1N64 Search Results

1n645

Abstract: 1N649 1n646 1n648
Contextual Info: TYPES 1N645 THRU 1N649, 1N645A SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L -S 7 3 9 1 2 5 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 1 9 7 3 225 V to 600 V • 400 m A A V E R A G E • Rugged Double-Plug Construction m echa nica l d a ta

Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Ideal for automated placement SUPERECTIFIER • Low forward voltage drop • Low leakage current

1N649-1

Abstract: 1N649 JANTX
Contextual Info: FEATURES 1N649-1 • • • • • 1N649-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/240 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature:

1N648-1

Contextual Info: FEATURES 1N648-1 • • • • • 1N648-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current:

1N646-1

Abstract: marking blue
Contextual Info: FEATURES 1N646-1 • • • • • 1N646-1 SILICON RECTIFIER METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current A, sine 8.3mS: Total Power Dissipation: Operating Current:

1N6503

Abstract: 1N6499 JANTX 62034 "yellow led" 1.6mm 1n6505 JANTX1N6497 JANTX1N6502 1N6493 1N6497 1N6500
Contextual Info: 62034 1N649X Mii JAN QUALIFIED FAULT INDICATORS 1N650X OPTOELECTRONIC PRODUCTS DIVISION Features: Applications: • • • • • • • • • • • MIL-PRF-19500 Hermetically sealed Pin compatible with Dialight 547 and 555 series Available with Internal Current Regulation 5 to 30

Contextual Info: 1N6478 I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . thru 1N6484 SURFACE MOUNT, GLASS PASSIVATED 1.0 Amp SILICON RECTIFIER DIODE FEATURES: Plastic material has Underwriters Laboratory S G1 Flammability Classification 94 V -0 Low Leakage Glass Passivated Junction

Contextual Info: DIGITRON SEMICONDUCTORS 1N645-1N649 SILICON RECTFIER DIODES Available Non-RoHS standard or RoHS compliant (add PBF suffix) Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number MAXIMUM RATINGS

Contextual Info: Silicon Rectifier Diodes E 1N645-1 thru 1N649-1 Use Advantages DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

1N6468US

Abstract: MIL-S-19500 1N6467US tvs-diode 1N6461US 1N6462US 1N6463US 1N6464US 1N6465US 1N6466US
Contextual Info: 1N6461US THRU 1N6468US QPL 500 Watt Surface Mount TVS POWER DISCRETES Description Features The 1N64xx series of transient voltage suppressors are designed to protect military and commercial electronic equipment from overvoltages caused by lightning, ESD, EFT, inductive load switching, and EMP. These devices

1N6478

Abstract: 1N6484 DO-213AB JESD22-B102D J-STD-002B
Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability condition • Patented glass-plastic encapsulation technique • Ideal for automated placement • Low forward voltage drop

JTX 1N649-1

Abstract: DSAIH00025213 1n646
Contextual Info: Silicon Rectifier Diodes Use Advantages n 1N645-1 thru 1N649-1 DO-35 Glass Package Used as a general purpose rectifier in power supplies, or for clipping and steering applications. High performance alternative to small signal diodes where space does not permit use of power rectifiers.

BKC Semiconductors

Contextual Info: 500 Watt Void less TZS 1N6462 thru 1N6468 Applications Transient Zener Suppressors Overvoltage transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile environments in aerospace and military equipment applications where

BKC Semiconductors

Contextual Info: 1N6470 thru 1N6476 1500 Watt Voidless TZS Applications Transient Zener Suppressors Overvoltage transient voltage protection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the hostile environments in aerospace and military equipment applications where

1n6462

Abstract: DSAIH0002560
Contextual Info: 500 Watt Voidless TZS 1N6462 thru 1N6468 Applications Transient Zener Suppressors Overvoltage transient voltageprotection against static (ESD), power and lightening. The hard glass voidless construction is especially suited for the performance and a small footprint are important.

Contextual Info: 1N6478 thru 1N6484 Vishay General Semiconductor Surface Mount Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 1.0 A VRRM 50 V to 1000 V IFSM 30 A IR 10 µA VF 1.1 V Tj max. 175 °C d* e t n Pate *Glass-plastic encapsulation

diode 4483

Abstract: RZ2h marking E 1n diode marking 1n diode zener 4474 1N4471
Contextual Info: 1N4460 thru 1N4496 and 1N6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JANS* 1.5 WATT GLASS ZENER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C .

Contextual Info: 1N6462+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.5 @I(R) (A) (Test Condition)20m V(RWM) (V) Work.Pk.Rev.Voltage6 I(PPM) Max.(A)Pk.Pulse Current46

Contextual Info: 1N6475+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage44 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current24

Contextual Info: 1N6473+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage24 I(PPM) Max.(A)Pk.Pulse Current36.5

Contextual Info: 1N6473+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage27 @I(R) (A) (Test Condition)5m V(RWM) (V) Work.Pk.Rev.Voltage24 I(PPM) Max.(A)Pk.Pulse Current36.5

Contextual Info: 1N6472+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage16 @I(R) (A) (Test Condition)10m V(RWM) (V) Work.Pk.Rev.Voltage15 I(PPM) Max.(A)Pk.Pulse Current57

1N6459

Abstract: 1N6460
Contextual Info: Schottky PowerMod N6459 — 1N6460 Dim. Inches * & i u Baseplate Common Cathode 1/4-20UNC with Captive Lockwasher a i A B C D E F G Min. Max. -1.350 0.700 -3.140 -0.280 2.450 1.400 0.800 0.625 3.160 3.650 0.300 M illim eters Min. _ 34.29 17.78

1N4532

Abstract: 1n4631 IN643 1n662 jantx 1N3064 1N4151 1N4154 1N4534 1N643 1N662
Contextual Info: 1N643; JAN 1N643 1N662; JAN 1N662 1N663; JAN 1N663 COMPUTER DIODE Switching FEATU RES DESCRIPTION • M etallurgical Bond T h is device is particularly suited to a pp licatio ns where m ediu m speed sw itching is required. M oisture free stability is ensured through herm etic