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    42N170 Search Results

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    42N170 Price and Stock

    IXYS Corporation

    IXYS Corporation IXBT42N170

    IGBTs BIMOSFET 1700V 75A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXBT42N170 2,962
    • 1 $42.61
    • 10 $33.42
    • 100 $33.42
    • 1000 $31.89
    • 10000 $31.89
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    TTI IXBT42N170 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $31.61
    • 10000 $31.61
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    TME IXBT42N170 1
    • 1 $37.59
    • 10 $30.53
    • 100 $29.11
    • 1000 $29.11
    • 10000 $29.11
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    IXYS Corporation IXBH42N170A

    IGBTs BIMOSET 42A 1700V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXBH42N170A 285
    • 1 $45.29
    • 10 $38.63
    • 100 $38.63
    • 1000 $32.33
    • 10000 $32.33
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    TTI IXBH42N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.85
    • 10000 $29.85
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    TME IXBH42N170A 289 1
    • 1 $30.84
    • 10 $28.62
    • 100 $27.50
    • 1000 $27.50
    • 10000 $27.50
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    IXYS Corporation IXBH42N170

    IGBTs 1700V 75A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXBH42N170 130
    • 1 $37.27
    • 10 $27.21
    • 100 $27.21
    • 1000 $24.28
    • 10000 $24.28
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    TTI IXBH42N170 Tube 30
    • 1 -
    • 10 -
    • 100 $24.48
    • 1000 $24.48
    • 10000 $24.48
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    TME IXBH42N170 1
    • 1 $28.17
    • 10 $28.17
    • 100 $21.57
    • 1000 $20.81
    • 10000 $20.81
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    IXYS Corporation IXBR42N170

    IGBTs 57Amps 1700V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXBR42N170
    • 1 $35.66
    • 10 $29.10
    • 100 $29.10
    • 1000 $25.70
    • 10000 $25.70
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    IXYS Corporation IXBT42N170A

    IGBTs TO268 1700V 21A IGBT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXBT42N170A
    • 1 -
    • 10 -
    • 100 -
    • 1000 $36.23
    • 10000 $36.23
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    TTI IXBT42N170A Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $35.28
    • 10000 $35.28
    Buy Now
    TME IXBT42N170A 1
    • 1 $30.73
    • 10 $24.38
    • 100 $22.71
    • 1000 $22.71
    • 10000 $22.71
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    42N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C9014

    Abstract: 42N170 84ae
    Contextual Info: High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM VCES = 1700 V = 75 A IC25 VCE sat = 3.6 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V


    Original
    42n170c901484ae PDF

    42N170

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    42n170o-268o-247 PDF

    Contextual Info: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient


    Original
    42n170ao-268o-247728b1 PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original
    42n170o-247 PDF

    Contextual Info: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    42n170ao-268o-247728b1 PDF

    Contextual Info: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700 V = 75 A IC25 VCE sat = 3.3 V IXBH 42N170 IXBT 42N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original
    42n170o-268o-247 PDF

    Contextual Info: Advance Technical Information IXBN 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    42n170a728b1 PDF

    Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original
    42n170ao-268o-247728b1 PDF

    Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    42n170a728b1 PDF

    98933

    Abstract: E153432 IXBN42N170A
    Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original
    42n170a150ing728b198933+2e153432ixbn42n170a PDF

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Contextual Info: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan
    9n140g15n14020n14040n140+89n160g15n16020n16050n6050n10050n8040n16050n6 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    40N160

    Abstract: 16N170
    Contextual Info: BIMOSFET TM B-Series Contents VCES max. TO-247 TO-268 TO-268 long leg ISOPLUS i4-PACTM Page IXBF 9N140 C4-2 V IC25 TVJ = 25 °C A Vce(sat) TVJ = 25 °C V 1400 7 4.9 9 4.9 IXBH 9N140 C4-6 15 5.8 IXBH 15N140 C4-10 20 4.7 IXBH 20N140 C4-14 28 6.2 33 6.2 33


    Original
    16n170a16n17042n17040n160+29n16015n140 PDF