IXBH 40N160 Search Results

15N160

Abstract: 40N160 9N160 40N140
Contextual Info: BIMOSFET TM B-Series Contents 1999 IXYS All rights reserved VDSS IC cont VCE(sat) max TC = 25 °C TC = 25°C TO-247 Page V A V 1400 1600 9 7.0 IXBH 9N140 IXBH 9N160 C4 - 2 C4 - 2 1400 1600 15 7.0 IXBH 15N140 IXBH 15N140 C4 - 4 C4 - 4 1400 1600 20 6.5 IXBH 20N140

diode 1.5 ke 36 ca

Abstract: 40N160
Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Max mum Ratings 40N140 40N160 V CES

40N160

Abstract: 16N170
Contextual Info: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33

Contextual Info: High Voltage BIMOSFETTM IXBH 40N140 VCES IXBH 40N160 Monolithic Bipolar MOS Transistor N-Channel, Enhancement Mode = = = = IC25 VCE sat tfi 1400/1600 V 33 A 7V 35 ns TO-247 AD Preliminary data Symbol Test Conditions Maximum Ratings 40N140 40N160 VCES TJ = 25°C to 150°C

IXBH 40N160

Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings

Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400

40N140

Abstract: 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES IC25 VCE sat tfi N-Channel, Enhancement Mode C = = = = 1400/1600 V 33 A 6.2 V typ. 40 ns TO-247 AD G G C E C (TAB) E G = Gate, E = Emitter, Symbol Conditions Maximum Ratings

Contextual Info: High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode VCES ^C25 v¥ CE sat tfi 1400/1600 V 40 A 6V 140 ns Advanced data Symbol Test Conditions V CES V CGR Td = 25°C to 150°C 1400 1600 V ^ 1400 1600

Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 N-Channel, Enhancement Mode Test Conditions V CES Tj = 25°C to 150°C 1400 1600 V V CGR ^ 1400 1600 V = 25°C to 150°C; RGE = 1 M£i Continuous ±20 V V GEM Transient

st 247

Contextual Info: DIXYS Advanced Technical Information High Voltage BIMOSFET Monolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 1400/1600 V 33 A 7V 30 ns CES ^C25 v CE sat t N-Channel, Enhancement Mode TO-247 AD S ym b o l T est C o n d itio n s M axim um R atings

Contextual Info: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE sat = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

40N140

Abstract: 40N160
Contextual Info: IXBH 40N160 High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 33 A VCES = 1600 V VCE sat = 6.2 V typ. tfi = 40 ns N-Channel, Enhancement Mode C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

10C4

Abstract: 20N160
Contextual Info: imxYs I ~ BIM OSFET 0-Series _ Contents 1999 IX Y S All rights reserved v DSS ^C cont V CE(sat) max T c = 25 °C T c = 25°C V A V 1400 1600 9 1400 1600 TO-247 Page 7.0 IX BH 9N140 IXBH 9N160 C4-2 C4-2 15 7.0 IX B H 15N140 IX B H 15N140

50N60

Abstract: 50N100 50n80 40N160 9N160G 50N6
Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C

IXAN0014

Abstract: 0014 inverter circuit using MOSFET and micro controller mosfet 1500v difference between IGBT and MOSFET IN inverter IXBH9N160 ac to dc converter with chopper transformer mosfet 4b flyback converter 2A 15V gate drive pulse transformer Gate Drive Characteristics Requirements
Contextual Info: Technical Application IXAN0014 Comparative Performance of BIMOSFETs in Fly-Back Converter Circuits One of the typical applications for a flyback converter is the auxiliary power supply for the IGBT gate driver in an inverter. The essential requirement for a switch of a flyback converter in a drives inverter is a high breakdown voltage combined with fast

diode DSDI 9

Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B

40N140

Abstract: 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C

IXBH 40N160

Abstract: IXBJ 40N160 40N140 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

6N80

Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68

DSE 130 -06A

Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01

85C0

Abstract: IXSN35N100U1 SO 042
Contextual Info: Insulated Gate Bipolar Transistors IGBT "S" series with improved SCSOA capability Type V v CE(aat} c te8 max. typ- typ- ^auc max. PF Outlines on page 33 C = Collector, E Emitter, G = Gate, KE = Kelvin Emitter US K/W W 10 0.83 0.62 0.42 155 45 50 90 US 0.4

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18