10N170 Search Results
10N170 Price and Stock
Littelfuse Inc IXYH10N170CV1Transistor, Igbt, 1.7Kv, 36A, To-247Ad; Continuous Collector Current:36A; Collector Emitter Saturation Voltage:3.6V; Power Dissipation:280W; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXYH10N170CV1 | Bulk | 291 | 1 |
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IXYH10N170CV1 | Bulk | 8 Weeks | 30 |
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Littelfuse Inc IXBH10N170Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:140W; Collector Emitter Voltage Max:1.7Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBH10N170 | Bulk | 272 | 1 |
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IXBH10N170 | Bulk | 8 Weeks | 30 |
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Littelfuse Inc IXBT10N170Disc Igbt Bimosfet-High Volt To-268Aa/ T; |Littelfuse IXBT10N170 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXBT10N170 | Bulk | 300 |
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IXBT10N170 | Bulk | 8 Weeks | 30 |
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Littelfuse Inc IXGT10N170Disc Igbt Npt-Hi Voltage To-268Aa/ Tube; |Littelfuse IXGT10N170 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXGT10N170 | Bulk | 300 |
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IXGT10N170 | Bulk | 8 Weeks | 30 |
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Littelfuse Inc IXGH10N170Disc Igbt Npt-Hi Voltage To-247Ad/ Tube; |Littelfuse IXGH10N170 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IXGH10N170 | Bulk | 300 |
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Buy Now | ||||||
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IXGH10N170 | Bulk | 8 Weeks | 30 |
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10N170 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
10N170
Abstract: BiMOSFET
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10n170728b1123b1065b1+1 | |
10N170Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V |
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10n170o-247o-268728b1 | |
ge motor 752
Abstract: 10N170A 1 0 9 R
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10n170a728b1123b1065b1+2 | |
10N170AContextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 |
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10n170a728b1 | |
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Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 |
Original |
10n170a728b1 | |
10N170Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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10n170o-268o-247728b1+2 | |
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Contextual Info: IXGH 10N170A VCES IXGT 10N170A IC25 VCE sat tfi(typ) High Voltage IGBT Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 |
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10n170a728b1123b1065b1 | |
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Contextual Info: High Voltage, High Gain TM BIMOSFET Monolithic Bipolar MOS Transistor VCES = 1700 V IC25 = 20 A VCE sat = 3.8 V IXBH 10N170 IXBT 10N170 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ |
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10n170728b1123b1065b1 | |
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Contextual Info: Advance Technical Data High Voltage IGBT IXGH 10N170 VCES IXGT 10N170 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V |
Original |
10n170o-247o-268728b1 | |
50N60
Abstract: 50N100 50n80 40N160 9N160G 50N6
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OCR Scan |
9n140g15n14020n14040n140+8 | |
7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
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ms-01310-pin5m-1994mo-229+10 |