NYTRONICS choke
Abstract: 2N5919 Nytronics 2N5919A 19145 inductor BOONTON 505-A Allen-Bradley resistors Allen-Bradley carbon resistor s4od all mica or american
Contextual Info: File No. 505 TOGBÆD RF P o w e r T ra n s is to rs Solid State Division 2N5919A 16-W , 4 0 0 -M H z , Silicon N -P -N E m itte r-B a lla s te d O v e rla y T ra n s is to r Im proved Versio n o f 2 N 5 9 1 9 Features O verdrive C a p a b ility of 20-W O u tp u t
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MRF660
Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040
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2n28762n31372n33752n3553+162n36322n37332n39242n39262n39272n3948mrf660mrf485ktc1969mrf150mpmrf4962sc2029bmrf648mrf646mrf429mpmrf648 data sheet
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rf power transistors
Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60
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2n5645mt-722n44402n5636+12mt-71n4040o-1172n5774o-1292n3733rf power transistorsto129sc26002n5646mt-72 package2n5924
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CM45-12A
Abstract: 8M0B5 MHW252 CM80-28R BGY41B BFR65 2N6166 blw95 BLY94 MHW1342
Contextual Info: RF Transistors for Broadcast Applications SGS-Thomson 55-108MHz Class C for FM Transmitters and Ctass AB for VHF-TV Band I Config. Package Type CE 2X.450SQ4LFL SD1476" CE 2X.450SQ4LFL SD1476 CE .5004LFL SD1457 CE .5004LFL SD1460 2X.450SQ4LFL CE SD1483 * In development, Class AB Icq = 2 X 400 mA
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55-108mhzsd1476450sq4lflsd1457+135004lflsd1460sd1483cm45-12a8m0b5mhw252cm80-28rbgy41bbfr652n6166blw95bly94mhw1342
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40664 SCR
Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Contextual Info: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.
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-500bcr316cr317cr322+11cr32340664 scrcd4001adican-6267scr 40430cd4014adrca 40669rca 17853siemens transistor manualcd2500e40555 scr
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2N6105
Abstract: TA7707 rca rf power transistor 30w IN1190 rca 381 transistor RCA Power Transistor 4 225 RCA-2N5918 RCA ta7707 2N6104 RCA 431 transistor
Contextual Info: File No. 504 RF Power Transistors Solid State Division 2N6104 2N6105 30-W 4 0 0 - MHz Broadband E m itte r-B a lla s te d Silicon N -P -N O verlay Transistors 2N 6105 J E D E C T O -2 1 6 A A Features: • ■ ■ ■ ■ 5-dB gain min. at 400 MHz with 30 watts (min.) output
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2n61042n6105400-mhzta7707+7rca rf power transistor 30win1190rca 381 transistorrca power transistor 4 225rca-2n5918rca ta7707rca 431 transistor
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N5017
Abstract: 2SD2350 CP405 1711-1602 2SD234r 2SD235Y BD116 bo113 description BD145 T062
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn110buy56-4buy56-6buy56-10+13buy72-4buy72-6buy72-102n50172sd2350cp4051711-16022sd234r2sd235ybd116bo113description bd145t062
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BD145
Abstract: 2SD2350 2SD234r 2SD235Y CP702 bo113 2N5017 BD112 BD116 CP401
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T
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npn110mht6904mht6905mht6906+15mht6907mht6908mht7511mht7512mht7513bd1452sd23502sd234r2sd235ycp702bo1132n5017bd112bd116cp401
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chn 834 TRANSISTOR
Abstract: High-Power 202A MOSFET CA3458T 40468A 3N128 equivalent ta7657 DIODE chn 548 TA7374 Thyristor chn 542 cd 40938
Contextual Info: RCA Solid State Total Data Service System The RCA Solid State DATABOOKS are supplemented throughout the year by a comprehensive data service system that keeps you aware of all new device announcements and lets you obtain as much or as little product information as
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-206acr208cr210cr212+16cr280cr301cr303cr304cr306cr311chn 834 transistorhigh-power 202a mosfetca3458t40468a3n128 equivalentta7657diode chn 548ta7374thyristor chn 542cd 40938
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1N5411
Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
Contextual Info: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal
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con-46o-10414-lead16-lead+1212-leado-220ab1n5411npn transistor rca 467cd4004tca3051cd4001d40468arca 4082240664 scrrca 405832n5756
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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