2SC524 Search Results

2SC5242

Contextual Info: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.

Toshiba transistor A1962

Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

j4313

Abstract: j4313-o c5242 2sc5200 amplifier circuit
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

Contextual Info: Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter TC=25˚C Symbol Collector to 2SC5244 base voltage 2SC5244A Collector to 2SC5244 emitter voltage 2SC5244A Ratings 1500 VCBO 1600

ZO 109

Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
Contextual Info: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter

A1074

Abstract: CE 2711 ITR07991 2SC5245A ITR07984 ITR07986 ITR07987 ITR07988 ITR07990
Contextual Info: 2SC5245A 注文コード No. N A 1 0 7 4 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5245A UHF ~ S バンド低雑音増幅 , 発振用 特長 ・低雑音である：NF=0.9dB typ（f=1GHz）

2SC5244

Abstract: 2SC5244A
Contextual Info: Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 Parameter Collector to 2SC5244 base voltage 2SC5244A Collector to 2SC5244 VCBO

transistor a1962

Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

c5242

Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

C5242 TOSHIBA

Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
Contextual Info: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage

j4313-o

Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.

Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

2SA1962

Abstract: 2SC5242
Contextual Info: AOK Product Specification AOK Semiconductor 2SA1962 S ilicon PNP Power Transistors DESCRIPTION • With TO -3P l package • Complement to type 2SC5242 • High collector voltage: VCEo=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio

Contextual Info: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package

2SC5241

Abstract: 2SC52 416W
Contextual Info: Inchange Semiconductor Product Specification 2SC5241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base

j4313-o

Contextual Info: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • • High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: C I = 17A High Power Dissipation : 130watts High Frequency : 30MHz.

transistor a1962

Abstract: a1962 SA1962 2SA19 2SA1962 2SC5242
Contextual Info: 2SA1962 TO SHIBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 0 3 .2 ± 0 .2 1 5.9 M AX. • • • High Collector Voltage : VCEO——230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier

Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

A1074

Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
Contextual Info: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain

Toshiba transistor A1962

Contextual Info: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.

Contextual Info: 2SA1964 2SC5248 Transistors I High-voltage Switching Audio output amplifier transistor, Stabilized power supply transistor 2SA1964 • F e a tu r e s 1) 2} 3) 4) 5) • A b s o lu te maximum ratings (Ta=25'C) Flat D C current g a in characteristics. H igh breakdow n voltage. (BVceo5 — 160V)

ZO 109

Abstract: zo 107 2SC5247 Hitachi DSA0014
Contextual Info: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector

2SC5241

Abstract: transistor 2SC5241
Contextual Info: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC5241 Case : FTO-220 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

Contextual Info: 2SC5247 Silicon NPN Epitaxial HITACHI Application V H F / U H F wide band am plifier Features • H igh gain bandwidth product fT = 13.5 G H z typ • High gain, low noise figure PG = 17 dB typ, N F = 1.2 dB typ at f = 900 M H z Outline SM PAK 1. Emitter 2. Base