BIMOSFET Search Results
BIMOSFET Price and Stock
Littelfuse Inc IXBK55N300 (BIMOSFET SERIES)Igbt, 3Kv, 130A, 150Deg C, 625W; Continuous Collector Current:130A; Collector Emitter Saturation Voltage:2.7V; Power Dissipation:625W; Collector Emitter Voltage Max:3Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Littelfuse IXBK55N300 |
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IXBK55N300 (BIMOSFET SERIES) | Bulk | 785 | 1 |
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Littelfuse Inc IXBT42N300HV (BIMOSFET SERIES)Igbt, Single, 3Kv, 104A, To-268Hv; Continuous Collector Current:104A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:500W; Collector Emitter Voltage Max:3Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Littelfuse IXBT42N300HV |
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IXBT42N300HV (BIMOSFET SERIES) | Bulk | 542 | 1 |
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Littelfuse Inc IXBH16N170 (BIMOSFET SERIES)Igbt, Single, 1.7Kv, 40A, To-247; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:3.3V; Power Dissipation:250W; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Littelfuse IXBH16N170 |
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IXBH16N170 (BIMOSFET SERIES) | Bulk | 498 | 1 |
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Littelfuse Inc IXBX50N360HV (BIMOSFET SERIES)Igbt, Single, 3.6Kv, 125A, To-247Plus-Hv; Continuous Collector Current:125A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:660W; Collector Emitter Voltage Max:3.6Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBX50N360HV |
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IXBX50N360HV (BIMOSFET SERIES) | Bulk | 407 | 1 |
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Littelfuse Inc IXBH16N170A (BIMOSFET SERIES)Igbt, Single, 1.7Kv, 16A, To-247Ad; Continuous Collector Current:16A; Collector Emitter Saturation Voltage:6V; Power Dissipation:150W; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C; Msl:- Rohs Compliant: Yes |Littelfuse IXBH16N170A |
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IXBH16N170A (BIMOSFET SERIES) | Bulk | 391 | 1 |
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BIMOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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10N170
Abstract: BiMOSFET
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10N170 728B1 123B1 728B1 065B1 10N170 BiMOSFET | |
752 J 1600 V CAPACITOR
Abstract: 16N170 BiMOSFET
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16N170 O-268 O-247 752 J 1600 V CAPACITOR 16N170 BiMOSFET | |
IXBL64N250Contextual Info: Advance Technical Information High Voltage, High Gain BiMOSFETTM IXBL64N250 VCES IC110 = 2500V = 46A ≤ 3.0V VCE sat Monolithic Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBL64N250 IC110 64N250 5-10-A IXBL64N250 | |
IXBF20N300Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C |
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IXBF20N300 20N300 1-23-09-A IXBF20N300 | |
IXBX64N250
Abstract: IC100 IXBK64N250 PLUS247
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IXBK64N250 IXBX64N250 IC110 O-264 IC100 64N250 5-10-A IXBX64N250 IC100 IXBK64N250 PLUS247 | |
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Contextual Info: □IXYS High Voltage BIMOSFET M onolithic Bipolar MOS Transistor IXBH 40N140 IXBH 40N160 VCES ^C25 VCE sat tfi N-Channel, Enhancement Mode TO-247 AD Symbol Test Conditions VCES Tj = 25°C to 150°C 1400 1600 V VCGR Tj = 25°C to 150°C; RGE = 1 MQ 1400 |
OCR Scan |
40N140 40N160 O-247 40N160 D-68623 | |
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Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF15N300C IC110 15N300C | |
g4 pc 50 w
Abstract: G2 - 395
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MMIX4B12N300 12N300 1-23-09-A g4 pc 50 w G2 - 395 | |
IXBK55N300
Abstract: IXBX 55N300 IXBX55N300
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IXBK55N300 IXBX55N300 IC110 O-264 IC110 PLUS247 100ms IXBX 55N300 IXBX55N300 | |
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Contextual Info: IXBH 9N160G High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IC25 = 9A VCES = 1600 V VCE sat = 4.9 V typ. tfi = 70 ns N-Channel, Enhancement Mode MOSFET compatible C TO-247 AD G C E G C (TAB) E G = Gate, E = Emitter, Conditions Maximum Ratings VCES |
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9N160G O-247 9-140/160G | |
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Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V IXBH20N300 IXBT20N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR |
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IC110 IXBH20N300 IXBT20N300 O-247 20N300 | |
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Contextual Info: Advance Technical Information IXBT20N300HV High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 20A VCE sat ≤ 3.2V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXBT20N300HV IC110 O-268 20N300 | |
C9014
Abstract: 42N170 84ae
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42N170 C9014 42N170 84ae | |
IXBH16N170
Abstract: 16N170 IXBT16N170
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IXBH16N170 IXBT16N170 O-247 16N170 IXBH16N170 IXBT16N170 | |
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25N250
Abstract: IXBX25N250
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IXBX25N250 PLUS247TM 25N250 IXBX25N250 | |
MMIX4B20N300Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor MMIX4B20N300 C2 C1 G1 G2 E2C4 E1C3 Electrically Isolated Tab VCES = 3000V IC110 = 14A VCE(sat) ≤ 3.2V G4 G3 C2 E3E4 Symbol Test Conditions G2 E2C4 Maximum Ratings |
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MMIX4B20N300 IC110 IC110 MMIX4B20N300 6-05-12-B | |
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Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH10N300 VCES = 3000V IC110 = 10A VCE sat 3.2V TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M |
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IXBH10N300 IC110 O-247 100ms 10N300 | |
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Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXBF20N300 IC110 IC110 50/60Hz, 20N300 6-05-12-B | |
42N170Contextual Info: Advanced Technical Information High Voltage, High Gain IXBH 42N170 IXBT 42N170 TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 75 A VCE sat = 3.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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42N170 42N170 O-268 O-247 | |
IXBF12N300Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
Original |
IXBF12N300 IC110 IC110 50/60Hz, 12N300 6-07-12-B IXBF12N300 | |
smd diode 819
Abstract: 16N170A mos 1200v to-247
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16N170A 728B1 123B1 728B1 065B1 smd diode 819 16N170A mos 1200v to-247 | |
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Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C |
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9N160 9-140/160G | |
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Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 6A VCE sat ≤ 3.4V IXBH6N170 IXBT6N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 |
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IXBH6N170 IXBT6N170 O-247 6N170 | |
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Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor Extended FBSOA VCES = 2500V IC110 = 36A VCE sat ≤ 3.3V IXCH36N250 IXCK36N250 TO-247 AD Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IC110 IXCH36N250 IXCK36N250 O-247 O-264 100ms | |