IXBF20N300 Search Results

IXBF20N300 Datasheets (1)

Filter by Manufacturer

IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXBF20N300		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 34A 150W ISOPLUSI4	Original	PDF		5

IXBF20N300 Price and Stock

Filter by Manufacturer

Select Manufacturer


Littelfuse Inc IXBF20N300 Disc IGBT BiMSFT-VeryHiVolt I4-PAK ISO+
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IXBF20N300	Bulk		8 Weeks	300	1 - 10 - 100 - 1000 $101.12 10000 $101.12	Get Quote
IXYS Corporation IXBF20N300 Transistor: IGBT; BiMOSFET™; 3kV; 34A; 150W; ISOPLUS i4-pac™ x024c
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXBF20N300				1	1 $64.28 10 $54.87 100 $54.87 1000 $54.87 10000 $54.87	Get Quote

IXBF20N300 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IXBF20N300 Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	ixbf20n300 20n300 1-23-09-a	PDF
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ixbf20n300 ic110 50/60hz 20n300 +16-05-12-b	PDF
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V IXBF20N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	ic110 ixbf20n300 20n300 6-05-12-b	PDF
IXBF20N300 Abstract: 20N300 20N30 ic901 TF550 b20n300 S 2230 Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	ixbf20n300 20n300 20n30 ic901 +3tf550 b20n300 s 2230	PDF
IXGF30N400 Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250 Contextual Info: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers	Original	o-264 ixbx55n300 plus247 ixbf55n300 +12o-268 o-247 ixgf30n400 ixgf4n400 ixgf25n250 pulser isoplus ixgf54n400 discrete igbts ixth1n250 ixbx64n250 ixgt25n250	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
IXBK55N300 Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250 Contextual Info: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking	Original	e153432 com/ixan0022 ixbk55n300 ixbf55n300 +8ixbh32n300 bimosfet radar system with circuit diagram ixbh20n300 ixbh12n300 bimos high speed bridge rectifier ixbh2n250	PDF