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IXYS Corporation


IXYS Corporation IXGT16N170A IGBTs 32 Amps 1700 V 5 V Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGT16N170A		1,180			1 $26.28 10 $17.22 100 $17.22 1000 $17.22 10000 $17.22	Buy Now
TTI	IXGT16N170A	Tube			300	1 - 10 - 100 - 1000 $15.84 10000 $15.84	Buy Now
TME	IXGT16N170A				1	1 $23.88 10 $18.43 100 $14.63 1000 $13.93 10000 $13.93	Get Quote
IXYS Corporation IXGH16N170A IGBTs 32 Amps 1700 V 5 V Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH16N170A		899			1 $18.78 10 $11.68 100 $11.68 1000 $11.05 10000 $11.05	Buy Now
TTI	IXGH16N170A	Tube			30	1 - 10 - 100 $11.67 1000 $11.67 10000 $11.67	Buy Now
TME	IXGH16N170A				1	1 $11.80 10 $9.32 100 $8.37 1000 $8.37 10000 $8.37	Get Quote
IXYS Corporation IXBH16N170 IGBTs 1700V 25A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXBH16N170		317			1 $21.28 10 $16.05 100 $16.05 1000 $13.62 10000 $13.62	Buy Now
TTI	IXBH16N170	Tube			300	1 - 10 - 100 - 1000 $12.11 10000 $12.11	Buy Now
TME	IXBH16N170		250		1	1 $19.21 10 $14.97 100 $11.59 1000 $10.48 10000 $10.48	Buy Now
PUI	IXBH16N170		180	12 Weeks	1,020	1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXGH16N170 IGBTs 32 Amps 1700 V 3.5 V Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXGH16N170		241			1 $16.81 10 $10.30 100 $10.30 1000 $9.02 10000 $9.02	Buy Now
Newark	IXGH16N170	Bulk	529		1	1 $17.48 10 $15.64 100 $11.34 1000 $10.52 10000 $10.52	Buy Now
TTI	IXGH16N170	Tube			30	1 - 10 - 100 $10.30 1000 $10.30 10000 $10.30	Buy Now
Bristol Electronics	IXGH16N170		113			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	IXGH16N170		300		1	1 $13.92 10 $11.25 100 $9.19 1000 $8.85 10000 $8.85	Buy Now
IXYS Corporation IXYH16N170C IGBTs TO247 1700V 16A IGBT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXYH16N170C		61			1 $14.20 10 $9.54 100 $9.54 1000 $7.16 10000 $7.16	Buy Now
TTI	IXYH16N170C	Tube			300	1 - 10 - 100 - 1000 $7.34 10000 $7.34	Buy Now
TME	IXYH16N170C				1	1 $11.36 10 $9.02 100 $8.11 1000 $8.11 10000 $8.11	Get Quote

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16N170 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
752 J 1600 V CAPACITOR Abstract: 16N170 BiMOSFET Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	16n170 o-268 o-247 752 j 1600 v capacitor +1bimosfet	PDF
Contextual Info: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient	Original	16n170 o-268 o-247	PDF
Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16n170a 728b1	PDF
smd diode 819 Abstract: 16N170A mos 1200v to-247 Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20	Original	16n170a 728b1 123b1 065b1 +2smd diode 819 mos 1200v to-247	PDF
16N170A Abstract: TO-247 weight IXGH16N170A Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170A VCES IXGT 16N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30	Original	16n170a 728b1 to-247 weight ixgh16n170a	PDF
ixys ixgh 16n170 Abstract: S60A 16N170 DS98996 Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16n170 o-247 o-268 728b1 +3ixys ixgh 16n170 s60a ds98996	PDF
16N170AH1 Abstract: 16N170A robot control 16N170 Contextual Info: Advance Technical Data High Voltage IGBT IXGH/IXGT 16N170A VCES IXGH/IXGT 16N170AH1 IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 40 ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700	Original	16n170a 16n170ah1 o-247 405b2 +2robot control 16n170	PDF
16N170AH1 Abstract: 16N170A IXGT16N170A IXGH16N170AH1 Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a 16n170ah1 ixgt16n170a ixgh16n170ah1	PDF
16n170 Contextual Info: Advance Technical Data High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16n170 o-247 o-268 728b1 +2123b1 065b1	PDF
16N170A Abstract: diode 22 161 smd Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	16n170a diode 22 161 smd	PDF
ixys ixgh 16n170 Abstract: 16N170 IXGH 16N170 PF752 Contextual Info: IXGH 16N170 IXGT 16N170 High Voltage IGBT VCES IC25 VCE sat = 1700 = 32 = 3.5 V A V TO-268 (D3-Pak) (IXGT) Symbol Test Conditions VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25	Original	16n170 o-268 o-247 ixys ixgh 16n170 +2ixgh 16n170 pf752	PDF
752 C 1600 V CAPACITOR Abstract: 16N170 Contextual Info: High Voltage IGBT IXGH 16N170 VCES IXGT 16N170 IC25 VCE sat Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C	Original	16n170 o-268 o-247 752 c 1600 v capacitor	PDF
Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 16N170A IXBT 16N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1700 V VGES Continuous	Original	16n170a o-268 o-247	PDF
A1540 Abstract: rg 710 diode 16N170A ISOPLUS247 16N170AH1 IXGR16N170AH1 Contextual Info: Advance Technical Data IXGR 16N170AH1 High Voltage IGBT with Diode Electrically Isolated Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V	Original	16n170ah1 isoplus247 e153432 minute00 +5405b2 a1540 rg 710 diode 16n170a ixgr16n170ah1	PDF

ad 161 transistor Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170 IXBT 16N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 25 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	16n170 o-268 o-247 ad 161 transistor	PDF
Contextual Info: High Voltage IGBT IXGH 16N170A IXGT 16N170A IXGH 16N170AH1 IXGT 16N170AH1 VCES IC25 VCE sat tfi(typ) = 1700 V = 16 A = 5.0 V = 70 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a 16n170ah1 w1700	PDF
16N170 Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 16N170A IXBT 16N170A TM BIMOSFET Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1700 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ	Original	16n170a o-268 o-247 16n170	PDF
Contextual Info: High Voltage IGBT w/ Sonic Diode 16N170A 16N170A 16N170AH1 16N170AH1 VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 70ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	ixgt16n170a ixgh16n170a ixgt16n170ah1 ixgh16n170ah1 +1338b2	PDF
IXGH16N170A Abstract: IXGT16N170A Contextual Info: 16N170A 16N170A 16N170AH1 16N170AH1 High Voltage IGBT w/ Sonic Diode VCES IC90 VCE sat tfi(typ) = = £ = 1700V 11A 5.0V 35ns H1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1700 V VCGR TJ = 25C to 150C, RGE = 1M	Original	ixgt16n170a ixgh16n170a ixgt16n170ah1 ixgh16n170ah1 +216n170a dh10a-1800pa	PDF
50N60 Abstract: 50N100 50n80 40N160 9N160G 50N6 Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C	OCR Scan	9n140g 15n140 20n140 40n140 +89n160g 15n160 20n160 50n60 50n100 50n80 40n160 50n6	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	ms-013 10-pin 5m-1994 mo-229 +107n60b equivalent 18n50 equivalent ixgh 1499 mosfet smd 4407 ixdd 614 c 547 b w57 bjt transistor r1275ns20l r1271ns12c ixys cs 20-22 mof1 ixtp 220n04t2	PDF
40N160 Abstract: 16N170 Contextual Info: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33	Original	16n170a 16n170 42n170 40n160 +29n160 15n140	PDF

16N170 Search Results

16N170 Price and Stock

IXYS Corporation IXGT16N170A

IXYS Corporation IXGH16N170A

IXYS Corporation IXBH16N170

IXYS Corporation IXGH16N170

IXYS Corporation IXYH16N170C

16N170 Datasheets Context Search

752 J 1600 V CAPACITOR

smd diode 819

16N170A

ixys ixgh 16n170

16N170AH1

16N170AH1

16n170

16N170A

ixys ixgh 16n170

752 C 1600 V CAPACITOR

A1540

ad 161 transistor

16N170

IXGH16N170A

50N60

7N60B equivalent

40N160