Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    PHYSICS Search Results

    PHYSICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DP83TC811SWRNDRQ1
    Texas Instruments Low-power automotive PHY 100BASE-T1 Ethernet physical layer transceiver 36-VQFNP -40 to 125 Visit Texas Instruments
    DP83TC811SWRNDTQ1
    Texas Instruments Low-power automotive PHY 100BASE-T1 Ethernet physical layer transceiver 36-VQFNP -40 to 125 Visit Texas Instruments Buy
    TSB41BA3DIPFP
    Texas Instruments S400 Capable 1394b Physical Layer (Phy) 80-HTQFP -40 to 85 Visit Texas Instruments Buy
    TPIC1021DR
    Texas Instruments Automotive LIN physical interface 8-SOIC -40 to 125 Visit Texas Instruments Buy
    TSB41BA3DPFP
    Texas Instruments S400 Capable 1394b Physical Layer (Phy) 80-HTQFP 0 to 70 Visit Texas Instruments Buy
    SF Impression Pixel

    PHYSICS Price and Stock

    SICK AG

    SICK AG MPB10-VS00VSIQ00 MULTIPHYSICSBOX

    CONDITION MONITORING SENSOR, VIBRATION, IO-LINK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS MPB10-VS00VSIQ00 MULTIPHYSICSBOX Bulk 2 2 Weeks 1
    • 1 $509.60
    • 10 $509.60
    • 100 $509.60
    • 1000 $509.60
    • 10000 $509.60
    Buy Now

    PHYSICS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    rubidium

    Abstract: 25-E11
    Contextual Info: Overview The Datum 8040 Rubidium Frequency Standard is a high performance 10MHz frequency standard in a 1U high, 19 inch rack mount plug and play package. Based on many years of refinement, the Datum 8040 rubidium physics package is a design that offers high reliability supported by tens of thousands of fielded units.


    Original
    10mhz100dbrubidium25-e11 PDF

    Contextual Info: Standard-Hybrid-Circuits Charge Sensitive Preamplifier Type 559-064 The module 559-064 contains a low noise charge sensitive preamplifier designed for nuclear physics applications. The amplifier is optimized for extremely low noise vol­ tages and currents within a range of detector capacities CDfrom 20 pF to 150pF. With


    OCR Scan
    150pf16pin PDF

    AN829 "cross reference"

    Abstract: AN-829
    Contextual Info: THE PHYSICS OF THE BACKPLANE BUS For high-speed bus signals where the signal rise and fall times are less than the round-trip delay, the bus acts as a transmission line with an associated characteristic impedance and propagation delay whose unloaded values, Zo and


    Original
    an011457-1an011457an829 "cross referencean-829 PDF

    Cu6Sn5

    Abstract: Cu6Sn5 surface energy sem 2006 IPACK2005
    Contextual Info: APPLIED PHYSICS LETTERS 88, 012106 ͑2006͒ Effect of current crowding on void propagation at the interface between intermetallic compound and solder in flip chip solder joints Lingyun Zhang,a͒ Shengquan Ou, Joanne Huang, and K. N. Tu Department of Materials Science and Engineering, University of California, Los Angeles,


    Original
    cu6sn5cu6sn5 surface energysem 2006ipack2005 PDF

    OPA03

    Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
    Contextual Info: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


    Original
    opa03dmill65260 npnnv sram cross reference+6sun sensorbgp01hep 50hep silicon diodescr spice modelsmall electronics projects PDF

    E678-14T

    Abstract: E2624 R7056 photomultiplier tube Hamamatsu Photomultiplier Socket 14 Pin R7056 pmt E2624 SHV CONNECTOR r642 RG-174 bnc E678-14C
    Contextual Info: PHOTOMULTIPLIER TUBES R6427, R7056 Fast time response, For scintillation counting and high energy physics, R6427: Borosilicate glass, R7056: UV glass GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area


    Original
    r6427r705614-pine678-14c+10se-171-41tpmh1187e04e678-14te2624r7056 photomultiplier tubehamamatsu photomultiplier socket 14 pinpmt e2624shv connectorr642rg-174 bnc PDF

    R580

    Abstract: DY10 TPMHB0204EA
    Contextual Info: PHOTOMULTlPLlER TUBE R580 For Scintillation Counting and High Energy Physics 38mm 1-1/2 lnch Diameter, 10–stage, Bialkali Photocathode, Head–On Type GENERAL Description/Value 300 to 650 420 Bialkali 34 Borosilicate glass Linear focused 10 3 7 JEDEC No.B12–43


    Original
    se-171-41tpmh1100e02r580dy10+1tpmhb0204ea PDF

    R5912

    Abstract: Hamamatsu Photomultiplier Socket 14 Pin B20-102 transit dy7 TPMH1235E01 ic 741 datasheet photomultiplier
    Contextual Info: PHOTOMULTIPLIER TUBE R5912 APPLICATIONS For High Energy Physics GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Effective Area Window Material Structure Dynode Number of Stages Direct Interelectrode Anode to Last Dynode


    Original
    r591220-pinb20-102e678-20a+82856k420nms-164-40tpmh1235e01hamamatsu photomultiplier socket 14 pintransit dy7ic 741 datasheetphotomultiplier PDF

    CH1024

    Abstract: Redel
    Contextual Info: REDEL Scale 1:1 ® INTRODUCTION / EINFÜHRUNG The REDEL D is an extremely small fibre optic connector which is ideal for use in very confined areas. It uses materials which are compatible with radioactive environments. Its low mass makes it an ideal choice for avionics use, in particle physics research,


    Original
    ch-1024r0100201ch1024redel PDF

    S3590

    Abstract: Spectra Physics A35 diode L2656 noise source diode equivalent circuit diagram of led
    Contextual Info: typeset using JPSJ.sty <ver.0.7d> Dependence of an LED Noise on Current Source Impedance Takasi EndoÉ, Eitaro Morimoto1 , Yutaka Hirayoshi1 and Kouich Toyoshima Faculty of Liberal Arts, Saga University, Saga 840 1 Department of Physics, Saga University, Saga 840


    Original
    s3590spectra physicsa35 diodel2656+2noise source diodeequivalent circuit diagram of led PDF

    DSO90000A-807

    Abstract: Signal-to-noise ratio matlab Source code for pulse width modulation in matlab E2655B Logitech mouse rf N5452A LOGITECH WIRELESS KEYBOARD MOUSE MIPI spec wimax matlab touchscreen mipi
    Contextual Info: Agilent Technologies DSO90008 Series low-profile high-performance oscilloscopes/digitizers Data Sheet Engineered for research at the cutting edge of modern physics Monitors optional Low-profile oscilloscopes/digitizers DSO90808A: 8-bit, 8 ch, 8GHz, 40 GS/s


    Original
    dso90008dso90808adso91208a12ghz+13dso91308a13ghz5990-4716endso90000a-807signal-to-noise ratio matlabsource code for pulse width modulation in matlabe2655blogitech mouse rfn5452alogitech wireless keyboard mousemipi specwimax matlabtouchscreen mipi PDF

    LED top layer reflector

    Abstract: telefunken diodes SI 61 L 565nm led detector 650nm Receivers lattice LM 45 diode SI 61 L telefunken
    Contextual Info: Vishay Telefunken Physics of Optoelectronic Devices Light-Emitting Diodes This section deals with the principles and characteristics of the technically most important types of visible emitters which are formed, without special lateral structures, as whole-area emitters.


    Original
    led top layer reflectortelefunken diodes si 61 l565nm led detector650nm receivers+2lattice lm 45diode si 61 l telefunken PDF

    Contextual Info: APPLIED PHYSICS LETTERS 104, 032901 2014 Analytical solution for capacitance calculation of a curved patch capacitor that conforms to the curvature of a homogeneous cylindrical dielectric rod Tianming Chen,1 John R. Bowler,2 and Nicola Bowler3 1 Skyworks Solutions, Inc., Cedar Rapids, Iowa 52411, USA


    Original
    PDF

    Hamamatsu Photomultiplier Socket 14 Pin

    Contextual Info: PHOTOMULTIPLIER TUBE R3998-02 For High Energy Physics and Scintillation Counting, 28mm 1–1/8 Inch Diameter, Low Profile, Bialkali Photocathode, 9–Stage, Head–On Type GENERAL Parameter Spectral Response Wavelength of Maximum Response MateriaI Photocathode


    Original
    r3998-0214-pine678-14cse-164+3tpmh1150e02b1201hamamatsu photomultiplier socket 14 pin PDF

    Hamamatsu Photomultiplier Socket 14 Pin

    Abstract: E678-14C DY10 R7057
    Contextual Info: PHOTOMULTIPLIER TUBE R7057 Fast Time Response, For High Energy Physics and Scintillation Counting Especially for BaF2 Scintillator GENERAL Parameter Spectral Response Wavelength of Maximum Response Material Photocathode Minimum Effective Area Window Material


    Original
    r705714-pine678-14cse-171-41+3tpmh1188e03hamamatsu photomultiplier socket 14 pindy10 PDF

    Indium Tac Flux 020

    Abstract: CU-106A CU-106A shelf life of BGAS DALE SOMC k type thermocouple utl USR(pet) gold embrittlement
    Contextual Info: APPENDIX A Surface Tension and the Self-Centering of BGAs ITS PHYSICS ARE REVIEWED T O G E TH E R W I T H SOLDER TYPE, TEM PERATURE A N D THE PRESENCE OF C O N T A M I N A T E S A N D H O W THEY IN F LU E N C E By Steve G r e a t h o u s e THE S E L F - A L I G N I N G M O V E M E N T OF DEVICES D U R I N G


    OCR Scan
    indium tac flux 020cu-106acu-106a shelf lifeof bgas+4dale somck type thermocouple utlusr(petgold embrittlement PDF

    photodiode ge

    Abstract: TSAL6200 TSFF5410 TSHA550 TSHF5410 TSUS540 detect radiation
    Contextual Info: Physics and Technology Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors consist of two or more different elements of group three (e.g.,


    Original
    26-aug-08photodiode getsal6200tsff5410+4tsha550tshf5410tsus540detect radiation PDF

    LT1677 equivalent

    Abstract: input resistance op amp LT1028 LTC6078 design ideas LT1677 Low Noise Op Amps equivalent LT1055 LT1122 LT1490
    Contextual Info: DESIGN IDEAS Op Amp Selection Guide for Optimum Noise Performance by Glen Brisebois Introduction Linear Technology continues to add to its portfolio of low noise op amps. This is not because the physics of noise has changed, but because low noise specifications are being combined


    Original
    i1567lt1028lt6230lt6200+14lt6233lt1215lt1211t1215lt1213lt1677 equivalentinput resistance op ampltc6078design ideaslt1677low noise op amps equivalentlt1055lt1122lt1490 PDF

    Physics and Technology

    Abstract: physics pn junction diode structure
    Contextual Info: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original
    06-oct-14physics and technologyphysicspn junction diode structure PDF

    ML-868

    Abstract: ML86 light class tenth fell laser RCA Solid State power devices manual blue light PHOTOdetector paper flash lamp laser
    Contextual Info: Laser Speed Of Light/ Receiver Kit Laser Energy In Application An Application-Oriented Activity Using a Laser to Measure the Speed of Light • For Technology Education • • For Applied Physics For Science Classes INDUSTRIAL FIBER OPTICS * Copyright 2010


    Original
    ml-868ml86light class tenthfell laser+3rca solid state power devices manualblue light photodetector paperflash lamp laser PDF

    HP5082-2835

    Abstract: MP7683 MP7683JN MP7683JQ MP7683JS MP7683KN MP7683KQ MP7683KS MP7683SD
    Contextual Info: MP7683 CMOS, 8-Bit High Speed Analog-to-Digital Converter March 1998-3 APPLICATIONS FEATURES High Speed Low Power A/D Conversion Satellite Operations High Energy Physics Research Portable Products Radar Pulse Analysis ^iP Data Acquisition Systems • • •


    OCR Scan
    mp7683100mw3452blfldq07777+8hp5082-2835mp7683jnmp7683jqmp7683jsmp7683knmp7683kqmp7683ksmp7683sd PDF

    Bipolar Junction Transistor

    Abstract: 414 rf transistor AT-420
    Contextual Info: RF and Microwave Silicon Bipolar␣ Transistors Characteristics The silicon bipolar transistor is a semiconductor device, with amplification due to current gain. The advantages silicon bipolar transistors have over other transistor types include mature technology both in the understanding of the device physics and


    Original
    at-640at-414/415at-420bipolar junction transistor+1414 rf transistor PDF

    Contextual Info: T. J. RODGERS PRESIDENT, CHIEF EXECUTIVE OFFICER, AND DIRECTOR T.J. Rodgers is founder, president, CEO, and a director of Cypress Semiconductor Corporation. He was a Sloan scholar at Dartmouth College, where he graduated as Salutatorian with a double major in physics and chemistry. Rodgers attended Stanford


    Original
    PDF

    SLOAN COMPANY

    Contextual Info: T. J. RODGERS PRESIDENT, CHIEF EXECUTIVE OFFICER AND DIRECTOR T.J. Rodgers is founder, president, CEO, and director of Cypress Semiconductor Corporation. He was a Sloan scholar at Dartmouth College, where he graduated as Salutatorian with a double major in physics and chemistry. Rodgers attended Stanford


    Original
    sloan company PDF