BF461 Search Results

BF460

Abstract: BLY34 2n5213 2N3869 BLY33 motorola diode 2N3374 BF461 diode GG 14 G9090
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 20 OKS22 TS1134 KN100 2S01211 BF460 BF461 BF462 2N3374 ~~~~j: 25 30 2N3924 2S01228M 2S01228M 2N3118 2N3119 2SC259O 2N5421 2N3309 ~~~~:A 35 • 40 2N3684 2N3684 2N5213 2N5213 2N5213 2N3869 C3·28 BLY34 ~t~~:

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

BF759

Abstract: BF758 BF757 BD417 BD420 BF460 BF762 BF468 MOTOROLA BF761 BF787
Contextual Info: POWER TRANSISTORS — BIPOLAR PLASTIC continued TO-202AC Package CASE 306-04 PLASTIC STYLE 1: PIN 1. 2. 3. 4. EMITTER BASE COLLECTOR COLLECTOR R esistive Switching lcCont V c E O (sus) Am ps Max Volts Min 0.1 250 BF787 300 BF788 0.5 1 2 Device Type NPN ts

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IDT71T016

Abstract: SO44-2 BF461
Contextual Info: ADVANCE INFORMATION IDT71T016 LOW POWER 2V CMOS SRAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 Organization • Wide Operating Voltage Range: 1.8 to 2.7V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IDT71L024

Contextual Info: ADVANCE INFORMATION IDT71L024 LOW POWER 3V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

IOea10

Abstract: IDT71T024 BF461 BF 46
Contextual Info: ADVANCE INFORMATION IDT71T024 LOW POWER 2V CMOS SRAM 1 MEG 128K x 8-BIT Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

3771

Abstract: IDT71L016 SO44-2 Mark 3771 b3771
Contextual Info: ADVANCE INFORMATION IDT71L016 LOW POWER 3V CMOS SRAM 1 MEG 64K x 16-BIT Integrated Device Technology, Inc. FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C) temperature options

JW-66

Abstract: 6576 f1
Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C !3 A2EC !38 1 F8"#$%&9C !9E792D36453 8C''9A29!6 9E73D9%C6DC3 99 7C 39!6 9 2% F8"#$%&9EC !39*7592D364573 8C'9A29F6 9E73D9%C6DC3 99 7C 39F6 9)2% 1 '()*6+6'

Contextual Info: 電力用コンデンサ及び附属機器 低圧進相コンデンサ ニチコンの乾式低圧進相コンデンサは窒素ガスを充填しSF6ガスを全く使用しない新しいタイプのコンデンサで、地球環境に 優しく、また万一の事故時や火災発生時に出火や類焼の心配の少ない難燃性を特長とした防災形のコンデンサです。特に多く

ed9a

Abstract: woy transistor
Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Contextual Info: LOW POWER 3V CMOS SRAM 1 MEG 128Kx 8-BIT ADVANCE INFORMATION IDT71L024 Integrated Devise Technology, ]hc. FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

BF381

Abstract: MPSU45 BD419 MPSU95 transistor mpsu45 B0415 BF382 BF460 b0507 BF468 MOTOROLA
Contextual Info: M E D IU M PO W ER U N IW A TT T R A N S IS T O R S F o r a p p lic a tio n s re q u irin g h ig h e r p o w e r d is s ip a tio n th a n th a t o f th e sta n d a rd T O - 9 2 p a ck ag e, M o to r o la h a s 'd e v e lo p e d th e U n iw a tt case. In th is p la stic -e n c a p su la te d p ack ag e, w h ic h is slig h tly larger th a n the

STN66

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2C 3 A2EC 38 1 F8!"#$%9C 9E792D364538C&&9A29 69E73D9$C6DC399'7C39 69 2$ F8!"#$%9EC  $ 1 '( *6+6'

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

BF907

Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5

Contextual Info: 低圧進相コンデンサ JIS C 4901「低圧進相コンデンサ」 （2000年発行）の規格改正から受電設備用（kvar品） として使用する低圧進相コンデン サは、直列リアクトル（L＝6 %） を接続することが原則となり、直列リアクトル接続による電圧上昇及び設備容量を考慮して

Contextual Info: 低圧進相コンデンサ ニチコンの乾式低圧進相コンデンサは窒素ガスを充填しSF6ガスを全く使用しない新しいタイプのコンデンサで、地球環境に 優しく、また万一の事故時や火災発生時に出火や類焼の心配の少ない難燃性を特長とした防災形のコンデンサです。

Contextual Info: ADVANCE INFORMATION IDT71T016 L O W P O W E R 2V C M O S S R A M 1 M E G 64K X 16- BI T FEATURES: DESCRIPTION: • 6 4 K x 16 O rg a n iza tio n • W id e O p e ra tin g V o lta g e R a n g e: 1.8 to 2 .7 V • C o m m e rcia l (0° to 70°C ) an d In d u stria l (-40° to 85°C )

Contextual Info: LOW PO W E R 2V CM OS SRAM 1 MEG 128K X 8-BIT ADVANCE INFORMATION IDT71T024 FEATURES: DESCRIPTION: • 128K x 8 O rg a n iza tio n • W id e O p e ra tin g V o lta g e R ange: 1.8V to 2 .7 V • C o m m e rcia l (0° to 70°C ) an d In d u stria l (0° to 70°C )

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle