RCA RF TRANSISTOR Search Results

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

2N4933

Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Contextual Info: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as

Narda 904N

Abstract: transistor et 455 sealectro 2N5470 equivalent transistor rf AN3764 Narda Microwave TA7003 WESTINGHOUSE ELECTRIC 0/Narda 904N
Contextual Info: File No. 350 RF P o w e r T r a n s is to rs Solid State Division 2N5470 RCA-2N5470* is an epitaxial silicon n-p-n planar transistor employing the overlay emitter-electrode con­ struction. It is intended for solid-state microwave radiosonde, communications, and S-band telemetry

RCA-40967

Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
Contextual Info: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E

2N1491

Abstract: 2N1492 2N1493 2N1491-2N1493
Contextual Info: File No. 10 RF P o w e r T r a n s is to r s 2N1491 Solid State Division 9N14.Q9 2N1493 RCA-2N1491, 2N1492, and 2N1493 are triple-diffused transistors of the silicon n-p-n type. These transistors are intended for a wide variety of appli­ cations in industrial and military electronic equipment. They are particu­

2n3553

Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
Contextual Info: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

1N5411

Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal

3SK88

Abstract: transistor 3SK88 transistor T2S dual-gate
Contextual Info: NEC M O S FIELD E F F E C T T R A N S I S T O R ELECTRON DEVICE 3SK88 RF A M P . FOR UHF T V TUNER N-CHANNEL SILICON DUAL-GATE M O S FIELD-EFFECT TRANSISTOR DISK MOLD FEATURES P A C K A G E D IM E N S IO N S Un.t : mm • Suitable tor use as R F am plifier in U H F T V tuner.

rca 40290

Abstract: RCA 2N3866 rca 40280 2N5070 60890 2N4932 2n4933 rca 2N5070 2N5913 N4012
Contextual Info: RF Power Transistors A w ide variety o f rf types capable o f h andling a broad range¡of power from hf to m ic ro w a v e frequencies 25, W at 30 MHz to 1 W at 1 GHz , sup- Applications E ie~nm H T ft 7o I T0-60, and TO-72 packages. . l - and S-band radar and telem etry

transistor 3l2

Abstract: 2N5994 Arco 403 118-136 mhz rca 381 transistor rca 632 RCA 431 transistor RCA Power Transistor 4 225
Contextual Info: File No. 453 RF Power Transistors Solid State Division 2N5994 15-W AM and 3 5 -W CW E m itter- Ballasted Overlay Transistor Silicon N-P-N Device fo r 12.5-V A M and 2 8 -V FM Am plifiers in V H F Communications Equipm ent Features: • In 12.5 V AM 118-136 MHz commercial aircraft

MFE201

Abstract: S3H58 MFE201 application notes MFE202 MFE203 dual-gate
Contextual Info: 3 S 2 - 5VZ- N-CHANNEL DUAL-GATE SIUCON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS MFE201 thru MFE203 . . d e p le tio n m o d e dual g a te tra n s is to rs d e s ig n e d fo r VHF a m p lifie r and m ix e r a p p lic a tio n s • MFE201 — VHF A m p lifie r

SMD zener 562

Abstract: CRCW0603 CRCW1206 D10LR hearing aids CRCW0201 CRCW0805 CRCW1206 vishay
Contextual Info: D… /C R CW/ R CA RCWP w w w. v i s h a y. c o m For technical questions, contact ff2aresistors@vishay.com Asia and Americas , ff1resistors@vishay.com (Europe) S e l ector G uide thick film chip resistors resistive products V I S H A Y I N T E R T E C HN O L O G Y , I N C .

1415 Allen bradley

Abstract: ta8750 microstripline 92CS-21568 2N6391 RCA2005 HF-46 HF46 SMFBA1
Contextual Info: File No. 627 RF P o w e r T r a n s is to r s Solid State Division RCA2005 2N6391 5-W, 2-GHz, Em itter-Ballasted Silicon N-P-N Overlay Transistors Fo r Use in Microwave Power A m plifiers, Fundamental-Frequency Oscillators, and Frequency M ultipliers Features:

sx3704

Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
Contextual Info: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are

2N6105

Abstract: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 2N6104 RCA 431 transistor
Contextual Info: File No. 504 RF Power Transistors Solid State Division 2N6104 2N6105 30-W 4 0 0 - MHz Broadband E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors 2N 6105 J E D E C T O -2 1 6 A A Features: • ■ ■ ■ ■ 5-dB gain min. at 400 MHz with 30 watts (min.) output

d 331 TRANSISTOR equivalent

Abstract: RCA-40934 rca transistor rca 40934 RCA 40934 transistor 100 watt hf transistor 12 volt 7470 ic 300 watt hf transistor 12 volt VK20009-3B 40934
Contextual Info: File No. 550 n U fB /T n RF Pow er Transistors Solid State Division 40934 High-Pow er Silicon N -P -N V H F /U H F Transistor 1 2 .5 -V o lt T y p e F o r Class C A m p lifie r A pp licatio n s Features: • Low-inductance radial leads — particularly useful for stripttne circuits

Contextual Info: m jm m R F P r e v e is M ic r o s m e m i 140 Cormneree Drive Montgomeryville, PA 18936-1013 Te : {21$} 631-9840 SD1420 RF & MICROWAVE TRANSISTORS 860-960MHz CLASS AB BASE STATÍON » FREQUENCY S60-960MH2 « p Q w tR o u r s .iw « VGLTAGE 24V « POWER GASíSi

CD4069UBE harris

Contextual Info: P17E14.pdf 04.8.24 !Note Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this PDF catalog to prevent smoking and/or burning, etc. This catalog has only typical specifications. Therefore, you are requested to approve our product specifications or to transact the approval sheet for product specificaions before ordering.

RN112BPC

Abstract: TPA6120A2 rca video schematic RR1220P49R9B P10343 RN-112BPC SC1123
Contextual Info: TPA6120A2 Evaluation Module User’s Guide May 2004 HPA Audio Power SLOU169 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

nytronics wee wee 150

Abstract: 2N5918 rca 448 rca 632 i437 10W Power Amplifier RCA rf power transistor VHF transistor amplifier circuit Nytronics rfc rca rf overlay transistor
Contextual Info: File No. 448 DGGBÆI RF Power Transistors Solid State Division 2N5918 10-W, 4 0 0 -M H z High-Gain Silicon N-P-N E m itter-B allasted O verlay T ran sisto r For V H F /U H F Communications Equipm ent Features • ■ ■ ■ ■ ■ 10 W output at 400 MHz 8dB min. gain

2N5915

Abstract: 2N5914 VK20009-3B VK200093B ta7409 rca 632 rca power transistor 14-150 pf 424 VK200-093B C3097
Contextual Info: File No. 424 rotBÆ Solid State RF Pow er Transisto rs Division 2N5914 2N5915 H ig h -P o w er Silicon N -P -N O verlay Transistors 12.E>-Volt, High-Pow er T yp es F o r Class-C A m p lifie rs in