2N517 Search Results

2N5177

Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5177 Silicon NPN high power UHF transistor 2N5177 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:

2N5172

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5172 TO-92 Plastic Package E CB ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE UNITS

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

Contextual Info: Lead Mounted Transistors NPN Transistors/TO-92 Type Number 2N4124 2N5172 2N5088 PN2222A 2N3904 2N4401 MPSA05/ITTA05 MPSA06/ITTA06 2N5551 MPSA42 VCEO Volts 25 25 30 40 40 40 60 80 160 300 hpE @ V ce/Ic V/mA 120-360 100-750 350-1400 100-300 100-300 100-300 min. 50

2n5172

Abstract: 2N517
Contextual Info: SEMICONDUCTOR ¡m 2N5172 NPN General Purpose Amplifier T his device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 25 V Operating and storage junction temperature range

2N5172

Abstract: PN100
Contextual Info: 2N5172 E TO-92 CB NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

2N5172

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current A ICM : 0.5 Collector-base voltage

2N5178

Abstract: 40w electronic ballast 20W power transistor
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:

2N5179

Contextual Info: 2N5179 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5179 Availability Online Store

2n5179 motorola

Abstract: MMBR5179
Contextual Info: 1EE D I I MOTOROLA SC XSTRS/R T - 3 i- n F MOTOROLA S E M IC O N D U C T O R h h h b TECHNICAL DATA The RF Line MMBR5179 Die Source S am e as 2N5179 NPN Silicon High Frequency Transistor . . . designed for small-signal amplification at frequencies to 500 MHz. Specif­

marking 25b sot23

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72SM 0Cm 25b no Tb b MOTOROLA •l SEM ICONDUCTOR TECHNICAL DATA The RF Line MMBR5179L Die S ource S am e as 2N5179 NPN Silicon High Frequency Transistor . . . d e s ig n e d fo r sm a ll-sig n a l a m p lifica tio n at fre q u e n cie s to 500 M H z. S p e c if­

Contextual Info: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643

2N5172

Contextual Info: 2N5172 2N5172 TRANSISTOR NPN TO—92 FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 0.625 W (Tamb=25℃) 3. BASE Collector current ICM : 0.5 A Collector-base voltage V(BR)CBO : 25 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150℃

2N5179

Abstract: npn UHF transistor 2N5179 rf power amplifier transistor with s-parameters
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10

transistor 2n5172

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR AMPLIFIER TRANSISTOR 2N5172 TO-92 Plastic Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION

PN3563

Abstract: MPSH24 2N3663 2N5179 2N5770 2N918 BF199 MMBT5179 MMBT918 MPS5179
Contextual Info: _ _ - . tat B RF Amplifiers Devices V CE0{Sint h hFE @ Iq Vjj Volts) Min (mA) Max 2N3663 12 50 20 8.0 2N5179 12 50 25 3.0 NPH PNP Min mA • t.SD113G 0 0 3 ^ 5 2 0 ISA ■ NSCS NATL SEnlC0N]> (discrete) *T C#|, NF (dB) @ f (MHZ) Min PF Max Max 10 700

Contextual Info: 2N5177 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150

Contextual Info: 2N5178 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150

2N5179

Abstract: ic 741 datasheet pdf of 741 ic IC 741 MSC1305 transistor 2N5179 datasheet of ic 741 ic 741 equivalent uA 741 IC data sheet npn UHF transistor 2N5179
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, TO-72 packaged VHF/UHF Transistor • Low Noise, NF = 4.5 dB (max) @ 200 MHz • High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

NPN transistor 2n4400 beta value

Abstract: TP4058 NPN transistor 2n 3904 TP4059 transistor EBC 3904 TP4060 2N2712 to-92hs TP3644 2N2711 2N2924
Contextual Info: Econoline S P R AGUE GENERAL-PURPOSE SMALL-SIGNAL AMPLIFIERS PO LA RIT Y D-C C U R R E N T G AIN hFE Conditions Limits 2N2711 2N2712 2N2923 2N2924 2N2925 2N2926« 2N3392 2N3393 2N3394 2N3395Y 2N3396Y 2N3397? 2 N3398T 2N3721 2N5172 NPN NPN NPN NPN NPN NPN

2N3754

Abstract: 2N3753 2N3755 2N3756 2N3757 2N3758 2N3759 2N3760 2N3761 2N5171
Contextual Info: S ilicon C on trolled Rectifiers Cont. Discrete Devices Maxim um Trigger Characteristics Type V olts 'G T (mA) V gt (V) Surge Current (A) RM S On-State Current IT R M S (A) Package 2N5171 600 40 2.0 250 25 T 0 -4 8 D 2N3753 50 200 3.0 250 25 T 0 -4 8 D 2N3754

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as