BIMOSFET Search Results
BIMOSFET Price and Stock
IXYS Corporation IXBH16N170AIGBTs 1700V 16A |
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IXBH16N170A | Tube | 400 | 10 |
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IXYS Corporation IXBH9N160GIGBTs 9 Amps 1600V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBH9N160G | Tube | 30 |
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IXYS Corporation MMIX4B22N300IGBTs SMPDB 3KV 22A IGBT |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MMIX4B22N300 | Tube | 300 |
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IXYS Corporation IXBH6N170IGBTs 12 Amps 1700V 3.6 Rds |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBH6N170 | Tube | 300 |
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IXYS Corporation IXBT6N170IGBTs 12 Amps 1700V 3.6 Rds |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBT6N170 | Tube | 300 |
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Buy Now | ||||||
BIMOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
10N170
Abstract: BiMOSFET
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Original |
10n170728b1123b1065b1+1 | |
752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
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16n170o-268o-247752 j 1600 v capacitor+1 | |
IXBL64N250Contextual Info: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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ixbl64n250ic11064n2505-10-a | |
IXBF20N300Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C |
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ixbf20n30020n3001-23-09-a | |
IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
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ixbk64n250ixbx64n250ic110o-264+4 | |
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Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400 |
OCR Scan |
40n14040n160o-247d-68623 | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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ixbf15n300cic11015n300c | |
g4 pc 50 w
Abstract: G2 - 395
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mmix4b12n30012n3001-23-09-ag4 pc 50 w+1 | |
IXBK55N300
Abstract: IXBX 55N300 IXBX55N300
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ixbk55n300ixbx55n300ic110o-264+3 | |
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Contextual Info: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES |
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9n160go-2479-140/160g | |
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Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR |
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ic110ixbh20n300ixbt20n300o-247+1 | |
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Contextual Info: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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ixbt20n300hvic110o-26820n300 | |
C9014
Abstract: 42N170 84ae
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42n170c901484ae | |
IXBH16N170
Abstract: 16N170 IXBT16N170
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ixbh16n170ixbt16n170o-24716n170 | |
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25N250
Abstract: IXBX25N250
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ixbx25n250plus247tm25n250 | |
MMIX4B20N300Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings |
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mmix4b20n300ic1106-05-12-b | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH10N300 VCES = 3000V IC110 = 10A VCE sat 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M |
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ixbh10n300ic110o-247100ms+1 | |
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Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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ixbf20n300ic11050/60hz20n300+1 | |
42N170Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
Original |
42n170o-268o-247 | |
IXBF12N300Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
ixbf12n300ic11050/60hz12n300+1 | |
smd diode 819
Abstract: 16N170A mos 1200v to-247
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Original |
16n170a728b1123b1065b1+2 | |
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Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C |
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9n1609-140/160g | |
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Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 |
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ixbh6n170ixbt6n170o-2476n170 | |
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Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor Extended FBSOA VCES = 2500V IC110 = 36A VCE sat ≤ 3.3V IXCH36N250 IXCK36N250 TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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ic110ixch36n250ixck36n250o-247+2 | |