute Maximum Ratings Tc = 25°C Characteristics

2SC5466

Contextual Info: TO SH IBA 2SC5466 TOSHIBA TRANSISTOR DYNAMIC FOCUS APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SC5466 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 10 ±0.3 r HIGH VOLTAGE AMPLIFIER APPLICATIONS o • H igh Voltage ^3.2 ± 0.2 o ~i 2.7±Q 2 o +i in : V q e O = 800 V