TSFF5410 Search Results
TSFF5410 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSFF5410 | Vishay Siliconix | Infrared emitting diodes | Original | 128.43KB | 5 |
TSFF5410 Price and Stock
Vishay Intertechnologies TSFF5410IR transmitter; 5mm; T-1 3/4; 870nm; transparent; 50mW; 22°; THT |
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TSFF5410 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm |
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tsff54102002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
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tsff5410d-7402513-apr-04 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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tsff54102002/95/ec2002/96/ec2011/65/eu+1 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff5410d-7402504-may-04 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff5410d-7402503-jun-04 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
tsff54102002/95/ec2002/96/ec2011/65/eu+2 | |
TSFF5410Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : ∅ 5 • Leads with stand-off • Peak wavelength: λp = 870 nm |
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tsff541018-jul-08 | |
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Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff541008-apr-05 | |
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Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
Original |
tsff54102002/95/ec2002/96/ec11-mar-11 | |
TSFF5410Contextual Info: TSFF5410 VISHAY Vishay Semiconductors High Speed IR Emitting Diode in ∅ 5 mm T-1¾ Package Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff5410d-7402523-jun-04 | |
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Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff54102002/95/es08-apr-05 | |
21142
Abstract: TSFF5410
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tsff54102002/95/ec2002/96/ec18-jul-08+1 | |
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Contextual Info: TSFF5410 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5410 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero DH technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant |
Original |
tsff54102002/9s08-apr-05 | |
TSFF5410Contextual Info: TSFF5410 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES 94 8390 • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: p = 870 nm |
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tsff54102002/95/etrademarks2011/65/eu2002/95/ec+1 | |
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TSSP4038Contextual Info: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2 |
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vmn-ms6520-1311tssp4038 | |
A 69157 scr
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
photodiode ge
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26-aug-08photodiode getsal6200tsff5410+4 | |
Physics and Technology
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06-oct-14physics and technologyphysicspn junction diode structure | |
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
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Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
diode SR 360
Abstract: IEC 62471 60825-1 IEC-60825 diode sr 60 IEC62471 DIN 875 VSLB3940X01 IEC 60825-1 diode SR 360 datasheet
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11-sep-08diode sr 360iec 6247160825-1+7 | |
751-1201-ND
Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND
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751-1003-nd751-1004-nd751-1023-nd751-1041-nd+16 | |