RFP2N10 Search Results

Contextual Info: tyvvys S RFP2N08L, RFP2N10L S e m ico n d ucto r 7 2A, 80V and 100V, 1.05 Ohm, Logic Level, N-Channel Power MOSFETs juiy 1998 Features Description • 2A, 80V and 100V The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors

AN7254

Abstract: AN7260 RFP2N08L RFP2N10L TB334
Contextual Info: RFP2N08L, RFP2N10L Data Sheet July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in

RFL1N08L

Abstract: RFL1N10L RFP2N08L RFP2N10L
Contextual Info: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive

Contextual Info: interdi RFP2N08L, RFP2N10L D a ta S h e e t J u ly 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in

Contextual Info: RFP2N08, RFP2N10 HARRIS S E M I C O N D U C T O R 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as

2N10L

Abstract: 2N08L
Contextual Info: RFP2N08L RFP2N10L H a r r is August 1991 N-Channel Logic Level Power Field-Effect Transistors L2 FET Package Features • TO -22 0 A B TOP VIEW 2A, 8 0 V and 100V • rD S (0 N ) = 1 -0 5 n DRAIN (FLANGE) • Design O p tim ized for 5 V G ate Drives • Can b e D riven D irectly from Q M O S, N M O S, T T L C ircuits

AN7254

Abstract: AN7260 RFP2N08L RFP2N10L TB334 FAIRCHILD to220ab package
Contextual Info: RFP2N08L, RFP2N10L Data Sheet January 2002 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level 5V driving sources in

RFL1N08

Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
Contextual Info: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds

RFP2N10L

Abstract: AN7254 AN7260 RFP2N08L TB334
Contextual Info: RFP2N08L, RFP2N10L Data Sheet Title FP2 8L, P2 0L bt A, V d 0V, 50 m, gic vel, July 1999 2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically

AN7254

Abstract: AN7260 RFP2N08 RFP2N10 TB334 RFP2N010
Contextual Info: RFP2N08, RFP2N10 Semiconductor 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as

Contextual Info: m H a rris RFP2N08 RFP2N10 N-Channel Enhancement-Mode Power Field-Effect Transistors August 1991 Package Features TO-220AB • 2A , 8 0 V and 1 0 0V TOP VIEW • l'D S °n = 1 -0 5 0 • S O A is P o w er-D lssip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds

RFP2N06

Abstract: 1N10 RFL1N10 RFL1N08 RFP2N08 RFP2N10
Contextual Info: G E SOLID STATE Ôï i>i”|3fl7SDfll OOlflO'ï? b 3875081 G E S O L I D S T A T E Standard Power MOSFETs 01E 18097 D T -3 ? ~ RFL1N08, RFL1N10, RFP2N08, RFP2N10 * File Num ber N-Charinel Enhancement-Mode

transistor N342

Abstract: TC1-C RFL1N08L RFL1N10L TA9525 RFP2N08L RFP2N10L RFP mosfets
Contextual Info: 38 75081 =01 G E SOL ID S T A TE Logic-Level Power MOSFÉTs T e 1 3 ö 7 5 0 ö 1 0 0 1 0 4 2 4 t, 01E18424 D 'T ~ '~ ^ 7~ ' RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level

buz11

Abstract: BUZ31 THOMSON DISTRIBUTOR 58e d RFK30N12 THOMSON 58E THOMSON DISTRIBUTOR BUZ71 BUZ71A RFH12N RFK45N05
Contextual Info: THOnSON/ DISTRIBUTOR 5flE D • ^05^873 □□□57D3 5fl3 Wt TCSK P o w er M O S FE T s RF and B U Z -S e rie s P ow er M O S FE Ts — N -C h a n n e l Package Maximum Ratings BV q s S V id s (A) r DS(ON) OHMS 50 2 4 13 14 15 25 25 30 45 0.75 0.60 0.12

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL [ /Title HC55 17 /Subject (3 REN Ringing SLIC For ISDN Mode m/TA and WLL) /Autho r () /Keywords (Intersil Corporation, Telecom, SLICs, SLACs , Telephone, Telephony, WLL, Wireless Local

"Toggle Switch" spdt on/off

Abstract: ac voltmeter circuit diagrams AC voltmeter diagram AN9606 AN960-6
Contextual Info: TM Operation of the HC5517, HC55171 Evaluation Board HC5517EVAL, HC55171EVAL Application Note July 1997 AN9606.5 Features HC5517EVAL Board SLIC Controls • Thru-SLIC Ringing up to 44VRMS into 3 REN at 10% THD with a -80V Battery The design of the HC5517EVAL board incorporates three

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

diode a4W

Abstract: zener 4147 ringing tip ring pots telephone 90v 48v ZENER DIODE t2 Adjustable Power Supply Schematic Diagram 40vdc NTE cross TIP 34 pnp spdt 12v 150 OHM relay datasheet 5vdc, 150ma power relay a4w 41
Contextual Info: HC5517 Data Sheet July 1998 3 REN Ringing SLIC For ISDN Modem/TA and WLL File Number 4147.2 Features • Thru-SLIC Open Circuit Ringing Voltage up to 77VPEAK/54VRMS, 3 REN Capability at 44VRMS he HC5517 is a ringing SLIC designed to accommodate a wide variety of local loop applications. The various applications

AN9607

Abstract: HC5517 Adjustable Power Supply Schematic Diagram 40vdc
Contextual Info: NS ESIG D W TM R NE UCT D FO E PROD E D MEN ITUT 5186 COM SUBST 85, HC5 E R 551 NOT SSIBLE ,Data 1 HC Sheet 7 PO 1 5 HC5 3 REN Ringing SLIC For ISDN Modem/TA and WLL 4147.3 • Sinusoidal Ringing Capability • DI Process Provides Substrate Latch Up Immunity when

Contextual Info: HC5517 HARRIS S E M I C O N D U C T O R 3 REN Ringing SLIC For ISDN Modem/TA and WLL Ju ly 1998 Features Description • T hru-S L IC Open Circuit Ringing Voltage up to The HC 5517 is a ringing SLIC designed to accom m odate a w ide variety of local loop applications. The various applications

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

SPDT TOGGLE SWITCH

Abstract: R2527 28V DC supply ring generator 1N4744 15V 1W HC5517 HC55171 AC voltmeter connection diagram textool socket R31 RTD ca741
Contextual Info: Operation of the HC5517, HC55171 Evaluation Board HC5517EVAL, HC55171EVAL Application Note July 1997 AN9606.5 Features HC5517EVAL Board SLIC Controls • Thru-SLIC Ringing up to 44VRMS into 3 REN at 10% THD with a -80V Battery • Includes Transhybrid Circuit for Voice and Pulse