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Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)
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st92f124/st92f150/st92f2508/16-bitj185014x14+1tqfp64
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vishay crcw0805
Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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d10lrcrcw0402d11lrcrcw0603+7d12lrcrcw0805d25lrcrcw1206crcw1210crcw1218vishay crcw0805
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CRCW0603LR
Abstract: CRCW1206-LR D.CRCW.LR
Contextual Info: D.CRCW.LR Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • SnPb contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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d10lrcrcw0402lrd11lrcrcw0603lr+4d12lrcrcw0805lrcrcw1206-lrd.crcw.lr
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: nb 358 d
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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st92f124/st92f150/st92f2508/16-bitj1850tqfp64+614x14pqfp10014x20tqfp100marking code n-channel mos field effect transistornb 358 d
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SMA0207-MK2
Abstract: NKS3 resistors CHP0603 RS68Y RN6015 RS58Y SFR25H RC41U 39 RC31U RCMS02
Contextual Info: Surface Mount Film Resistors Vishay FEATURES • Thick and thin film resistor chips • Metal film MELF resistors • CECC and MIL approved styles • Suitable for auto-Insertion equipment PRODUCT DESCRIPTION Thick Film Chip Resistors CECC approval available
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10-1md10/crcw04021-10md11/crcw0603+137k-10g300-50g500-200gsma0207-mk2nks3 resistorschp0603rs68yrn6015rs58ysfr25hrc41u 39rc31urcms02
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CRCW0603
Abstract: CRCW0805 CRCW1206 D11LR
Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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40401-802/eia-575d10lrcrcw0402d11lr+6crcw0603d12lrcrcw0805cecc4000029-apr-03crcw1206
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TEC201
Abstract: CORE F5A MARKING D55 mcl psc-2 dap 6 Marking R192 DAP 015 ST9 Compiler
Contextual Info: ST92124xxx-Auto/ST92150xxxxx-Auto/ ST92250xxxx-Auto 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256
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st92124xxx-auto/st92150xxxxx-auto/st92250xxxx-auto8/16-bitj1850+8tec201core f5amarking d55mcl psc-2dap 6marking r192dap 015st9 compiler
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: DAP7 CSTCR4M00G55A-R0 CTSR J1850 LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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st92f124/st92f150/st92f2508/16-bitj185014x14+1016-bitmarking code n-channel mos field effect transistordap7cstcr4m00g55a-r0ctsrlqfp100lqfp64pqfp100st92f150jdv1st92f250cv2
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RT-6
Abstract: 40401
Contextual Info: D.CRCW .—LR_ Vishay Thick Film, Rectangular, Low Value Resistors VISHAY ▼ FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • SnPb contacts on Ni barrier layer • Extremely low resistance values
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OCR Scan
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d10lrcrcw0402lrd11lrcrcw0603lr+4d12lrcrcw0805lrrt-640401
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PxC00
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR CORE F5A ST92F124V1QB f2f decoder ic Transistor 952 1075-1 lta8 f5b FERRITE bead f2f decoder ic speed F90 P02
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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st92f124/st92f150/st92f2508/16-bitj1850lqfp64+1514x14pqfp10014x20lqfp100st92f124r1t6pxc00marking code n-channel mos field effect transistorcore f5ast92f124v1qbf2f decoder ictransistor 952 1075-1lta8f5b ferrite beadf2f decoder ic speedf90 p02
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D10LR
Abstract: vishay crcw0805 d251206 CRCW0402
Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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40401-802/eia-575d10lrcrcw0402d11lr+8crcw0603d12lrcrcw0805d25lrcrcw1206crcw1210vishay crcw0805d251206
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D1004020
Abstract: EIA-575 CRCW2512 CRCW0402
Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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40401-802/eia-575d10lrcrcw0402d11lr+9crcw0603d12lrcrcw0805d25lrcrcw1206crcw1210d1004020eia-575crcw2512
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ST92150JDV1-Auto
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR F2D transistor CSTCR4M00G55A-R0 s a19 fmp J1850 LQFP100 LQFP64 PQFP100 D84 TRANSISTOR
Contextual Info: ST92124xxx-Auto/ST92150xxxxx-Auto ST92250xxxx-Auto 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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st92124xxx-auto/st92150xxxxx-autost92250xxxx-auto8/16-bitj1850+1114x1416-bitst92150jdv1-automarking code n-channel mos field effect transistorf2d transistorcstcr4m00g55a-r0s a19 fmplqfp100lqfp64pqfp100d84 transistor
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et D149 diode
Abstract: D44 MARKING
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E 3 TM (Emulated EEPROM)
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st92f124/st92f150/st92f2508/16-bitj1850tqfp64+614x14pqfp10014x20tqfp100et d149 dioded44 marking
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vishay CRCW0603
Abstract: 04 6332
Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values • Suitable for current sensors and shunts
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d10lrcrcw0402d11lrcrcw0603+8d12lrcrcw0805d25lrcrcw1206crcw1210crcw1218vishay crcw060304 6332
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Contextual Info: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM
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SMD Resistors, Arrays and Networks
Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Contextual Info: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0010-0611smd resistors, arrays and networksstr 20012wsk 013 070 eb+7potentiometer vishay draloric 61mini melf mma 0204-50a006 mosfetmicro melf "land patterntca 4401tuner uv 915 schematicminimelf resistors
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IFR 630 MF
Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
Contextual Info: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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st92f124xxst92f150cxxst92f150jdv1st92f250cv2+168/16-bitj185014x20lqfp10014x14pqfp100ifr 630 mf4-bit parity checker mark/space odd/evendap750 led flasher circuit with pdf formatf2f decoder ic2203fxck-p5.5v 1.0fbody marking mclcstcr4m00g55a-r0
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f2f decoder ic philips
Abstract: LOG TX2 1044 transistor marking D9 ic tda 1085 LTah basic stamp BS2 ic CSTCR4M00G55A-R0 stl motor control 64 lead ltbhr J1850
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD PRELIMINARY DATA • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)
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st92f124/st92f150/st92f2508/16-bitj185014x14+10tqfp64f2f decoder ic philipslog tx2 1044transistor marking d9ic tda 1085ltahbasic stamp bs2 iccstcr4m00g55a-r0stl motor control 64 leadltbhr
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IFR 630 MF
Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR AN1152 basic stamp BS2 china tv schematic diagram CSTCR4M00G55A-R0 DAP7 STIM 202 diode MARKING f54 PQFP100
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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st92f124/st92f150/st92f2508/16-bitj185014x14+1116-bitifr 630 mfmarking code n-channel mos field effect transistoran1152basic stamp bs2china tv schematic diagramcstcr4m00g55a-r0dap7stim 202diode marking f54pqfp100
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Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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st92f124/st92f150/st92f2508/16-bitj185014x14+116-bit
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Contextual Info: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM
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st92f124xx/st92f150cxx/st92f150jdv1/st92f250cv28/16-bitj1850 |
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MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Abstract: diode MARKING f54 stl motor control 64 lead
Contextual Info: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)
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st92f124/st92f150/st92f2508/16-bitj1850lqfp64+714x14pqfp10014x20lqfp100marking code n-channel mos field effect transistordiode marking f54stl motor control 64 lead
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Contextual Info: D.LR/CRCW Vishay Thick Film, Rectangular, Low Value Resistors FEATURES • Special metal glaze on high quality ceramic • Protective overglaze • Solder contacts on Ni barrier layer • Extremely low resistance values 0.1 Ω • Suitable for current sensors and shunts
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40401-802/eia-575d10ls08-apr-05 |
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