BPV11F Search Results
BPV11F Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BPV11F | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 91.41KB | 6 | ||
| BPV11F | Vishay Semiconductors | Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANS NPN 5MM IR 70V | Original | 5 | |||
| BPV11F | Vishay Telefunken | Phototransistor, 1nA Dark Current, 930nm Wavelength | Original | 128.09KB | 6 | ||
| BPV11F | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 |
BPV11F Price and Stock
Vishay Intertechnologies BPV11FNo Phototransistor Chip Silicon 930nm 2-Pin T-1 3/4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11F | 3,386 | 114 |
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| BPV11F | 835 | 20 |
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| BPV11F | 146 | 18 |
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BPV11F | Bulk | 6 Weeks | 2,000 |
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BPV11F | 835 | 6 Weeks | 1 |
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| BPV11F | 146 | 6 Weeks | 1 |
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BPV11F | Bulk | 11,256 | 1 |
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| BPV11F | Bulk | 4 | 1 |
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BPV11F | Tube | 2,000 |
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BPV11F | 72 |
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BPV11F | 3,389 | 1 |
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BPV11F | 18,000 |
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BPV11F | 26 |
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BPV11F | 2,000 | 7 Weeks | 2,000 |
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Vishay Intertechnologies BPV11FSPHOTO TRANS. 5MM 15DEG FILTR-e4 - Bulk (Alt: BPV11FS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11FS | Bulk | 2,000 |
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Vishay Siliconix BPV11F30 DEG IR PHOTOTRANSISTOR, THROUGH HOLE 2-PIN 5MM (T-1 3/4) PACKAGE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11F | Bulk | 1,861 | 3 Weeks | 1 |
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Temic Semiconductors BPV11FSPhototransistor IR Chip Silicon 930nm 2-Pin T-1 3/4 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11FS | 900 |
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BPV11F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
bpv11f2002/95/ec2002/96/ec2011/65/eu+1 | |
BPV11F
Abstract: IC AN 8249
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Original |
bpv11f900nmd-7402520-may-99+1 | |
8253CContextual Info: Temic BPV11F S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T - H i plastic pack age. The epoxy package itself is an IR filter, spectrally |
OCR Scan |
bpv11f900nm16-ocr-9616-oct-+2 | |
BPV11F
Abstract: an 8249
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Original |
bpv11fd-7402526-mar-04an 8249 | |
BPV11F
Abstract: 8239 BPV11 Vishay Telefunken Phototransistor
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Original |
bpv11f900nmd-7402520-may-99+3 | |
BPV11FContextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p |
Original |
bpv11f900nmd-7402520-may-99 | |
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Contextual Info: BPV11F www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
bpv11f2002/95/ec2011/65/eujs709a+1 | |
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Contextual Info: BPV11F VlSfrlAY Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13A plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters X p ^ 900nm . |
OCR Scan |
bpv11f900nm20-may-99 | |
BPV11FContextual Info: BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p 900nm . |
Original |
bpv11f900nmd-7402516-oct-96 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
Original |
bpv11f08-apr-05 | |
BPV11F
Abstract: 035R
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Original |
bpv11f2002/95/ec2002/96/ec18-jul-08+1 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
Original |
bpv11fd-7402508-mar-05 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p |
Original |
bpv11f900nmd-7402520-may-99 | |
BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters λ p ≥ 900 nm . |
Original |
bpv11f08-apr-05 | |
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BPV11FContextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
bpv11f2002/95/ec2002/96/ec11-mar-11 | |
BPW84
Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
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OCR Scan |
bpv11bpw96abpw96bbpw96c+13 | |
A 69157 scr
Abstract: 65k5 HEDS 5300 HCPL-900J-000E HCPL 0636 DT 8210 IC hcpl788 hcpl 1360 HEDS 8210 83K3
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90f8548sdp8600-00195f5325sdp8371-001+16 | |
schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
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p462-ndp463-ndlng295lfcp2ulng395mftp5u+11 | |
mdd 2605
Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
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element-14element14mdd 2605hcpl 1458 8 pin opto+8 | |
c1g smd
Abstract: bpv10nf TEMD2100
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OCR Scan |
cqy36ncqy37ntsus4300tsus4400+9 | |
BPW 64 photo
Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
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OCR Scan |
bpw16nbpw17nbpw85cbpw96c+14 | |
tept5600 response time
Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
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emit4-9337-2920vsa-sg0041-0512tept5600 response timeapplication notes tsal4400+8 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810leader 8020 schematics oscilloscopesmd diode schottky code marking gwsn 16848+7 | |
751-1201-ND
Abstract: BPW21R 751-1001-ND 751-1213-ND 751-1013-ND 751-1002-ND BPW41N BPW77NA 751-1015-ND 751-1043-1-ND
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751-1003-nd751-1004-nd751-1023-nd751-1041-nd+16 | |