BPV11 Search Results
BPV11 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| BPV11 | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 90.81KB | 6 | ||
| BPV11 | Vishay Semiconductors | Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANS NPN 5MM CLEAR LENS | Original | 5 | |||
| BPV11 | Vishay Telefunken | Phototransistor Module, 1nA Dark Current, 850nm Wavelength | Original | 127.42KB | 6 | ||
| BPV11 | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 | ||
| BPV11F | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 91.41KB | 6 | ||
| BPV11F | Vishay Semiconductors | Optical Sensors - Phototransistors, Sensors, Transducers, PHOTOTRANS NPN 5MM IR 70V | Original | 5 | |||
| BPV11F | Vishay Telefunken | Phototransistor, 1nA Dark Current, 930nm Wavelength | Original | 128.09KB | 6 | ||
| BPV11F | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 |
BPV11 Price and Stock
Vishay Intertechnologies BPV11FPhototransistor; THT; 5mm; λp max: 950nm; 70V; 30° |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11F | 3,361 | 1 |
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BPV11F | 4,000 | 2,000 |
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| BPV11F | 3,361 | 113 |
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| BPV11F | 835 | 20 |
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| BPV11F | 146 | 18 |
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BPV11F | Bulk | 6 Weeks | 2,000 |
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BPV11F | 1,734 |
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BPV11F | 4,000 | 6 Weeks | 2,000 |
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| BPV11F | 835 | 6 Weeks | 1 |
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| BPV11F | 146 | 6 Weeks | 1 |
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BPV11F | Bulk | 9,252 | 1 |
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| BPV11F | Bulk | 4 | 1 |
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BPV11F | Tube | 2,000 |
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BPV11F | 72 |
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BPV11F | 18,000 |
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BPV11F | 26 |
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BPV11F | 2,000 | 7 Weeks | 2,000 |
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Vishay Intertechnologies BPV11Phototransistor; THT; 5mm; λp max: 850nm; 70V; 30° |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11 | 1,961 | 1 |
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BPV11 | 2,000 | 2,000 |
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| BPV11 | 1,961 | 87 |
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BPV11 | Bulk | 2,000 |
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| BPV11 | Bulk | 6 Weeks | 2,000 |
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BPV11 | 2,435 |
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BPV11 | 2,000 | 6 Weeks | 2,000 |
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BPV11 | Bulk | 1,000 | 1 |
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| BPV11 | Bulk | 552 | 1 |
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BPV11 | Bulk | 6 Weeks | 2,000 |
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BPV11 | 2,480 |
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BPV11 | Bulk | 4,000 | 2,000 |
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BPV11 | 8 Weeks | 2,000 |
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BPV11 | 7 Weeks | 2,000 |
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Vishay Intertechnologies BPV11FSPHOTO TRANS. 5MM 15DEG FILTR-e4 - Bulk (Alt: BPV11FS) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11FS | Bulk | 2,000 |
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Vishay Siliconix BPV11F30 DEG IR PHOTOTRANSISTOR, THROUGH HOLE 2-PIN 5MM (T-1 3/4) PACKAGE |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPV11F | Bulk | 1,861 | 3 Weeks | 1 |
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Struthers-Dunn 219DXBPV-115/125VDCINDUSTRIAL GENERAL-PURPOSE RELAY, 115/125V DC, 10A, 4PST-NO + DPST-NC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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219DXBPV-115/125VDC | Bulk | 8 Weeks | 1 |
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BPV11 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: BPV11F Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
bpv11f2002/95/ec2002/96/ec2011/65/eu+1 | |
BPV11F
Abstract: IC AN 8249
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Original |
bpv11f900nmd-7402520-may-99+1 | |
BPW20RF
Abstract: BPW34 osram phototransistor application lux meter BPW41 BPW34 application note BPW20RF application BPW41N IR DATA wi41g
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Original |
bpv112002/95/ec2002/96/ec2011/65/eu+10 | |
Vishay Telefunken Phototransistor
Abstract: BPV11
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Original |
bpv11d-7402520-may-99vishay telefunken phototransistor | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
bpv112002/95/ec2002/96/ec08-apr-05 | |
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Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpv112002/95/ec2002/96/ec2011/65/eu+1 | |
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Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpv112002/95/ec2002/96/ec2011/65/eu+1 | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpv112002/95/ec2002/96/ec11-mar-11 | |
8253CContextual Info: Temic BPV11F S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B P V U F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T - H i plastic pack age. The epoxy package itself is an IR filter, spectrally |
OCR Scan |
bpv11f900nm16-ocr-9616-oct-+2 | |
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Contextual Info: BPV11 Vishay Telefunken Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
bpv11d-7402520-may-99 | |
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Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpv112002/95/ec2002/96/ec11-mar-11 | |
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Contextual Info: BPV11 www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
bpv112002/95/ec2011/65/eujs709a+1 | |
ic 8253
Abstract: BPV11
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Original |
bpv11d-7402516-oct-96ic 8253 | |
BPV11F
Abstract: an 8249
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Original |
bpv11fd-7402526-mar-04an 8249 | |
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BPV11FContextual Info: BPV11F Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p |
Original |
bpv11f900nmd-7402520-may-99 | |
BPV11
Abstract: ic 8272 ic 8250
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Original |
bpv11d-7402520-may-99ic 8272+1 | |
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Contextual Info: BPV11F www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times |
Original |
bpv11f2002/95/ec2011/65/eujs709a+1 | |
BPV11Contextual Info: TELEFUNKEN Semiconductors BPV 11 Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
bpv11d-74025 | |
BPV11
Abstract: 8239 8249 an 8249 ic 8253
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Original |
bpv11d-7402508-mar-058239+3 | |
ic 8253
Abstract: IC AN 8249 BPV11
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Original |
bpv1108-apr-05ic 8253ic an 8249 | |
BPV11Contextual Info: BPV11 Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
bpv11d-7402520-may-99 | |
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Contextual Info: BPV11F VlSfrlAY Vishay Telefunken Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-13A plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters X p ^ 900nm . |
OCR Scan |
bpv11f900nm20-may-99 | |
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Contextual Info: BPV11 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPV11 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ plastic package. Due to its waterclear epoxy lens the device is sensitive to visible and near infrared radiation. |
Original |
bpv11d-7402525-mar-04 | |
BPV11FContextual Info: BPV11F Silicon NPN Phototransistor Description BPV11F is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ plastic package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters l p 900nm . |
Original |
bpv11f900nmd-7402516-oct-96 | |