2SC5465 Search Results

2SC5465

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V

2SC5465

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 µs max tf = 0.5 µs (max) (IC = 0.08 A)

2SC5465

Contextual Info: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iq = 0.08 A : tr = 0.7 /us (Max.), tf = 0.5 /us (Max.)

Contextual Info: 2SC5465 東芝トランジスタ シリコンNPN三重拡散形 2SC5465 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V

Contextual Info: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR j SILICON NPN TRIPLE DIFFUSED TYPE r * ó . f i *5 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS Excellent Switching Times Iq = 0.08 A : tr = 0.7 /¿s (Max.), tf = 0.5 ;j $ (Max.)

C5465

Abstract: 2SC5465
Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 µs max tf = 0.5 µs (max) (IC = 0.08 A)

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications Unit: mm High Speed DC-DC Converter Applications • Excellent switching times: tr = 0.7 µs max • High collector breakdown voltage: VCEO = 800 V

2SC5465

Abstract: 2sc546 1111N
Contextual Info: TO SH IBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iq = 0.08 A : tr = 0.7 /us (Max.), tf = 0.5 /us (Max.)

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max) (IC = 0.3 A)

Contextual Info: 2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max) (IC = 0.08 A)

2SC5465

Contextual Info: TO SH IBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iq — 0,08 A : tr = 0.7 /us (Max.), tf = 0.5 /us (Max.)

Contextual Info: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS • Excellent Switching Times Iç = 0.08 A

Contextual Info: TOSHIBA 2SC5465 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5465 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING INDUSTRIAL APPLICATIONS APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS Excellent Switching Times Ic=O.08A : tr=0.7/Æ (Max.), tf=0.5^s (Max.)

IGBT GT30F124

Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
Contextual Info: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ

smd transistor h2a

Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Contextual Info: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output

transistor compatible 2SK3569

Abstract: TK12A65D 2SK3569 equivalent tk6a65d equivalent TB-7005 TPCA8019-H TPCA8023-H tk10a60d equivalent TPCA8030-H p 181 Photocoupler
Contextual Info: 2009-3 SYSTEM CATALOG Semiconductors for Power Supplies SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng AC-Input Switching Power Supply Circuits and Recommended New Product Series ● Secondary rectifier 1. Ultra-high-speed N-channel trench MOSFET U-MOSIII-H Series

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

GT30F124

Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

2SA1941 amp circuit

Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
Contextual Info: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including

TK10A60D

Abstract: 4614 mosfet 2sk3911 TB6817WBG TK15A50D TPCA8030-H TCV7102F TB-7005 TPC8A03 CMS19
Contextual Info: システムカタログ 2009-3 システムカタログ 電源用半導体 SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / AC入力スイッチング電源回路と推奨新製品シリーズ ~ ● パワーマネジメント部

2sC5200, 2SA1943

Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
Contextual Info: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000