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R580
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Hamamatsu
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PHOTOMULTlPLlER TUBE |
Original |
PDF
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23.3KB
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2
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R5800
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Hamamatsu
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|
Original |
PDF
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25.67KB
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2
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R5800
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Hamamatsu Photonics
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Head-On Type Photomultiplier Tube |
Original |
PDF
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355.19KB
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5
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R580-01
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Hamamatsu
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Original |
PDF
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23.3KB
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2
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R580-080-000
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Hammond Manufacturing
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Box Accessories, Boxes, Enclosures, Racks, FLAT TOP PANEL 1PC EXTRUSION |
Original |
PDF
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5
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R580-100-000
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Hammond Manufacturing
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Box Accessories, Boxes, Enclosures, Racks, FLAT TOP PANEL 1PC EXTRUSION |
Original |
PDF
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5
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R580-130-000
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Hammond Manufacturing
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Box Accessories, Boxes, Enclosures, Racks, FLAT TOP PANEL 1PC EXTRUSION |
Original |
PDF
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5
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R580-15
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Hamamatsu
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|
Original |
PDF
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23.3KB
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2
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R580-16
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Hamamatsu
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|
Original |
PDF
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23.3KB
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2
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R580-17
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Hamamatsu
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|
Original |
PDF
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23.3KB
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2
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SR580
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AK Semiconductor
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Schottky Barrier Rectifiers in DO-27 package with reverse voltage ratings from 20 to 200 V, forward current up to 5 A, low forward voltage drop, high surge current capability, and lead-free construction compliant with EU RoHS directives. |
Original |
PDF
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CWS55R580AF
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Wuhan Xinyuan Semiconductor Co Ltd
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500V N-Channel Super Junction MOSFET CWS50R580A with 580 mOhm RDS(on) and 8A continuous drain current, available in TO-220, TO-220F, and TO-247 packages. |
Original |
PDF
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MBR580
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode in DO-201AD package, 5.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop, high surge current capability, suited for high frequency inverters and polarity protection applications. |
Original |
PDF
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SR580
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SUNMATE electronic Co., LTD
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Schottky barrier rectifier diode in DO-201AD package, 5.0A average rectified current, 20 to 100V peak repetitive reverse voltage range, low forward voltage, high surge current capability, suitable for high frequency inverters and polarity protection applications. |
Original |
PDF
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CWS50R580AF
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Wuhan Xinyuan Semiconductor Co Ltd
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500V N-Channel Super Junction MOSFET CWS50R580A with 580 mOhm RDS(on), 8A continuous drain current, available in TO-220, TO-220F, and TO-247 packages, suitable for high-efficiency power applications.500V N-Channel Super Junction MOSFET CWS50R580A with 580 mOhm RDS(on) and 8A continuous drain current, available in TO-220, TO-220F, and TO-247 packages. |
Original |
PDF
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SR580
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Microdiode Semiconductor (MDD)
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 80V V(RRM), Silicon, DO-201AD |
Original |
PDF
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CWS55R580ADR
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Wuhan Xinyuan Semiconductor Co Ltd
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500V N-Channel Super Junction MOSFET CWS50R580A with 580 mOhm RDS(on), 8A continuous drain current, available in TO-220, TO-220F, and TO-247 packages, suitable for high-efficiency power applications. |
Original |
PDF
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