42N170A Search Results
42N170A Price and Stock
IXYS Corporation IXBH42N170AIGBTs BIMOSET 42A 1700V |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXBH42N170A | 285 |
|
Buy Now | |||||||
|
IXBH42N170A | Tube | 300 |
|
Buy Now | ||||||
|
IXBH42N170A | 289 | 1 |
|
Buy Now | ||||||
IXYS Corporation IXBT42N170AIGBTs TO268 1700V 21A IGBT |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXBT42N170A |
|
Get Quote | ||||||||
|
IXBT42N170A | Tube | 300 |
|
Buy Now | ||||||
|
IXBT42N170A | 1 |
|
Get Quote | |||||||
IXYS Corporation IXBN42N170AIGBTs 42 Amps 1700V 6.0 V Rds |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXBN42N170A |
|
Get Quote | ||||||||
|
IXBN42N170A | Tube | 300 |
|
Buy Now | ||||||
|
IXBN42N170A | 178 | 1 |
|
Buy Now | ||||||
|
IXBN42N170A | 4 | 1 |
|
Buy Now | ||||||
Littelfuse Inc IXBT42N170ADisc Igbt Bimosfet-High Volt To-268Aa/ T; |Littelfuse IXBT42N170A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXBT42N170A | Bulk | 300 |
|
Buy Now | ||||||
|
IXBT42N170A | Bulk | 8 Weeks | 30 |
|
Get Quote | |||||
Littelfuse Inc IXBN42N170ADiscigbtbimosfet-Hivolt Sot-227B(Mini)/; |Littelfuse IXBN42N170A |
|||||||||||
| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IXBN42N170A | Bulk | 300 |
|
Buy Now | ||||||
|
IXBN42N170A | Bulk | 8 Weeks | 10 |
|
Get Quote | |||||
|
IXBN42N170A | 70 |
|
Get Quote | |||||||
42N170A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: Advance Technical Information IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient |
Original |
42n170ao-268o-247728b1 | |
|
Contextual Info: Advance Technical Information VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous |
Original |
42n170ao-268o-247728b1 | |
|
Contextual Info: Advance Technical Information IXBN 42N170A BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
Original |
42n170a728b1 | |
|
Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor VCES IC25 VCE sat tfi IXBH 42N170A IXBT 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous |
Original |
42n170ao-268o-247728b1 | |
|
Contextual Info: Advance Technical Information BIMOSFETTM Monolithic Bipolar MOS Transistor IXBN 42N170A Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 |
Original |
42n170a728b1 | |
98933
Abstract: E153432 IXBN42N170A
|
Original |
42n170a150ing728b198933+2 | |
50N60
Abstract: 50N100 50n80 40N160 9N160G 50N6
|
OCR Scan |
9n140g15n14020n14040n140+8 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
|
Original |
ms-01310-pin5m-1994mo-229+10 |