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    IXBT16N170 Search Results

    IXBT16N170 Datasheets (4)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXBT16N170
    		IXYS 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor Original PDF 49.89KB 2
    IXBT 16N170A
    		IXYS TRANS IGBT CHIP N-CH 1700V 16A 3TO-268 Original PDF 543.4KB 2
    IXBT16N170A
    		IXYS 1700V high voltage, high gain BIMOSFET monolithic bipolar MOS transistor Original PDF 51.65KB 2
    IXBT16N170AHV
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT Original PDF 169.55KB
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    IXBT16N170 Price and Stock

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    IXYS Corporation IXBT16N170A

    IGBT 1700V 16A TO-268AA
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    DigiKey IXBT16N170A Tube 1
    • 1 $26.37
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    Mouser Electronics IXBT16N170A 239
    • 1 $26.92
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    Verical IXBT16N170A 8 4
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    TTI IXBT16N170A Tube 300
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    TME IXBT16N170A 8 1
    • 1 $14.47
    • 10 $11.41
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    IBS Electronics IXBT16N170A 300
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    IXYS Corporation IXBT16N170AHV

    IGBT 1700V 16A TO-268HV
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    DigiKey IXBT16N170AHV Tube 300
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    Verical IXBT16N170AHV 18 4
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    TTI IXBT16N170AHV Tube 300
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    TME IXBT16N170AHV 18 1
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    Littelfuse Inc IXBT16N170A

    Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT16N170A
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    Newark IXBT16N170A Bulk 300
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    RS IXBT16N170A Bulk 8 Weeks 30
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    Littelfuse Inc IXBT16N170AHV

    Disc Igbt Bimosfet-High Volt To-268Aa/ Tube |Littelfuse IXBT16N170AHV
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    Newark IXBT16N170AHV Bulk 300
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    RS IXBT16N170AHV Bulk 8 Weeks 30
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    IXBT16N170 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXBH16N170

    Abstract: 16N170 IXBT16N170
    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH16N170 IXBT16N170 VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBH16N170 IXBT16N170 O-247 16N170 IXBH16N170 IXBT16N170 PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 16A VCE sat ≤ 3.3V IXBH16N170 IXBT16N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBH16N170 IXBT16N170 O-247 16N170 PDF

    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA16N170AHV IXBT16N170AHV VCES = 1700V IC25 = 16A VCE sat  6.0V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700


    Original     		IXBA16N170AHV IXBT16N170AHV O-263HV 338B2 PDF