2N5178 Search Results

2N5178 Datasheets (7)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N5178		Great American Electronics	Silicon NPN High Power UHF Transistor	Scan	PDF	28.76KB	1
2N5178		Great American Electronics	Silicon NPN high power UHF transistor	Scan	PDF	28.76KB	1
2N5178		Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	88.82KB	1
2N5178		Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	156.03KB	1
2N5178		Unknown	Transistor Replacements	Scan	PDF	89.77KB	1
2N5178		Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.25KB	1
2N5178		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	121.17KB	1

2N5178 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N5178 Abstract: 40w electronic ballast 20W power transistor Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:	OCR Scan	2n5178 fo-85 40w electronic ballast 20w power transistor	PDF
Contextual Info: 2N5178 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)55 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.150	Original	2n5178 freq200m	PDF
2N5178 Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N5178 Silicon NPN high power UHF transistor 2N5178 is designed for power amplifier, frequency multiplier or auto-oscillator applications in industrial equipment class C . Output Power: Frequency Range: Voltage: Package Type:	OCR Scan	2n5178 fo-85	PDF
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	mc2259 mc880p mc9713p mc2257 +61n4003 germanium diode specification 2n1256 s p 1n4465 mc9802p mc9718p 3n214	PDF
RCA SK CROSS-REFERENCE Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1 Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered	OCR Scan	rca sk cross-reference cd4003 2n2505 tf408 +61n4465 250pa120 2n3017 pt 3570 trw rf pa189 semicon volume 1	PDF
transistor c2060 Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,	OCR Scan	an-134 transistor c2060 transistor shortform datasheet & cross references 1n4465 +7c1906 transistor germanium itt 3n58 in939 mc1230f 2n3866 motorola c943 transistor	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF