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AN7254 Abstract: AN7260 RFP2N08 RFP2N10 TB334 RFP2N010 Contextual Info: RFP2N08, RFP2N10 Semiconductor 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as	Original	rfp2n08 rfp2n10 ta09282 an7254 +3an7260 tb334 rfp2n010	PDF

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AN7254

Abstract: AN7260 RFP2N08 RFP2N10 TB334 RFP2N010
Contextual Info: RFP2N08, RFP2N10 Semiconductor 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2A, 80V and 100V • Linear Transfer Characteristics These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as

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rfp2n08 rfp2n10 ta09282 an7254 +3

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